Ni izihe ngorane za tekiniki z'itanura rya silicon carbide crystal growth?

Ifuru ikuramo kristu ni cyo gikoresho cy'ingenzi cyakarubide ya silikonigukura kwa kristu. Bisa n'itanura risanzwe rikuramo kristu rya silicon. Imiterere y'itanura ntabwo igoye cyane. Rigizwe ahanini n'umubiri w'itanura, sisitemu yo gushyushya, uburyo bwo kohereza uruziga, sisitemu yo gupima no gupima imvange, sisitemu yo gukonjesha, sisitemu yo kugenzura, n'ibindi. Imiterere y'ubushyuhe n'imiterere y'imikorere bigena ibipimo by'ingenzi by'kirisituni ya karubide ya silikonink'ubwiza, ingano, ubushobozi bwo gutwara amashanyarazi n'ibindi.

Ku ruhande rumwe, ubushyuhe mu gihe cyo gukura kwakirisituni ya karubide ya silikonini byinshi cyane kandi ntibishobora gukurikiranwa. Bityo rero, ingorane nyamukuru iri mu nzira ubwayo. Ingorane nyamukuru ni izi zikurikira:

(1) Ingorane mu kugenzura ubushyuhe:

Gukurikirana umwobo ufunze w’ubushyuhe bwinshi biragoye kandi ntibigenzurwa. Bitandukanye n’ibikoresho bisanzwe byo gukuramo kristale bishingiye kuri silicon bifite urwego rwo hejuru rw’imikorere n’uburyo bwo gukuramo kristale bugaragara kandi bugenzurwa, kristale za silicon carbide zikurira ahantu hafunze ahantu hari ubushyuhe bwinshi buri hejuru ya 2,000°C, kandi ubushyuhe bw’ikura bugomba kugenzurwa neza mu gihe cyo gukora, ibyo bigatuma kugenzura ubushyuhe bigorana;

(2) Ingorane mu kugenzura imiterere ya kristu:

Imiyoboro mito, ibice bya polymorphic, kwimuka n'ibindi bidafite ishingiro bikunze kubaho mu gihe cyo gukura, kandi bigira ingaruka no guhinduka hagati yabyo. Imiyoboro mito (MP) ni inenge zo mu bwoko bwa through-type zifite ingano ya mikoroni nyinshi kugeza kuri mikoroni icumi, ari zo ntege nke zica ibikoresho. Silicon carbide single crystals zirimo ubwoko butandukanye bwa crystal burenga 200, ariko imiterere mike ya crystal (ubwoko bwa 4H) ni yo bikoresho bya semiconductor bikenewe kugira ngo hakorwe. Impinduka mu ishusho ya crystal biroroshye kubaho mu gihe cyo gukura, bigatera inenge za polymorphic. Kubwibyo, ni ngombwa kugenzura neza ibipimo nka silicon-carbon ratio, gradient y'ubushyuhe bw'ikura, igipimo cy'ikura rya crystal, n'umuvuduko w'umwuka. Byongeye kandi, hari gradient y'ubushyuhe mu gice cy'ubushyuhe cya silicon carbide single crystal growth, bigatera stress y'imbere mu mubiri n'ihindagurika ryayo (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) mu gihe cyo gukura kwa crystal, bityo bigira ingaruka ku bwiza n'imikorere ya epitaxy n'ibikoresho bikurikira.

(3) Kurwanya gukoresha imiti igabanya ubukana bw'ibiyobyabwenge bigoranye:

Kwinjira kw'imyanda yo hanze bigomba kugenzurwa neza kugira ngo haboneke kristale iyobora ibintu irimo doping iyobora icyerekezo;

(4) Igipimo cy'izamuka rito:

Igipimo cyo gukura kwa silicon carbide kiragenda buhoro cyane. Ibikoresho bya silicon gakondo bikenera iminsi 3 gusa kugira ngo bikure bibe kristu, mu gihe kristu carbide crystal rods zikenera iminsi 7. Ibi bituma kristu carbide idakora neza kandi umusaruro wayo ukaba muke cyane.

Ku rundi ruhande, ibipimo by'izamuka rya epitaxial ya silikoni carbide birasaba cyane, harimo ubushyuhe bw'ibikoresho, umuvuduko wa gaze mu cyumba cy'ibizamini, kugenzura neza igihe cyo gutangiza gaze, ukuri kw'ikigereranyo cya gaze, no gucunga neza ubushyuhe bwo gushyiramo. By'umwihariko, hamwe no kunoza urwego rw'ubudahangarwa bw'amashanyarazi y'igikoresho, ingorane zo kugenzura ibipimo by'ingenzi bya epitaxial wafer zariyongereye cyane. Byongeye kandi, hamwe n'ubwiyongere bw'ubugari bw'urwego rwa epitaxial, uburyo bwo kugenzura ubunini bw'ubudahangarwa no kugabanya ubucucike bw'inenge mu gihe ugenzura ko ubunini bwabaye ikindi kibazo gikomeye. Muri sisitemu yo kugenzura amashanyarazi, ni ngombwa gushyiramo sensor na actuators bifite ubuhanga bwo hejuru kugira ngo harebwe ko ibipimo bitandukanye bishobora kugenzurwa neza kandi neza. Muri icyo gihe, kunoza algorithm yo kugenzura nabyo ni ingenzi. Bigomba kuba bishobora guhindura ingamba zo kugenzura mu gihe nyacyo hakurikijwe ikimenyetso cy'ibitekerezo kugira ngo bihuze n'impinduka zitandukanye mu mikurire ya epitaxial ya silikoni carbide.

Ingorane nyamukuru murisubstrate ya karubide ya silikoniinganda: