I-AdvancedISiC Cantilever Paddlekwi-Wafer Processing eyenziwe yi-vet-china ibonelela ngesisombululo esihle kakhulu sokwenziwa kwe-semiconductor. Le paddle cantilever yenziwe ngezinto zeSiC (silicon carbide), kunye nokuqina kwayo okuphezulu kunye nokumelana nobushushu kuyenza ikwazi ukugcina ukusebenza okugqwesileyo kubushushu obuphezulu kunye neendawo ezinobungozi. Uyilo lweCantilever Paddle luvumela i-wafer ukuba ixhaswe ngokuthembekileyo ngexesha lokucubungula, ukunciphisa umngcipheko wokuqhekeka kunye nomonakalo.
ISiC Cantilever Paddlelicandelo elikhethekileyo elisetyenziswa kwizixhobo zokuvelisa i-semiconductor ezifana ne-oxidation furnace, i-diffusion furnace, kunye nesithando somlilo, eyona nto isetyenziswayo kukulayishwa kwe-wafer kunye nokukhulula, ukuxhasa kunye nokuthutha ama-wafers ngexesha leenkqubo zokushisa okuphezulu.
Izakhiwo eziqhelekileyoyeSiCcantileverpukongeza: isakhiwo se-cantilever, esisisigxina kwelinye icala kwaye sikhululekile kwelinye, ngokuqhelekileyo sinoyilo olucaba kunye ne-paddle-like.
Amandla e-VET asebenzisa ukucoceka okuphezulu kwakhona kwe-silicon carbide izinto zokuqinisekisa umgangatho.
| Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
| Umxholo weSiC | > 99.96% |
| Isiqulatho sasimahla Si | < 0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla oxinzelelo | > 600MPa |
| Amandla okugoba okubandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23W/m•K |
| Imodyuli ye-elastic | 240 GPA |
| Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |
Izinto eziluncedo zeVET Energy's Advanced SiC Cantilever Paddle for Wafer Processing zezi:
-Ukuzinza okuphezulu kweqondo lokushisa: kusetyenziswe kwiindawo ezingaphezulu kwe-1600 ° C;
-I-coefficient yokwandisa i-thermal ephantsi: igcina uzinzo lwe-dimensional, ukunciphisa umngcipheko we-wafer warpage;
-Ukucoceka okuphezulu: umngcipheko ophantsi wokungcoliswa kwesinyithi;
-I-inertness ye-Chemical: i-corrosion-resistant, ilungele iindawo ezahlukeneyo zegesi;
-Amandla aphezulu kunye nobunzima: Ukunganxibi, ubomi benkonzo ende;
-Ukuqhuba kakuhle kwe-thermal: inceda ekufudumezeni okufanayo kwe-wafer.
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