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Inkqubo yeBCD
ngu admin on 24-09-18
Yintoni inkqubo yeBCD? Inkqubo ye-BCD yinkqubo yeteknoloji yenkqubo edibeneyo ye-single-chip yokuqala eyaziswa yi-ST ngo-1986. Le teknoloji inokwenza izixhobo ze-bipolar, i-CMOS kunye ne-DMOS kwi-chip efanayo. Ukubonakala kwayo kunciphisa kakhulu indawo ye-chip. Kunokuthiwa inkqubo ye-BCD isebenzisa ngokupheleleyo ...
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I-BJT, i-CMOS, i-DMOS kunye nezinye iitekhnoloji zenkqubo ye-semiconductor
ngu admin on 24-09-10
Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana. Iwebhusayithi yethu: https://www.vet-china.com/ Njengoko iinkqubo zokwenziwa kwe-semiconductor ziqhubeka nokwenza impumelelo, ingxelo edumileyo ebizwa ngokuba "nguMthetho kaMoore" ibijikeleza kwishishini. Kwaku p...
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Inkqubo yokwenziwa kweepateni zeSemiconductor ukuhamba-ukukrola
ngu admin on 24-09-10
Ukuthungwa okumanzi kwangaphambili kwakhuthaza ukuphuhliswa kweenkqubo zokucoca okanye uthuthu. Namhlanje, i-etching eyomileyo usebenzisa i-plasma ibe yinkqubo yokubhala eqhelekileyo. I-Plasma iqulethe ii-electron, ii-cations kunye neeradicals. Amandla asetyenziswa kwiplasma abangela ezona electron zingaphandle...
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Uphando kwi-8-intshi yeSiC epitaxial furnace kunye nenkqubo ye-homoepitaxial-Ⅱ
ngu admin on 24-09-04
2 Iziphumo zovavanyo kunye nengxoxo 2.1 Ubukhulu be-Epitaxial layer kunye nokufana kwe-Epitaxial layer thick, i-doping concentration kunye nokufana enye yezalathi ezingundoqo zokugweba umgangatho we-epitaxial wafers. Ubukhulu obulawulekayo ngokuchanekileyo, i-doping co ...
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Uphando kwi-8-intshi yeSiC epitaxial furnace kunye nenkqubo ye-homoepitaxial-Ⅰ
ngu admin on 24-09-04
Okwangoku, ishishini leSiC liyaguquka ukusuka kwi-150 mm (6 intshi) ukuya kwi-200 mm (8 intshi). Ukuze kuhlangatyezwane nemfuno engxamisekileyo yobukhulu obukhulu, obuphezulu beSiC homoepitaxial wafers kushishino, 150mm kunye 200mm 4H-SiC homoepitaxial wafers zalungiswa ngempumelelo kwi...
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Ukuphuculwa kobume beporous carbon pore -Ⅱ
ngu admin on 24-08-27
Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana. Iwebhusayithi yethu: https://www.vet-china.com/ Indlela yokusebenza yePhysical and chemical activation yePhysical and chemical activation ibhekisa kwindlela yokulungisa izinto ezimdaka ngokudibanisa ezi acti zimbini zingasentla...
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Ukuphucula ubume beporous carbon pore-Ⅰ
ngu admin on 24-08-27
Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana. Iwebhusayithi yethu: https://www.vet-china.com/ Eli phepha lihlalutya imarike yekhabhoni esebenzayo yangoku, lenza uhlalutyo olunzulu lwezinto eziluhlaza zekhabhoni esebenzayo, lazisa ubume bepore...
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Ukuqukuqela kwenkqubo yeSemiconductor-Ⅱ
ngu admin on 24-08-23
Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana. Iwebhusayithi yethu: https://www.vet-china.com/ Ukufakwa kwePoly kunye neSiO2: Emva koku, iPoly engaphezulu kunye neSiO2 zicinyiwe, oko kukuthi, zisusiwe. Ngeli xesha, i-directional etching isetyenziswa. Kuhlelo...
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Ukuhamba kwenkqubo ye-semiconductor
ngu admin on 24-08-23
Unokuyiqonda nokuba awuzange ufunde i-physics okanye imathematika, kodwa ilula kakhulu kwaye ilungele abaqalayo. Ukuba ufuna ukwazi ngakumbi malunga neCMOS, kufuneka ufunde umxholo walo mbandela, kuba kuphela emva kokuqonda ukuhamba kwenkqubo (oko kukuthi ...
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