Wafer mai waferyankewa yana ɗaya daga cikin mahimman hanyoyin haɗin gwiwa a cikin samar da na'urar samar da wutar lantarki. An tsara wannan matakin don raba da'irori ko guntu na musamman daidai da wafers na semiconductor.
Mabuɗin zuwawafer ɗin waferyankewa shine don iya raba kwakwalwan mutum ɗaya yayin da ake tabbatar da cewa tsarin da da'irori masu laushi sun shiga cikinwafer ɗin waferba su lalace ba. Nasarar ko gazawar tsarin yankewa ba wai kawai yana shafar ingancin rabuwa da yawan guntu ba, har ma yana da alaƙa kai tsaye da ingancin dukkan tsarin samarwa.
▲Nau'o'i uku na yanke wafer da aka saba da su | Tushe: KLA CHINA
A halin yanzu, taron jama'awafer ɗin waferAn raba hanyoyin yankewa zuwa:
Yanke ruwan wukake: araha, yawanci ana amfani da shi don kauriwafers
Yanke Laser: farashi mai yawa, yawanci ana amfani da shi don wafers masu kauri fiye da 30μm
Yankewar plasma: farashi mai yawa, ƙarin ƙuntatawa, yawanci ana amfani da shi ga wafers masu kauri ƙasa da 30μm
Yanke ruwan wuka na inji
Yanke ruwan wuka tsari ne na yankewa a kan layin rubutu ta hanyar faifan niƙa mai sauri (ruwa). Yawanci ana yin ruwan wuka ne da kayan lu'u-lu'u masu gogewa ko siriri, waɗanda suka dace da yankewa ko yin tsagi a kan wafers na silicon. Duk da haka, a matsayin hanyar yankewa ta injiniya, yanke ruwan wuka ya dogara ne akan cire kayan zahiri, wanda zai iya haifar da tsagewa ko fashewa na gefen guntu cikin sauƙi, don haka yana shafar ingancin samfur da rage yawan amfanin ƙasa.
Ingancin samfurin ƙarshe da aka samar ta hanyar aikin injina yana shafar sigogi da yawa, gami da saurin yankewa, kauri na ruwan wukake, diamita na ruwan wukake, da saurin juyawar ruwan wukake.
Cikakken yankewa shine mafi mahimmancin hanyar yanke wuka, wanda ke yanke kayan aikin gaba ɗaya ta hanyar yankewa zuwa wani abu mai tsayayye (kamar tef ɗin yankewa).
▲ Yanke-cikakken yanke-yanke na inji | Cibiyar tushen hoto
Rabin yanke hanya ce ta sarrafawa wadda ke samar da rami ta hanyar yankewa zuwa tsakiyar aikin. Ta hanyar ci gaba da yin aikin tsagi, ana iya samar da wuraren tsefe da kuma wuraren da suka yi kama da allura.
▲ Yanke rabin ruwan wuka na inji | Cibiyar tushen hoto
Yanka biyu hanya ce ta sarrafawa wadda ke amfani da yanka biyu mai sanduna biyu don yin yanka cikakke ko rabi akan layukan samarwa guda biyu a lokaci guda. Yanka biyu yana da gatari biyu na spindle. Ana iya samun babban aiki ta hanyar wannan tsari.
▲ Yanke-yanke-yanke na injina na ruwa biyu | Cibiyar tushen hoto
Yanke mataki yana amfani da yanke biyu tare da sanduna biyu don yin yanke cikakke da rabi a matakai biyu. Yi amfani da ruwan wukake da aka inganta don yanke layin waya a saman wafer da ruwan wukake da aka inganta don sauran lu'ulu'u guda ɗaya na silicon don cimma ingantaccen sarrafawa.
▲ Yanke ruwan wuka na inji - yanke mataki | Cibiyar tushen hoto
Yanke Bevel wata hanya ce ta sarrafawa wadda ke amfani da wuka mai gefen V a gefen rabin yanke don yanke wafer a matakai biyu yayin aikin yanke mataki. Ana yin aikin chamfering yayin aikin yankewa. Saboda haka, ana iya cimma ƙarfin mold mai yawa da kuma sarrafawa mai inganci.
