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Characteristics of silicon carbide graphite mold
Silicon Carbide Graphite Mold Silicon carbide graphite mold is a composite mold with silicon carbide (SiC) as the base and graphite as the reinforcement material. This mold has excellent thermal conductivity, high temperature resistance, corrosion resistance an...Read more -
Semiconductor process full process of photolithography
The manufacturing of each semiconductor product requires hundreds of processes. We divide the entire manufacturing process into eight steps: wafer processing-oxidation-photolithography-etching-thin film deposition-epitaxial growth-diffusion-ion implantation. To help you...Read more -
4 billion! SK Hynix announces semiconductor advanced packaging investment at Purdue Research Park
West Lafayette, Indiana – SK hynix Inc. announced plans to invest nearly $4 billion to build an advanced packaging manufacturing and R&D facility for artificial intelligence products at Purdue Research Park. Establishing a key link in the U.S. semiconductor supply chain in West Lafayett...Read more -
Laser technology leads the transformation of silicon carbide substrate processing technology
1. Overview of silicon carbide substrate processing technology The current silicon carbide substrate processing steps include: grinding the outer circle, slicing, chamfering, grinding, polishing, cleaning, etc. Slicing is an important step in semiconductor substrate pr...Read more -
Mainstream thermal field materials: C/C composite materials
Carbon-carbon composites are a type of carbon fiber composites, with carbon fiber as the reinforcement material and deposited carbon as the matrix material. The matrix of C/C composites is carbon. Since it is almost entirely composed of elemental carbon, it has excellent high temperature resistan...Read more -
Three major techniques for SiC crystal growth
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-temperature chemical vapor deposition (HTCVD). PVT is a well-established process for producing SiC sin...Read more -
Third-generation semiconductor GaN and related epitaxial technology brief introduction
1. Third-generation semiconductors The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of transistors and integrated circuit technology. The first-generation semiconductor materials laid the...Read more -
23.5 billion, Suzhou’s super unicorn is going to IPO
After 9 years of entrepreneurship, Innoscience has raised more than 6 billion yuan in total financing, and its valuation has reached an astonishing 23.5 billion yuan. The list of investors is as long as dozens of companies: Fukun Venture Capital, Dongfang State-owned Assets, Suzhou Zhanyi, Wujian...Read more -
How do tantalum carbide coated products enhance the corrosion resistance of materials?
Tantalum carbide coating is a commonly used surface treatment technology that can significantly improve the corrosion resistance of materials. Tantalum carbide coating can be attached to the surface of the substrate through different preparation methods, such as chemical vapor deposition, physica...Read more
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