Sebōpi sa kholo ea kristale ke lisebelisoa tsa mantlha tsasilicon carbidekgolo ya kristale. E tšoana le sebōpi sa setso sa crystalline silicon grade crystal growth. Sebopeho sa sebōpi ha se thata haholo. Haholo-holo e entsoe ka 'mele oa sebōpi, tsamaiso ea mocheso, mochine oa phetisetso ea li-coil, tsamaiso ea ho fumana vacuum le mokhoa oa ho lekanya, tsamaiso ea tsela ea khase, tsamaiso ea ho pholisa, tsamaiso ea taolo, joalo-joalo.kristale ea silicon carbidejoalo ka boleng, boholo, conductivity joalo-joalo.
Ka lehlakoreng le leng, mocheso nakong ea kholo eakristale ea silicon carbidee phahame haholo 'me e ke ke ea behoa leihlo. Ka hona, bothata bo boholo bo teng ts'ebetsong ka boeona. Mathata a maholo ke a latelang:
(1) Bothata ba taolo ea tšimo ea mocheso:
Ho beha leihlo sebaka se koetsoeng sa mocheso o phahameng ho thata ebile ha ho laolehe. E fapane le lisebelisoa tsa khale tsa silicon tse thehiloeng ho silicon e lebisang ho hula lisebelisoa tsa khōlo ea kristale ka tekanyo e phahameng ea ho iketsetsa le mokhoa o hlokomelehang le o laolehang oa ho hōla ha kristale, likristale tsa silicon carbide li hōla sebakeng se koetsoeng sebakeng sa mocheso o phahameng ka holimo ho 2,000 ℃, 'me mocheso oa kholo o lokela ho laoloa ka nepo nakong ea tlhahiso, e leng se etsang hore taolo ea mocheso e be thata;
(2) Bothata ba ho laola sebopeho sa kristale:
Li-micropipes, polymorphic inclusions, dislocations le liphoso tse ling li atisa ho etsahala nakong ea kholo, 'me li ama le ho fetoha. Li-micropipes (MP) ke bokooa ba mofuta o nang le boholo ba li-micron tse 'maloa ho isa ho mashome a li-micron, e leng liphoso tse bolaeang lisebelisoa. Silicon carbide single crystals e kenyelletsa mefuta e fetang 200 e fapaneng ea kristale, empa ke mefuta e seng mekae feela ea kristale (mofuta oa 4H) ke lisebelisoa tsa semiconductor tse hlokahalang bakeng sa tlhahiso. Phetoho ea sebopeho sa Crystal e bonolo ho etsahala nakong ea kholo, e bakang bofokoli ba ho kenyelletsa polymorphic. Ka hona, hoa hlokahala ho laola ka nepo likarolo tse joalo ka karo-karolelano ea silicon-khabone, sekhahla sa mocheso oa kholo, sekhahla sa kholo ea kristale, le khatello ea phallo ea moea. Ho phaella moo, ho na le mocheso oa mocheso tšimong ea mocheso oa silicon carbide khōlo e le 'ngoe ea kristale, e lebisang khatellong ea tlhaho ea ka hare le ho senyeha ho bakoang (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) nakong ea ts'ebetso ea kholo ea kristale, kahoo e ama boleng le ts'ebetso ea epitaxy e latelang le lisebelisoa.
(3) Taolo e thata ea doping:
Ho kenyelletsoa ha litšila tse ka ntle ho tlameha ho laoloa ka thata ho fumana kristale e tsamaisang le doping e lebisang;
(4) Sekhahla se tlase sa khōlo:
Sekhahla sa kholo ea silicon carbide se lieha haholo. Lisebelisoa tsa khale tsa silicon li hloka matsatsi a 3 feela ho hola ho ba molamu oa kristale, ha lithupa tsa silicon carbide crystal li hloka matsatsi a 7. Sena se lebisa katlehong e tlase ea tlhaho ea silicon carbide le tlhahiso e fokolang haholo.
Ka lehlakoreng le leng, litekanyetso tsa kholo ea silicon carbide epitaxial li batla li le boima haholo, ho kenyelletsa le ho tiisa moea oa lisebelisoa, botsitso ba khatello ea khase ka kamoreng ea karabelo, taolo e nepahetseng ea nako ea kenyelletso ea khase, ho nepahala ha karo ea khase, le taolo e tiileng ea mocheso oa deposition. Haholo-holo, ka ntlafatso ea boemo ba ho hanyetsa motlakase oa mochine, bothata ba ho laola likarolo tsa mantlha tsa epitaxial wafer bo eketsehile haholo. Ho phaella moo, ka keketseho ea botenya ba lera la epitaxial, mokhoa oa ho laola ho tšoana ha resistivity le ho fokotsa sekoli se nang le bokooa ha u ntse u netefatsa hore botenya bo fetohile phephetso e 'ngoe e kholo. Ka tsamaiso ea motlakase, hoa hlokahala ho kopanya li-sensor le li-actuator tse phahameng ka ho fetisisa ho netefatsa hore li-parameter tse fapa-fapaneng li ka laoloa ka nepo le ka mokhoa o tsitsitseng. Ka nako e ts'oanang, optimization ea algorithm ea taolo le eona ke ea bohlokoa. E hloka ho khona ho fetola leano la taolo ka nako ea sebele ho latela pontšo ea maikutlo ho ikamahanya le liphetoho tse sa tšoaneng ho silicon carbide epitaxial growth process.
Mathata a ka sehloohong hokarolo ea silicon carbidetlhahiso:
Nako ea poso: Jun-07-2024