Ikoranabuhanga ry'ibanze ryo gushyira umwuka mu buryo bwa plasma (PECVD)

1. Inzira z'ingenzi zo gushyira umwuka w'ubumara mu maraso

 

Gushyira umwuka mu kirere mu buryo bwa plasma (PECVD) ni ikoranabuhanga rishya ryo gukura kwa firime ntoya binyuze mu gukora imyuka hakoreshejwe plasma isohora urumuri. Kubera ko ikoranabuhanga rya PECVD ritegurwa binyuze mu gukora imyuka, imiterere y'imikorere ya plasma idahuye ikoreshwa neza, kandi uburyo bwo gutanga ingufu mu buryo bwo gukora imyakura burahinduka cyane. Muri rusange, iyo ikoranabuhanga rya PECVD rikoreshejwe mu gutegura firime ntoya, gukura kwa firime ntoya ahanini bikubiyemo inzira eshatu z'ibanze zikurikira.

 

Ubwa mbere, muri plasma idahuje, electron zikorana na gaze y'inyito mu cyiciro cya mbere kugira ngo ziboze gaze y'inyito maze zikore uruvange rwa iyoni n'amatsinda akora;

 

Icya kabiri, ubwoko bwose bw'amatsinda akora bukwirakwira bugatwara hejuru no ku rukuta rwa filimi, kandi ingaruka za kabiri hagati y'ibitera imbaraga ziba icyarimwe;

 

Amaherezo, ubwoko bwose bw'ibikomoka ku mikorere y'ibanze n'iya kabiri bigera ku buso bw'ikura birahuzwa kandi bigahura n'ubuso, bigaherekezwa no kongera kurekurwa kwa molekile z'imyuka.

 

By’umwihariko, ikoranabuhanga rya PECVD rishingiye ku buryo bwo gusohora urumuri rishobora gutuma umwuka wa reaction uhinduka iyonize kugira ngo ukore plasma munsi yo gukurura ingufu z’amashanyarazi zo hanze. Muri plasma isohora urumuri, ingufu za kinetic za electrons zihuta bitewe n’amashanyarazi yo hanze akenshi ziba hafi 10ev, cyangwa zirenzeho, ibi bikaba bihagije kugira ngo zisenye imigozi ya chemical ya molecules za gaze reactive. Kubwibyo, binyuze mu gukubitana kwa inelastic kwa electrons zifite ingufu nyinshi na molecules za gaze reactive, molecules za gaze zizahinduka iyoni cyangwa zigahinduka kugira ngo zikore atome zitagira aho zibogamiye n’ibikomoka kuri molekile. Iyoni nziza zihuta bitewe n’urwego rwa ion rwihutisha ingufu z’amashanyarazi kandi zigahura na electrode yo hejuru. Hariho kandi amashanyarazi make ya ion layer hafi ya electrode yo hasi, bityo substrate nayo iterwa na iyoni ku rugero runaka. Kubera iyo mpamvu, ibintu bitagira aho bibogamiye bivamo kuvunika bikwirakwira ku rukuta rw’umuyoboro na substrate. Mu gihe cyo guhindagurika no gukwirakwira, utu duce n’amatsinda (atome na molecules zitagira aho zibogamiye byitwa amatsinda) bizanyura mu buryo bwa molecules za iyoni na molecules zo mu itsinda bitewe n’inzira ngufi y’ubusa. Imiterere ya shimi y’ibintu bikora (cyane cyane amatsinda) bigera ku gice cy’ubutaka bikameneka irakora cyane, kandi firime ikorwa n’imikoranire hagati yabyo.

 

2. Inzira z'ibinyabutabire mu maraso

 

Kubera ko gukurura umwuka uva mu buryo bwo gusohora urumuri ahanini ari ugukubitana kwa elegitoroniki, ingaruka z'ibanze muri plasma ziratandukanye, kandi imikoranire hagati ya plasma n'ubuso bukomeye nayo iragoye cyane, ibyo bigatuma bigorana kwiga uburyo PECVD ikora. Kugeza ubu, sisitemu nyinshi z'ingenzi zo gukora reaction zanogejwe n'igerageza kugira ngo haboneke filime zifite imiterere myiza. Kugira ngo hashyirweho filime nto zishingiye kuri silicon zishingiye ku ikoranabuhanga rya PECVD, niba uburyo bwo gushyiramo bushobora kumenyekana cyane, igipimo cyo gushyiramo filime nto zishingiye kuri silicon gishobora kwiyongera cyane hashingiwe ku kwemeza imiterere myiza y'ibikoresho.

 

Muri iki gihe, mu bushakashatsi bwa filime ntoya zishingiye kuri silicon, hydrogen diluted silane (SiH4) ikoreshwa cyane nk'umwuka utuma habaho reaction kuko hari ingano runaka ya hydrogen muri filime ntoya zishingiye kuri silicon. H igira uruhare runini muri filime ntoya zishingiye kuri silicon. Ishobora kuzuza imigozi ihagaze mu miterere y'ibikoresho, ikagabanya cyane ingufu z'ikosa, kandi ikamenya byoroshye uburyo electron ya valence igenzura ibikoresho. Kuva spear et al. yabanje kubona ingaruka zo gukoresha silicon thin films kandi igategura PN junction ya mbere, ubushakashatsi ku itegurwa n'ikoreshwa rya filime ntoya zishingiye kuri silicon zishingiye ku ikoranabuhanga rya PECVD bwakozwe ku buryo bwihuse. Kubwibyo, reaction ya chemical muri filime ntoya zishingiye kuri silicon zishyizwe mu ikoranabuhanga rya PECVD izasobanurwa kandi iganirweho muri ibi bikurikira.

