Isonka esisicabaUkusika yenye yezona zinto zibalulekileyo ekuvelisweni kwe-power semiconductor. Eli nyathelo lenzelwe ukwahlula ngokuchanekileyo iisekethe ezidibeneyo okanye iitships kwii-wafers ze-semiconductor.
Isitshixo sokubai-waferukusika kukukwazi ukwahlula iitships ezahlukeneyo ngelixa kuqinisekiswa ukuba izakhiwo ezibuthathaka kunye neesekethe zifakwe ngaphakathii-waferazonakalanga. Impumelelo okanye ukungaphumeleli kwenkqubo yokusika akuchaphazeli kuphela umgangatho wokwahlulwa kunye nokuveliswa kwetship, kodwa kukwanxulumene ngokuthe ngqo nokusebenza kakuhle kwenkqubo yonke yemveliso.
▲Iintlobo ezintathu eziqhelekileyo zokusikwa kwe-wafer | Umthombo: KLA CHINA
Okwangoku, i-commoni-waferIinkqubo zokusika zahlulwe zibe:
Ukusika iiblade: ixabiso eliphantsi, lidla ngokusetyenziselwa ukutyebaiiwafers
Ukusika nge-laser: ixabiso eliphezulu, lidla ngokusetyenziselwa ii-wafers ezinobukhulu obungaphezulu kwe-30μm
Ukusika iplasma: ixabiso eliphezulu, imiqathango emininzi, idla ngokusetyenziswa kwiiwafers ezinobukhulu obungaphantsi kwe-30μm
Ukusika iiblade ngoomatshini
Ukusika iiblade yinkqubo yokusika ecaleni komgca we-scribe ngediski yokugaya ejikelezayo ngesantya esiphezulu (iblade). Iblade idla ngokwenziwa ngezinto zedayimani ezirhabaxa okanye ezibhityileyo kakhulu, ezifanelekileyo ukunqunqa okanye ukugoba kwii-wafers ze-silicon. Nangona kunjalo, njengendlela yokusika ngoomatshini, ukusika iiblade kuxhomekeke ekususweni kwezinto ezibonakalayo, okunokukhokelela ekuqhekekeni okanye ekuqhekekeni komphetho we-chip, ngaloo ndlela kuchaphazela umgangatho wemveliso kunye nokunciphisa isivuno.
Umgangatho wemveliso yokugqibela eveliswa yinkqubo yokusarha ngoomatshini uchatshazelwa ziiparameter ezininzi, kubandakanya isantya sokusika, ubukhulu beblade, ububanzi beblade, kunye nesantya sokujikeleza kweblade.
Ukusika ngokupheleleyo yeyona ndlela ilula yokusika iiblade, enqumla ngokupheleleyo umsebenzi ngokusika ube yinto esisigxina (njengeteyiphu yokusika).
▲ Ukusika ngokupheleleyo kweblade yoomatshini | Inethiwekhi yomthombo womfanekiso
Ukusikwa kwesiqingatha yindlela yokucubungula evelisa umngxuma ngokusika embindini wento yokusebenza. Ngokuqhubeka nokwenza inkqubo yokusikwa, ikama kunye neendawo ezimile okwenaliti zinokuveliswa.
▲ Ukusikwa kwe-blade yoomatshini | Inethiwekhi yomthombo womfanekiso
Ukusika kabini yindlela yokucubungula esebenzisa isarha esika kabini esinee-spindle ezimbini ukwenza ukusika okupheleleyo okanye okuphakathi kwimigca emibini yemveliso ngaxeshanye. Isarha esika kabini sinee-axes ezimbini ze-spindle. Ukukhupha okuphezulu kunokufezekiswa ngale nkqubo.
▲ Ukusika kabini kweblade yoomatshini | Inethiwekhi yomthombo womfanekiso
I-Step cut isebenzisa isarha esiphindwe kabini esinee-spindle ezimbini ukwenza ukusika okupheleleyo kunye nesiqingatha kwizigaba ezibini. Sebenzisa ii-blades ezilungiselelwe ukusika umaleko wocingo kumphezulu we-wafer kunye nee-blades ezilungiselelwe i-silicon single crystal eseleyo ukuze kufezekiswe ukucubungula okusemgangathweni ophezulu.
▲ Ukusika iibhleyidi ngoomatshini – ukusika amanyathelo | Inethiwekhi yomthombo womfanekiso
Ukusika i-bevel yindlela yokucubungula esebenzisa i-blade enomphetho ofana no-V kumphetho osikiweyo phakathi ukusika i-wafer ngamanqanaba amabini ngexesha lenkqubo yokusika inyathelo. Inkqubo yokusika i-chamfering yenziwa ngexesha lenkqubo yokusika. Ke ngoko, amandla aphezulu okubumba kunye nokulungiswa komgangatho ophezulu kunokufezekiswa.
