Hejuru na Hasi Igishushanyo Igice cy'ukwezi Igice cya SiC Furnace

Hejuru na Hasi Igishushanyo Igice-Ukwezi Igice cya SiC Itanura ryerekanwe

Ibisobanuro bigufi:

VET Ingufu nuwabigize umwuga kandi utanga ibice byingenzi bigize itanura rya silicon karbide epitaxial. Iwacuigishushanyo cya kabiri cy'ukwezi igice ikoresha igishushanyo mbonera cyiza cyahujwe na tekinoroji ya CVD igezweho. Yashizweho kubushyuhe bwo hejuru kandi bwangirika cyane epitaxial ibidukikije. Igishushanyo kinini-cyera gitanga ibice byiza birwanya ubushyuhe bwo hejuru (> 1600℃) hamwe nubushyuhe bwumuriro, kwemeza ubushyuhe bwumuriro; igipfundikizo cya CVD gikora urwego rwinshi rwo kurinda hejuru hifashishijwe ikoranabuhanga rya CVD, ritezimbere cyane imiti irwanya okiside na anti-etching, kandi ikongerera igihe cya serivisi inshuro zirenga 3.

Ibikoresho:Igishushanyo-cyiza cya isostatike

Isuku: <5ppm

CVD:SiC, TaC, Carbone Pyrolytic

Guhitamo:Bisanzwe cyangwa OEM irahari

Ohereza imeri kuri twe Kuramo nka PDF

Ibicuruzwa birambuye

Ibicuruzwa

Igishushanyo Igice cy'ukwezi igiceni ikintu cyingenzi gikoreshwa mubikorwa byo gukora semiconductor, cyane cyane kubikoresho bya epitaxial SiC. Twifashishije tekinoroji yacu yatanzwe kugirango igice cya kabiri cyigice gifite isuku ryinshi cyane, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe na CVD, birashobora gutanga ibice bitandukanye byabigenewe bya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Ibiranga ibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111 ）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1

VET Energy ni uruganda rukora umwuga rwibanda kuri R&D no gukora ibikoresho byo mu rwego rwo hejuru nka grafite, karubide ya silicon, quartz, ndetse no kuvura ibikoresho nka SiC coating, TaC coating, carbone carbone, pirolitike ya karubone, n'ibindi.

Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Inyungu zingufu za VET zirimo:
• Uruganda bwite na laboratoire yabigize umwuga;
• Inganda ziyobora inganda nubuziranenge;
• Igiciro cyo guhatanira & Igihe cyo gutanga vuba;
• Ubufatanye butandukanye bwinganda kwisi yose;

Turakwakiriye neza kugirango ubone uruganda na laboratoire igihe icyo aricyo cyose!