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What are the defects of silicon carbide epitaxial layer
by admin on 24-06-05
The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradation. The study of the mechanism of substrate defects extending into the epi...
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Oxidized standing grain and epitaxial growth technology-Ⅱ
by admin on 24-05-30
2. Epitaxial thin film growth The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used for voltage resistance and carrier transport. In order to increase breakdown voltage and minimize con...
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Gallium oxide single crystal and epitaxial growth technology
by admin on 24-05-30
Wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. People have high expectations for the application prospects of silicon carbide in electric vehicles and power grids, as well as the application prospects of gallium...
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What are the technical barriers to silicon carbide?Ⅱ
by admin on 24-05-22
The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include: 1) Since crystals need to grow in a high-temperature sealed environment above 2000°C, the temperature control requirements are extremely high; 2) Since silicon carbide has ...
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What are the technical barriers to silicon carbide?
by admin on 24-05-22
The first generation of semiconductor materials is represented by traditional silicon (Si) and germanium (Ge), which are the basis for integrated circuit manufacturing. They are widely used in low-voltage, low-frequency, and low-power transistors and detectors. More than 90% of semiconductor prod...
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How is SiC micro powder made?
by admin on 24-05-13
SiC single crystal is a Group IV-IV compound semiconductor material composed of two elements, Si and C, in a stoichiometric ratio of 1:1. Its hardness is second only to diamond. The carbon reduction of silicon oxide method to prepare SiC is mainly based on the following chemical reaction formula...
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How do epitaxial layers help semiconductor devices?
by admin on 24-05-13
The origin of the name epitaxial wafer First, let’s popularize a small concept: wafer preparation includes two major links: substrate preparation and epitaxial process. The substrate is a wafer made of semiconductor single crystal material. The substrate can directly enter the wafer manufacturi...
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Introduction to chemical vapor deposition (CVD) thin film deposition technology
by admin on 24-05-06
Chemical Vapor Deposition (CVD) is an important thin film deposition technology, often used to prepare various functional films and thin-layer materials, and is widely used in semiconductor manufacturing and other fields. 1. Working principle of CVD In the CVD process, a gas precursor (one or...
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The “black gold” secret behind the photovoltaic semiconductor industry: the desire and dependence on isostatic graphite
by admin on 24-05-06
Isostatic graphite is a very important material in photovoltaics and semiconductors. With the rapid rise of domestic isostatic graphite companies, the monopoly of foreign companies in China has been broken. With continuous independent research and development and technological breakthroughs, the ...
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