Ikristale enye yeSiC yi-semiconductor material yeQela IV-IV eyenziwe ngezinto ezimbini, iSi kunye neC, kwi-stoichiometric ratio ye-1:1. Ubulukhuni bayo bulandela idayimani kuphela.
Indlela yokunciphisa ikhabhoni ye-silicon oxide ukulungiselela i-SiC isekelwe kakhulu kule fomyula ilandelayo yempendulo yamakhemikhali:
Inkqubo yokusabela ekunciphiseni ikhabhoni ye-silicon oxide iyinkimbinkimbi, apho ubushushu bokusabela buchaphazela ngokuthe ngqo imveliso yokugqibela.
Kwinkqubo yokulungiselela i-silicon carbide, izinto ezikrwada zifakwa kuqala kwi-resistance furnace. I-resistance furnace ineendonga zokugqibela kuzo zombini iziphelo, kunye ne-graphite electrode embindini, kwaye i-furnace core idibanisa ii-electrode ezimbini. Kumda we-furnace core, izinto ezikrwada ezithatha inxaxheba kwi-reaction zifakwa kuqala, kwaye emva koko izinto ezisetyenziselwa ukugcina ubushushu zifakwa kumda. Xa ukunyibilikisa kuqala, i-resistance furnace iyanikwa amandla kwaye ubushushu bunyuka bube yi-2,600 ukuya kwi-2,700 degrees Celsius. Amandla obushushu bombane adluliselwa kwi-charge ngokusebenzisa umphezulu we-furnace core, nto leyo ebangela ukuba ifudumale kancinci kancinci. Xa ubushushu be-charge budlula kwi-1450 degrees Celsius, kwenzeka i-chemical reaction ukuze kuveliswe i-silicon carbide kunye ne-carbon monoxide gas. Njengoko inkqubo yokunyibilikisa iqhubeka, indawo enobushushu obuphezulu kwi-charge iya kwanda kancinci kancinci, kwaye ubungakanani be-silicon carbide eveliswayo nayo iya kwanda. I-Silicon carbide yenziwa rhoqo kwi-furnace, kwaye ngokuphuma komphunga kunye nokuhamba, iikristale ziyakhula kancinci kancinci kwaye ekugqibeleni ziqokelelane zibe ziikristale ze-cylindrical.
Inxalenye yodonga olungaphakathi lwekristale iqala ukubola ngenxa yobushushu obuphezulu obudlula ii-degrees Celsius ezingama-2,600. I-silicon element eveliswa kukubola iya kudibana kwakhona ne-carbon element ekutshajweni ukuze yenze i-silicon carbide entsha.
Xa i-chemical reaction ye-silicon carbide (SiC) igqityiwe kwaye i-furnace ipholile, inyathelo elilandelayo linokuqala. Okokuqala, iindonga ze-furnace ziyaqhaqhwa, emva koko izinto eziluhlaza ezikwi-furnace zikhethwa kwaye zibekwe ngokwamaleko ngokwamaleko. Izinto eziluhlaza ezikhethiweyo ziyatyunyuzwa ukuze kufunyanwe izinto ezibumdaka esizifunayo. Okulandelayo, ukungcola kwizixhobo eziluhlaza kususwa ngokuhlanjwa ngamanzi okanye ngokucoca ngezisombululo ze-asidi kunye ne-alkali, kunye nokwahlulwa kwemagnethi kunye nezinye iindlela. Izinto eziluhlaza ezicociweyo kufuneka zomiswe kwaye emva koko zihlolwe kwakhona, kwaye ekugqibeleni kufumaneka umgubo we-silicon carbide ococekileyo. Ukuba kuyimfuneko, ezi powders zinokucutshungulwa ngakumbi ngokwendlela yokusetyenziswa, njengokubumba okanye ukugaywa kakuhle, ukuvelisa umgubo we-silicon carbide ocolekileyo.
Amanyathelo athile ngala alandelayo:
(1) Izinto ezisetyenziswa gwenxa
Umgubo omncinci we-silicon carbide eluhlaza uveliswa ngokutyumza i-silicon carbide eluhlaza okomeleleyo. Ulwakhiwo lweekhemikhali ze-silicon carbide kufuneka lube ngaphezu kwe-99%, kwaye i-carbon kunye ne-iron oxide ekhululekileyo kufuneka zibe ngaphantsi kwe-0.2%.
(2) Yaphukile
Ukutyumza isanti ye-silicon carbide ibe ngumgubo ocolekileyo, iindlela ezimbini ezisetyenziswayo eTshayina ngoku, enye kukutyumza i-intermittent wet ball mill, kwaye enye kukutyumza kusetyenziswa i-airflow powder mill.
(3) Ukwahlulwa kwemagnethi
Nokuba yeyiphi na indlela esetyenziswayo ukutyumza umgubo we-silicon carbide ube ngumgubo ocolekileyo, ukwahlukana kwe-magnetic emanzi kunye nokwahlukana kwe-magnetic yoomatshini kudla ngokusetyenziswa. Oku kungenxa yokuba akukho thuli ngexesha lokwahlukana kwe-magnetic emanzi, izinto ze-magnetic zahlulwe ngokupheleleyo, imveliso emva kokwahlukana kwe-magnetic ine-iron encinci, kwaye umgubo we-silicon carbide othathwe zizinto ze-magnetic nawo uncinci.
(4)Ukwahlulwa kwamanzi
Umgaqo osisiseko wendlela yokwahlula amanzi kukusebenzisa isantya esahlukileyo sokuhlalisa amasuntswana e-silicon carbide anobubanzi obahlukeneyo emanzini ukwenza uhlengahlengiso lobukhulu bamasuntswana.
(5) Uvavanyo lwe-ultrasound
Ngophuhliso lwetekhnoloji ye-ultrasonic, ikwasetyenziswa kakhulu ekuhlolweni kwe-ultrasonic kwetekhnoloji ye-micro-powder, enokusombulula iingxaki zokuhlola ezifana nokufunxwa okunamandla, ukuhlanganiswa okulula, umbane ophezulu ongashukumiyo, ubuncinci obuphezulu, uxinano oluphezulu, kunye nobunzima bokukhanya obuthile.
(6) Ukuhlolwa komgangatho
Ukuhlolwa komgangatho we-micropowder kubandakanya ukwakheka kweekhemikhali, ukwakheka kobukhulu beesuntswana kunye nezinye izinto. Ukuze ufumane iindlela zokuhlola kunye nemigangatho yomgangatho, nceda ujonge "Iimeko zobuGcisa beSilicon Carbide."
(7) Ukuveliswa kothuli lokusila
Emva kokuba umgubo omncinci uqokelelwe kwaye uhlolwe, intloko yezinto eziphathekayo ingasetyenziselwa ukulungisa umgubo wokusila. Ukuveliswa komgubo wokusila kunokunciphisa inkunkuma kwaye kwandise uthotho lwemveliso.
Ixesha leposi: Meyi-13-2024