Inqwaba ye-CVD Solid SiC ehlanzekile Kakhulu

Isithombe Esivelele Se-High Purity CVD Solid SiC Bulk

Incazelo emfushane:

Ukukhula okusheshayo kwamakristalu angawodwa e-SiC kusetshenziswa imithombo emikhulu ye-CVD-SiC (i-Chemical Vapor Deposition – i-SiC) kuyindlela evamile yokulungiselela izinto zekristalu elilodwa le-SiC ezisezingeni eliphezulu. Lawa makristalu angawodwa angasetshenziswa ezinhlotsheni ezahlukene zokusebenza, kufaka phakathi amadivayisi kagesi anamandla amakhulu, amadivayisi e-optoelectronic, ama-sensor, namadivayisi e-semiconductor.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-VET Energy isebenzisa ubumsulwa obuphezulu kakhului-silicon carbide (i-SiC)okwakhiwa ngokuthungwa komphunga wamakhemikhali(I-CVD)njengomthombo wokukhulaAmakristalu e-SiCngokuthuthwa komhwamuko ngokomzimba (i-PVT). Ku-PVT, izinto zomthombo zilayishwa ku-isikhuni esivuthayofuthi yafakwa kukristalu yembewu.

Umthombo ohlanzekile kakhulu uyadingeka ukuze kukhiqizwe ikhwalithi ephezuluAmakristalu e-SiC.

I-VET Energy igxile ekuhlinzekeni i-SiC yezinhlayiya ezinkulu ze-PVT ngoba inobuningi obukhulu kunezinto ezincane ezakhiwe ngokushisa okuzenzakalelayo kwamagesi aqukethe i-Si ne-C. Ngokungafani nokushiswa kwesigaba esiqinile noma ukusabela kwe-Si ne-C, ayidingi isithando sokushisa esizinikele noma isinyathelo sokushiswa esithatha isikhathi esitsheni sokukhulisa. Le nto yezinhlayiya ezinkulu inesilinganiso sokuhwamuka esicishe silingane, okuthuthukisa ukufana kokugijima kuze kube yilapho kugijima.

Isingeniso:
1. Lungisa umthombo wamabhulokhi e-CVD-SiC: Okokuqala, udinga ukulungiselela umthombo wamabhulokhi e-CVD-SiC asezingeni eliphezulu, ngokuvamile ahlanzekile kakhulu futhi anobuningi obukhulu. Lokhu kungalungiswa ngendlela ye-chemical vapor deposition (CVD) ngaphansi kwezimo zokusabela ezifanele.

2. Ukulungiswa kwe-substrate: Khetha i-substrate efanele njenge-substrate yokukhula kwe-SiC single crystal. Izinto ze-substrate ezisetshenziswa kakhulu zifaka i-silicon carbide, i-silicon nitride, njll., ezihambisana kahle ne-SiC single crystal ekhulayo.

3. Ukushisa kanye nokufaka i-sublimation: Beka umthombo we-CVD-SiC block kanye ne-substrate esithandweni sokushisa okuphezulu bese unikeza izimo ezifanele zokufaka i-sublimation. I-sublimation isho ukuthi ekushiseni okuphezulu, umthombo we-block ushintsha ngokuqondile kusuka esimweni esiqinile kuya esimweni somusi, bese uphinda ujiye ebusweni be-substrate ukuze wakhe ikristalu elilodwa.

4. Ukulawulwa kwezinga lokushisa: Ngesikhathi senqubo yokwenziwa kwe-sublimation, i-gradient yezinga lokushisa kanye nokusatshalaliswa kwezinga lokushisa kudinga ukulawulwa ngokunembile ukuze kukhuthazwe ukwenziwa kwe-sublimation komthombo we-block kanye nokukhula kwamakristalu angawodwa. Ukulawulwa kwezinga lokushisa okufanele kungafinyelela ikhwalithi yekristalu efanele kanye nesilinganiso sokukhula.

5. Ukulawulwa kwesimo sezulu: Ngesikhathi senqubo yokususa umoya, umoya wokusabela nawo udinga ukulawulwa. Igesi engenawo umoya ohlanzekile kakhulu (njenge-argon) ivame ukusetshenziswa njengegesi yokuthwala ukugcina ingcindezi efanele kanye nobumsulwa nokuvimbela ukungcoliswa ukungcola.

6. Ukukhula kwekristalu elilodwa: Umthombo webhulokhi le-CVD-SiC udlula ekushintsheni kwesigaba somusi ngesikhathi senqubo ye-sublimation bese ubuyela emuva ebusweni be-substrate ukuze wakhe isakhiwo sekristalu elilodwa. Ukukhula okusheshayo kwamakristalu elilodwa le-SiC kungatholakala ngezimo ezifanele ze-sublimation kanye nokulawulwa kwe-gradient yokushisa.