I-AdvancedIsikhephe seSiC CantileverUkulungiswa kweWafer okwenziwe yi-vet-china kubonelela ngesisombululo esigqibeleleyo sokwenza i-semiconductor. Le paddle ye-cantilever yenziwe ngezinto ze-SiC (silicon carbide), kwaye ubunzima bayo obuphezulu kunye nokumelana nobushushu kwenza ukuba ikwazi ukugcina ukusebenza kakuhle kwiindawo ezinobushushu obuphezulu kunye neendawo ezirhabaxa. Uyilo lweCantilever Paddle luvumela i-wafer ukuba ixhaswe ngokuthembekileyo ngexesha lokucubungula, okunciphisa umngcipheko wokuqhekeka kunye nomonakalo.
Isikhephe seSiC Cantileverlicandelo elikhethekileyo elisetyenziswa kwizixhobo zokwenza i-semiconductor ezifana ne-oxidation furnace, i-diffusion furnace, kunye ne-annealing furnace, eyona nto isetyenziswa kakhulu kukulayisha nokukhupha i-wafer, ukuxhasa nokuthutha ii-wafers ngexesha leenkqubo zobushushu obuphezulu.
Izakhiwo ezifanayoyeI-SiCci-antiliverpi-addle: isakhiwo se-cantilever, esiqinileyo kwelinye icala kwaye sikhululekile kwelinye, sidla ngokuba noyilo oluthe tyaba nolufana nesikhephe.
I-VET Energy isebenzisa izixhobo ze-silicon carbide ezicocekileyo kakhulu ukuqinisekisa umgangatho.
| Iimpawu ezibonakalayo zeSilicon Carbide ephinde yasetyenziswa | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (eneoksijini), 1700°C (indawo enciphisa umoya) |
| Umxholo weSiC | > 99.96% |
| Umxholo wasimahla we-Si | < 0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g/cm3 |
| Ukuvuleka okubonakalayo | < 16% |
| Amandla oxinzelelo | > 600I-MPa |
| Amandla okugoba abandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kobushushu @1500°C | 4.70 10-6/°C |
| Ukuqhuba kobushushu @1200°C | 23W/m•K |
| Imodulus ethambileyo | 240 GPa |
| Ukumelana noxinzelelo olushushu | Kuhle kakhulu |
Iingenelo ze-VET Energy's Advanced SiC Cantilever Paddle for Wafer Processing zezi:
-Uzinzo lobushushu oluphezulu: lusetyenziswa kwiindawo ezingaphaya kwe-1600°C;
-I-coefficient yokwandiswa kobushushu obuphantsi: igcina uzinzo olunobukhulu, inciphisa umngcipheko we-wafer warpage;
-Ubunyulu obuphezulu: umngcipheko ophantsi wokungcoliswa kwesinyithi;
-Ukungangeni kweekhemikhali: ayimelani nokugqwala, ifanelekile kwiindawo ezahlukeneyo zegesi;
-Ukuqina okuphezulu kunye nobunzima: Ayigugi, ubomi benkonzo ende;
-Ukuqhuba kakuhle kobushushu: kunceda ekufudumaleni kwe-wafer efanayo.
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