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  • Several types of processes for power semiconductor wafer cutting

    Several types of processes for power semiconductor wafer cutting

    Wafer cutting is one of the important links in power semiconductor production. This step is designed to accurately separate individual integrated circuits or chips from semiconductor wafers. The key to wafer cutting is to be able to separate individual chips while ensuring that the delicate struc...
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  • BCD process

    BCD process

      What is BCD process? BCD process is a single-chip integrated process technology first introduced by ST in 1986. This technology can make bipolar, CMOS and DMOS devices on the same chip. Its appearance greatly reduces the area of ​​the chip. It can be said that the BCD process fully utilizes the...
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  • BJT, CMOS, DMOS and other semiconductor process technologies

    BJT, CMOS, DMOS and other semiconductor process technologies

    Welcome to our website for product information and consultation. Our website: https://www.vet-china.com/   As semiconductor manufacturing processes continue to make breakthroughs, a famous statement called "Moore's Law" has been circulating in the industry. It was p...
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  • Semiconductor patterning process flow-etching

    Semiconductor patterning process flow-etching

    Early wet etching promoted the development of cleaning or ashing processes. Today, dry etching using plasma has become the mainstream etching process. Plasma consists of electrons, cations and radicals. The energy applied to the plasma causes the outermost electrons of t...
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  • Research on 8-inch SiC epitaxial furnace and homoepitaxial process-Ⅱ

    Research on 8-inch SiC epitaxial furnace and homoepitaxial process-Ⅱ

      2 Experimental results and discussion 2.1 Epitaxial layer thickness and uniformity Epitaxial layer thickness, doping concentration and uniformity are one of the core indicators for judging the quality of epitaxial wafers. Accurately controllable thickness, doping co...
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  • Research on 8-inch SiC epitaxial furnace and homoepitaxial process-Ⅰ

    Research on 8-inch SiC epitaxial furnace and homoepitaxial process-Ⅰ

    Currently, the SiC industry is transforming from 150 mm (6 inches) to 200 mm (8 inches). In order to meet the urgent demand for large-size, high-quality SiC homoepitaxial wafers in the industry, 150mm and 200mm 4H-SiC homoepitaxial wafers were successfully prepared on do...
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  • Optimization of porous carbon pore structure -Ⅱ

    Optimization of porous carbon pore structure -Ⅱ

    Welcome to our website for product information and consultation. Our website: https://www.vet-china.com/   Physical and chemical activation method Physical and chemical activation method refers to the method of preparing porous materials by combining the above two acti...
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  • Optimization of porous carbon pore structure-Ⅰ

    Optimization of porous carbon pore structure-Ⅰ

    Welcome to our website for product information and consultation. Our website: https://www.vet-china.com/   This paper analyzes the current activated carbon market, conducts an in-depth analysis of the raw materials of activated carbon, introduces the pore structure...
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  • Semiconductor process flow-Ⅱ

    Semiconductor process flow-Ⅱ

    Welcome to our website for product information and consultation. Our website: https://www.vet-china.com/   Etching of Poly and SiO2: After this, the excess Poly and SiO2 are etched away, that is, removed. At this time, directional etching is used. In the classification...
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