 

Mu gihe cyo gusohora urumuri, kubera ko electron ziri muri plasma ya silane zifite ingufu zirenze nyinshi za EV, H2 na SiH4 bizabora iyo bihuye na electron, ari byo bigize reaction y'ibanze. Iyo tudatekereje ku miterere y'ibyishimo hagati, dushobora kubona reaction zikurikira za sihm (M = 0,1,2,3) na H

 

e+SiH4→SiH2+H2+e (2.1)

 

e+SiH4→SiH3+ H+e (2.2)

 

e+SiH4→Si+2H2+e (2.3)

 

e+SiH4→SiH+H2+H+e (2.4)

 

e+H2→2H+e (2.5)

 

Dukurikije ubushyuhe busanzwe bwo gukora molekile zo mu butaka, ingufu zisabwa mu nzira zo kwitandukanya (2.1) ~ (2.5) ni 2.1, 4.1, 4.4, 5.9 EV na 4.5 EV uko bikurikirana. Electron nyinshi zikoresha ingufu muri plasma nazo zishobora kunyura muri izi ngero zikurikira za ionization.

 

e+SiH4→SiH2++H2+2e (2.6)

 

e+SiH4→SiH3++ H+2e (2.7)

 

e+SiH4→Si++2H2+2e (2.8)

 

e+SiH4→SiH++H2+H+2e (2.9)

 

Ingufu zisabwa kuri (2.6) ~ (2.9) ni 11.9, 12.3, 13.6 na 15.3 EV uko bikurikirana. Bitewe n'itandukaniro ry'ingufu z'impinduka, amahirwe y'impinduka za (2.1) ~ (2.9) ntangana cyane. Byongeye kandi, sihm yakozwe hamwe n'uburyo bw'impinduka (2.1) ~ (2.5) izahura n'ingaruka zikurikira zo kuyinika, nko

 

SiH+e→SiH++2e (2.10)

 

SiH2+e→SiH2++2e (2.11)

 

SiH3+e→SiH3++2e (2.12)

 

Iyo igisubizo cyavuzwe haruguru gikozwe hakoreshejwe uburyo bumwe bwa electron, ingufu zisabwa ni hafi 12 eV cyangwa zirenga. Ukurikije ko umubare wa electron zifite ingufu nyinshi ziri hejuru ya 10ev muri plasma ifite ion nkeya ifite ubucucike bwa electron bwa 1010cm-3 ari muto cyane munsi y'umuvuduko w'ikirere (10-100pa) wo gutegura filime zishingiye kuri silicon, amahirwe yo gukusanya ionization muri rusange ni make ugereranyije n'amahirwe yo gushyuha. Kubwibyo, igipimo cy'ibinyabutabire bya ionized byavuzwe haruguru muri plasma ya silane ni gito cyane, kandi itsinda ridafite aho ribogamiye rya sihm ni ryo rinini. Ibisubizo by'isesengura rya spectrum y'ubunini nabyo byemeza uyu mwanzuro [8]. Bourquard et al. Yakomeje agaragaza ko igipimo cya sihm cyagabanutse mu buryo bwa sih3, sih2, Si na SIH, ariko igipimo cya SiH3 cyari inshuro eshatu kurusha SIH. Robertson et al. Bavuze ko mu bicuruzwa bidafite aho bibogamiye bya sihm, silane y'umwimerere yakoreshejwe cyane cyane mu gusohora ingufu nyinshi, mu gihe sih3 yakoreshejwe cyane cyane mu gusohora ingufu nke. Uburyo ibipimo by’ibice biva hejuru kugeza hasi byari SiH3, SiH, Si, SiH2. Kubwibyo, ibipimo by’imikorere ya plasma bigira ingaruka zikomeye ku miterere y’ibicuruzwa bidafite aho bihuriye na sihm.

 

Uretse ibyo byavuzwe haruguru byo kwitandukanya no gukora ionization, ibikorwa bya kabiri hagati ya molekile za ionic nabyo ni ingenzi cyane

 

SiH2 ++ SiH4 → SiH3 ++ SiH3 (2.13)

 

Kubwibyo, mu bijyanye n'ingano ya iyoni, sih3 + iruta sih2 +. Bishobora gusobanura impamvu hari iyoni nyinshi za sih3 + kurusha iyoni za sih2 + muri plasma ya SiH4.

 

Byongeye kandi, hazabaho uburyo atome za molekile zigongana aho atome za hydrogen ziri muri plasma zifata hydrogen muri SiH4

 

H+ SiH4→SiH3+H2 (2.14)

 

Ni igisubizo cya exothermic kandi ni imbarutso y’iremwa rya si2h6. Birumvikana ko aya matsinda atari mu mimerere y’ubutaka gusa, ahubwo anashishikajwe n’imimerere y’ibyishimo muri plasma. Isesengura ry’ibyuka bya plasma ya silane rigaragaza ko hari imiterere y’ibyishimo byemewe bya Si, SIH, h, na imiterere y’ibyishimo bya SiH2, SiH3.

Igipfundikizo cya silicon carbide (16)


Igihe cyo kohereza: Mata-07-2021
Ikiganiro kuri WhatsApp kuri interineti!