Ukuhamba kwenkqubo ye-semiconductor-Ⅱ

Wamkelekile kwiwebhusayithi yethu ukuze ufumane ulwazi ngemveliso kunye nokubonisana.

Iwebhusayithi yethu:https://www.vet-china.com/

 

Ukukrolwa kwePoly kunye neSiO2:

Emva koku, iPoly kunye neSiO2 ezigqithisileyo ziyacinywa, oko kukuthi, zisuswe. Ngeli xesha, ziya kwicalaukukrolaKuhlelo lokusika, kukho udidi lokusika kwicala elithile kunye nokusika okungakhethiyo. Ukusika kwicala elithile kubhekisa kuukukrolakwicala elithile, ngelixa ukugrumba okungangqalanga kungangqalanga (nditshilo ngempazamo kakhulu. Ngamafutshane, kukususa i-SiO2 kwicala elithile ngokusebenzisa ii-asidi kunye neziseko ezithile). Kulo mzekelo, sisebenzisa ukugrumba okungqalileyo ukususa i-SiO2, kwaye kuba ngolu hlobo.

Okokugqibela, susa i-photoresist. Ngeli xesha, indlela yokususa i-photoresist ayikokusebenza ngokukhanya okukhankanyiweyo apha ngasentla, kodwa ngezinye iindlela, kuba akufuneki sichaze ubungakanani obuthile ngeli xesha, kodwa kukususa yonke i-photoresist. Okokugqibela, iba njengoko kubonisiwe kumfanekiso olandelayo.

Ngale ndlela, sifezekise injongo yokugcina indawo ethile yePoly SiO2.

 

Ukwakheka komthombo kunye nomsele wokukhupha amanzi:

Okokugqibela, makhe siqwalasele indlela umthombo kunye nomsele ophuma ngayo amanzi. Wonke umntu usakhumbula ukuba sithethe ngayo kwinqaku elidlulileyo. Umthombo kunye nomsele zifakwe kwi-ion ngohlobo olufanayo lwezinto. Okwangoku, singasebenzisa i-photoresist ukuvula indawo yomthombo/umsele apho uhlobo lwe-N kufuneka lufakwe khona. Ekubeni sithatha i-NMOS kuphela njengomzekelo, zonke iindawo ezikumfanekiso ongentla ziya kuvulwa, njengoko kubonisiwe kumfanekiso olandelayo.

Ekubeni inxalenye egqunywe yi-photoresist ingenakufakelwa (ukukhanya kuvaliwe), izinto zohlobo lwe-N ziya kufakelwa kuphela kwi-NMOS efunekayo. Ekubeni i-substrate engaphantsi kwe-poly ivaliwe yi-poly kunye ne-SiO2, ayizukufakelwa, ngoko ke iba ngolu hlobo.

Okwangoku, kwenziwe imodeli elula ye-MOS. Ngokwethiyori, ukuba i-voltage yongezwa kumthombo, i-drain, i-poly kunye ne-substrate, le MOS ingasebenza, kodwa asinakukwazi nje ukuthatha i-probe size songeze i-voltage ngqo kumthombo size sikhuphe i-drain. Ngeli xesha, kufuneka i-MOS wiring, oko kukuthi, kule MOS, qhagamshela iintambo ukuze udibanise ii-MOS ezininzi kunye. Makhe sijonge inkqubo yokudibanisa iintambo.

 

Ukwenza i-VIA:

Inyathelo lokuqala kukugubungela yonke iMOS ngomaleko weSiO2, njengoko kubonisiwe kumfanekiso ongezantsi:

Kakade ke, le SiO2 iveliswa yiCVD, kuba ikhawuleza kakhulu kwaye igcina ixesha. Oku kulandelayo kuseyinkqubo yokubeka i-photoresist kunye nokuveza. Emva kokuphela, kubonakala ngolu hlobo.

Emva koko sebenzisa indlela yokugrumba ukugrumba umngxuma kwi-SiO2, njengoko kubonisiwe kwicandelo elingwevu kumfanekiso ongezantsi. Ubunzulu balo mngxuma budibana ngqo nomphezulu we-Si.

Okokugqibela, susa i-photoresist uze ufumane le mbonakalo ilandelayo.

Okwangoku, into ekufuneka yenziwe kukugcwalisa umqhubi kulo mngxuma. Ngokuphathelele ukuba lo mqhubi uyintoni? Inkampani nganye yahlukile, uninzi lwazo zii-alloys ze-tungsten, ngoko ke lo mngxuma ungazaliswa njani? Indlela ye-PVD (Physical Vapor Deposition) isetyenziswa, kwaye umgaqo ufana nomfanekiso ongezantsi.

Sebenzisa ii-electron okanye ii-ion ezinamandla aphezulu ukuze uqhushumbise izinto ekujoliswe kuzo, kwaye izinto ezijoliswe kuzo eziphukileyo ziya kuwa ezantsi ngendlela yee-athomu, ngaloo ndlela zenze uqweqwe olungezantsi. Izinto ekujoliswe kuzo esihlala sizibona kwiindaba zibhekisa kwizinto ekujoliswe kuzo apha.
Emva kokugcwalisa umngxuma, kubonakala ngolu hlobo.

Kakade ke, xa siyizalisa, akunakwenzeka ukulawula ubukhulu bengubo ukuze ilingane ngqo nobunzulu bomngxuma, ngoko ke kuya kubakho okungaphezulu, ngoko ke sisebenzisa iteknoloji ye-CMP (Chemical Mechanical Polishing), evakala iphezulu kakhulu, kodwa eneneni iyasila, isusa iindawo ezigqithisileyo. Isiphumo sinje.

Okwangoku, sigqibile ukuvelisa umaleko we-via. Kakade ke, imveliso ye-via yenzelwe ikakhulu ukufakelwa kweentambo zomaleko wesinyithi ongasemva.

 

Imveliso yomaleko wesinyithi:

Phantsi kwezi meko zingasentla, sisebenzisa i-PVD ukususa olunye umaleko wesinyithi. Esi sinyithi ikakhulu si-alloy esekelwe kubhedu.

Emva kokutyhila nokuchonga, sifumana into esiyifunayo. Emva koko siqhubeke siqokelela izinto ezininzi de sihlangabezane neemfuno zethu.

Xa sizoba uyilo, siza kukuxelela ukuba zingaphi iileya zesinyithi kwaye ngenkqubo esetyenzisiweyo zinokubekwa ngaphezulu kwenani laleya, oko kuthetha ukuba zingaphi iileya ezinokubekwa.
Ekugqibeleni, sifumana olu lwakhiwo. Iphedi ephezulu yiphini yale chip, kwaye emva kokuyipakisha, iba yiphini esinokuyibona (ewe, ndiyidwebe ngokungacwangciswanga, akukho nto ibalulekileyo, umzekelo nje).

Le yinkqubo eqhelekileyo yokwenza itshiphu. Kule ngxaki, sifunde ngokuvezwa okubaluleke kakhulu, ukugrumba, ukufakwa kwee-ion, iityhubhu ze-furnace, i-CVD, i-PVD, i-CMP, njl.njl. kwi-semiconductor foundry.