▲ Yanke ruwan wuka na inji - yanke bevel | Cibiyar sadarwa ta tushen hoto
Yanke Laser
Yanke Laser wata fasaha ce ta yanke wafer mara hulɗa da juna wadda ke amfani da hasken laser mai mayar da hankali don raba guntu-guntu daban-daban daga wafers na semiconductor. Hasken laser mai ƙarfi yana mai da hankali kan saman wafer ɗin kuma yana ƙafe ko cire kayan aiki tare da layin yankewa da aka riga aka tsara ta hanyar cirewa ko tsarin narkewar zafi.
▲ Zane-zanen yanke laser | Tushen hoto: KLA CHINA
Nau'ikan lasers da ake amfani da su a yanzu sun haɗa da lasers na ultraviolet, lasers na infrared, da lasers na femtosecond. Daga cikinsu, ana amfani da lasers na ultraviolet don cirewa cikin sanyi daidai saboda yawan kuzarin photon da suke da shi, kuma yankin da zafi ke shafa ƙarami ne ƙwarai, wanda zai iya rage haɗarin lalacewar zafi ga wafer da kwakwalwan da ke kewaye da shi yadda ya kamata. Lasers na infrared sun fi dacewa da wafers masu kauri saboda suna iya shiga cikin kayan. Lasers na Femtosecond suna samun ingantaccen cire kayan aiki tare da canja wurin zafi kusan ba tare da wani tasiri ba ta hanyar hasken ultrashort.
Yankewar Laser yana da fa'idodi masu yawa fiye da yanke ruwan wukake na gargajiya. Da farko, a matsayin tsarin da ba ya taɓawa, yankewar Laser ba ya buƙatar matsin lamba na zahiri akan wafer, wanda ke rage matsalolin karyewa da tsagewa da aka saba samu a yanka na inji. Wannan fasalin yana sa yankewar Laser ya dace musamman don sarrafa wafers masu rauni ko siriri, musamman waɗanda ke da tsari mai rikitarwa ko siffofi masu kyau.
▲ Zane-zanen yanke Laser | Cibiyar sadarwa ta tushen hoto
Bugu da ƙari, babban daidaito da daidaito na yanke laser yana ba shi damar mayar da hankali kan hasken laser zuwa ƙaramin girman tabo, tallafawa tsarin yankewa mai rikitarwa, da kuma cimma rabuwar mafi ƙarancin tazara tsakanin guntu. Wannan fasalin yana da mahimmanci musamman ga na'urorin semiconductor masu ci gaba waɗanda ke da girman raguwa.
Duk da haka, yanke laser yana da wasu ƙuntatawa. Idan aka kwatanta da yanke ruwan wukake, yana da jinkiri kuma ya fi tsada, musamman a manyan masana'antu. Bugu da ƙari, zaɓar nau'in laser da ya dace da kuma inganta sigogi don tabbatar da ingantaccen cire kayan aiki da kuma yankin da zafi ya shafa na iya zama ƙalubale ga wasu kayan aiki da kauri.
Yankewar Laser
A lokacin yanke laser ablation, ana mayar da hankali kan hasken laser ɗin daidai a kan takamaiman wuri a saman wafer ɗin, kuma ana jagorantar kuzarin laser ɗin bisa ga tsarin yankewa da aka riga aka tsara, ana yanke shi a hankali ta cikin wafer ɗin zuwa ƙasa. Dangane da buƙatun yankewa, ana yin wannan aikin ta amfani da laser mai pulsed ko laser mai ci gaba da raƙuman ruwa. Domin hana lalacewar wafer ɗin saboda yawan dumama laser ɗin a gida, ana amfani da ruwan sanyaya don sanyaya da kuma kare wafer ɗin daga lalacewar zafi. A lokaci guda, ruwan sanyaya kuma zai iya cire barbashi da aka samar yayin aikin yankewa, hana gurɓatawa da kuma tabbatar da ingancin yankewa.
Laser yankewa marar ganuwa
Ana iya mayar da hankali kan laser ɗin don canja wurin zafi zuwa babban jikin wafer ɗin, wata hanya da ake kira "yankewar laser mara ganuwa". Don wannan hanyar, zafi daga laser yana haifar da gibba a cikin layukan scribe. Waɗannan wurare masu rauni sannan su sami irin wannan tasirin shiga ta hanyar karyewa lokacin da wafer ɗin ya miƙe.