▲ Ukusika iibhleyidi ngoomatshini – ukusika ibhevel | Inethiwekhi yomthombo womfanekiso
Ukusika nge-laser
Ukusika nge-laser bubuchwepheshe bokusika i-wafer obungenakho ukuchukumisa obusebenzisa umqadi we-laser ogxile ekuhlukaniseni iitships zomntu ngamnye kwii-wafer ze-semiconductor. Umqadi we-laser onamandla aphezulu ugxile kumphezulu we-wafer kwaye uyayikhupha okanye uyisuse impahla ecaleni komgca wokusika omiselweyo ngeenkqubo zokubola okanye zokubola kobushushu.
▲ Umzobo wokusika nge-laser | Umthombo womfanekiso: KLA CHINA
Iindidi zeelaser ezisetyenziswa kakhulu ngoku ziquka iilaser ze-ultraviolet, iilaser ze-infrared, kunye neelaser ze-femtosecond. Phakathi kwazo, iilaser ze-ultraviolet zihlala zisetyenziselwa ukucocwa okucothayo ngenxa yamandla azo aphezulu e-photon, kwaye indawo echaphazeleka bubushushu incinci kakhulu, nto leyo enokunciphisa ngempumelelo umngcipheko wokonakala kobushushu kwi-wafer kunye neetships ezijikelezileyo. Iilaser ze-infrared zilungele ngcono iiwafer ezityebileyo kuba zinokungena nzulu kwizinto. Iilaser ze-Femtosecond zisusa izinto ngokuchanekileyo nangokufanelekileyo ngokudluliselwa kobushushu okuncinci kakhulu ngeepulse zokukhanya ezimfutshane kakhulu.
Ukusika nge-laser kuneengenelo ezibalulekileyo kunokusika iiblade zemveli. Okokuqala, njengenkqubo engadibaniyo, ukusika nge-laser akudingi uxinzelelo lomzimba kwi-wafer, nto leyo enciphisa ukuqhekeka kunye neengxaki zokuqhekeka eziqhelekileyo ekusikeni ngoomatshini. Olu phawu lwenza ukusika nge-laser kulunge ngakumbi ekucubunguleni ii-wafers ezibuthathaka okanye ezibhityileyo kakhulu, ingakumbi ezo zinezakhiwo ezinzima okanye iimpawu ezintle.
▲ Umzobo wokusika nge-laser | Inethiwekhi yomthombo womfanekiso
Ukongeza, ukuchaneka okuphezulu kunye nokuchaneka kokusika nge-laser kwenza ukuba ikwazi ukujolisa umqadi we-laser kubungakanani obuncinci kakhulu, ixhase iipateni zokusika ezintsonkothileyo, kwaye ifezekise ukwahlulahlula isithuba esincinci phakathi kweetships. Olu phawu lubaluleke kakhulu kwizixhobo ze-semiconductor eziphambili ezinobukhulu obunciphayo.
Nangona kunjalo, ukusika nge-laser kunemida ethile. Xa kuthelekiswa nokusika iiblade, kuhamba kancinci kwaye kubiza kakhulu, ingakumbi kwimveliso enkulu. Ukongeza, ukukhetha uhlobo lwe-laser olufanelekileyo kunye nokwenza ngcono iiparameter ukuqinisekisa ukususwa kwezinto ngokufanelekileyo kunye nendawo encinci echaphazeleka bubushushu kunokuba nzima kwizixhobo ezithile kunye nobukhulu.
Ukusika i-laser ablation
Ngexesha lokusikwa kwe-laser ablation, umqadi we-laser ugxile ngokuchanekileyo kwindawo ethile kumphezulu we-wafer, kwaye amandla e-laser akhokelwa ngokwendlela yokusika emiselweyo, kancinci kancinci ukusika i-wafer ukuya ezantsi. Ngokuxhomekeke kwiimfuno zokusika, olu sebenzi lwenziwa kusetyenziswa i-pulsed laser okanye i-continuous wave laser. Ukuze kuthintelwe umonakalo kwi-wafer ngenxa yokufudumeza kakhulu kwe-laser, amanzi okupholisa asetyenziselwa ukupholisa nokukhusela i-wafer kumonakalo wobushushu. Kwangaxeshanye, amanzi okupholisa anokususa ngokufanelekileyo amasuntswana aveliswe ngexesha lenkqubo yokusika, athintele ungcoliseko kwaye aqinisekise umgangatho wokusika.
Ukusika okungabonakaliyo kweLaser
I-laser ingajoliswa ekudluliseleni ubushushu emzimbeni oyintloko we-wafer, indlela ebizwa ngokuba yi-"invisible laser cutting". Kule ndlela, ubushushu obuvela kwi-laser budala izithuba kwiindlela zokubhala. Ezi ndawo zibuthathaka emva koko zifumana isiphumo esifanayo sokungena ngokuqhekeka xa i-wafer isoluliwe.
▲ Inkqubo ephambili yokusika okungabonakaliyo kwe-laser
Inkqubo yokusika engabonakaliyo yinkqubo yelaser yokufunxa ngaphakathi, endaweni yokukhupha ilaser apho ilaser ifunxwa khona phezu komhlaba. Ngokusika okungabonakaliyo, kusetyenziswa amandla emitha yelaser anobude obucacileyo obuncinci kwizinto ze-wafer substrate. Inkqubo yahlulwe yangamanyathelo amabini aphambili, elinye liyinkqubo esekelwe kwilaser, kwaye elinye liyinkqubo yokwahlulahlula ngoomatshini.
▲Umqadi welaser udala ukugqobhoka ngaphantsi komphezulu we-wafer, kwaye amacala angaphambili nangasemva awachaphazeleki | Inethiwekhi yomthombo womfanekiso
Kwinyathelo lokuqala, njengoko umqadi welaser uskena i-wafer, umqadi welaser ugxila kwindawo ethile ngaphakathi kwe-wafer, nto leyo eyenza indawo yokuqhekeka ngaphakathi. Amandla omqadi abangela ukuba kubekho uthotho lweentanda ngaphakathi, ezingekadluli kulo lonke ubukhulu be-wafer ukuya phezulu nasezantsi.
▲Uthelekiso lwee-wafers ze-silicon ezinobukhulu obuyi-100μm ezisikwe ngendlela ye-blade kunye nendlela yokusika engabonakaliyo ye-laser | Inethiwekhi yomthombo womfanekiso
Kwinyathelo lesibini, iteyiphu yetshiphu esezantsi kwe-wafer iyandiswa ngokwasemzimbeni, nto leyo ebangela uxinzelelo lokuxinana kwimifantu engaphakathi kwe-wafer, ebangelwa yinkqubo yelaser kwinyathelo lokuqala. Olu xinzelelo lubangela ukuba imifantu idlulele ngokuthe nkqo kwiindawo eziphezulu nezisezantsi ze-wafer, ize yahlule i-wafer ibe ziitshiphusi ezikuloo ndawo yokusika. Kwisike engabonakaliyo, isikephu esinqunyiweyo okanye esinqunyiweyo esingaphantsi ngokuqhelekileyo sisetyenziselwa ukwenza kube lula ukwahlula ii-wafer zibe ziitshiphusi okanye iitshiphusi.
Iingenelo eziphambili zokusika nge-laser engabonakaliyo phezu kokususwa kwe-laser:
• Akukho sipholisi sifunekayo
• Akukho nkunkuma iveliswayo
• Akukho ndawo zichaphazelekileyo bubushushu ezingonakalisa iisekethe ezibuthathaka
Ukusika ngeplasma
Ukusika ngeplasma (okwaziwa ngokuba yi-plasma etching okanye i-dry etching) bubuchwepheshe obuphambili bokusika nge-wafer obusebenzisa i-reactive ion etching (RIE) okanye i-deep reactive ion etching (DRIE) ukwahlula ii-chips kwii-semiconductor wafers. Le teknoloji ifezekisa ukusika ngokususa izinto ngokweekhemikhali kwimigca yokusika emiselweyo kusetyenziswa i-plasma.
Ngexesha lenkqubo yokusika iplasma, i-semiconductor wafer ifakwa kwigumbi lokucoca, umxube wegesi olawulwayo ophendulayo ungeniswa kwigumbi, kwaye kusetyenziswa intsimi yombane ukuvelisa iplasma equlethe uxinzelelo oluphezulu lwee-ion ezisabelayo kunye nee-radicals. Ezi ntlobo ze-reactive ziyasebenzisana nezinto ze-wafer kwaye zisusa ngokukhetha izinto ze-wafer kumgca we-scribe ngokudibanisa i-chemical reaction kunye ne-physical sputtering.
Eyona nzuzo iphambili yokusika iplasma kukuba inciphisa uxinzelelo loomatshini kwi-wafer kunye ne-chip kwaye inciphisa umonakalo onokubakho ngenxa yokudibana ngokomzimba. Nangona kunjalo, le nkqubo iyinkimbinkimbi kwaye ithatha ixesha kunezinye iindlela, ingakumbi xa usebenza ngee-wafer ezityebileyo okanye izinto ezinokumelana okuphezulu kokugrumba, ngoko ke ukusetyenziswa kwayo kwimveliso yobuninzi kulinganiselwe.
▲Inethiwekhi yomthombo womfanekiso
Kwimveliso ye-semiconductor, indlela yokusika i-wafer kufuneka ikhethwe ngokusekelwe kwizinto ezininzi, kuquka iimpawu zezinto ze-wafer, ubungakanani be-chip kunye ne-geometry, ukuchaneka nokuchaneka okufunekayo, kunye neendleko zemveliso kunye nokusebenza kakuhle.
Ixesha leposi: Septemba-20-2024