▲Babban tsari na yankewar Laser mara ganuwa
Tsarin yankewa mara ganuwa tsari ne na laser na ciki, maimakon cire laser inda ake shanye laser a saman. Tare da yankewa mara ganuwa, ana amfani da kuzarin hasken laser mai tsawon rai wanda yake da haske kaɗan ga kayan substrate na wafer. An raba tsarin zuwa manyan matakai guda biyu, ɗaya tsari ne na Laser, ɗayan kuma tsari ne na rabuwa ta injiniya.
▲Hasken laser yana haifar da rami a ƙasan saman wafer, kuma ɓangarorin gaba da baya ba su shafi ba | Cibiyar sadarwa ta tushen hoto
A mataki na farko, yayin da hasken laser ke duba wafer ɗin, hasken laser ɗin yana mai da hankali kan wani takamaiman wuri a cikin wafer ɗin, yana samar da wurin fashewa a ciki. Ƙarfin hasken yana haifar da jerin tsage-tsage a ciki, waɗanda ba su kai ga dukkan kauri na wafer ɗin zuwa saman sama da ƙasa ba.
▲Kwatanta wafers ɗin silicon mai kauri 100μm da aka yanke ta hanyar ruwan wukake da kuma hanyar yankewa mara ganuwa ta laser | Cibiyar sadarwa ta tushen hoto
A mataki na biyu, ana faɗaɗa tef ɗin guntu a ƙasan wafer ɗin a zahiri, wanda ke haifar da damuwa a cikin tsage-tsage a cikin wafer ɗin, wanda ke haifar da shi a cikin aikin laser a mataki na farko. Wannan damuwa yana sa tsage-tsage ya miƙe tsaye zuwa saman saman wafer ɗin sama da ƙasa, sannan a raba wafer ɗin zuwa guntu a kan waɗannan wuraren yankewa. A cikin yankewa mara ganuwa, yawanci ana amfani da rabin yankewa ko rabin yankewa a ƙasa don sauƙaƙe raba wafers zuwa guntu ko guntu.
Muhimman fa'idodin yanke laser mara ganuwa akan cirewar laser:
• Ba a buƙatar sanyaya ruwa
• Babu wani tarkace da aka samar
• Babu yankunan da zafi ya shafa da za su iya lalata da'irori masu laushi
Yankewar jini
Yankewar plasma (wanda kuma aka sani da etching na plasma ko dry etching) wata fasaha ce ta yanke wafer wanda ke amfani da etching na reactive ion (RIE) ko etching na ion mai zurfi (DRIE) don raba guntu daban-daban daga wafers na semiconductor. Fasahar tana cimma yankewa ta hanyar amfani da sinadarai wajen cire kayan da aka riga aka tsara ta amfani da plasma.
A lokacin da ake yanke sinadarin plasma, ana sanya wafer din semiconductor a cikin wani ɗaki mai injin cire hayaki, sannan a shigar da cakuda iskar gas mai sarrafawa a cikin ɗakin, sannan a yi amfani da filin lantarki don samar da plasma wanda ke ɗauke da yawan ions da radicals masu amsawa. Waɗannan nau'ikan masu amsawa suna hulɗa da kayan wafer kuma suna cire kayan wafer ɗin da aka zaɓa ta hanyar layin scribe ta hanyar haɗakar amsawar sinadarai da kuma fesawa ta zahiri.
Babban fa'idar yankewar plasma shine yana rage matsin lamba na injiniya akan wafer da guntu kuma yana rage yuwuwar lalacewa da taɓawa ta jiki ke haifarwa. Duk da haka, wannan tsari ya fi rikitarwa kuma yana ɗaukar lokaci fiye da sauran hanyoyi, musamman lokacin da ake mu'amala da wafers masu kauri ko kayan da ke da juriya ga etching, don haka amfaninsa a cikin samar da taro yana da iyaka.
▲ Cibiyar sadarwa ta tushen hoto
A fannin kera semiconductor, ana buƙatar zaɓar hanyar yanke wafer bisa ga abubuwa da yawa, ciki har da halayen kayan wafer, girman guntu da yanayin lissafi, daidaito da daidaito da ake buƙata, da kuma jimlar farashin samarwa da inganci.
Lokacin Saƙo: Satumba-20-2024