Ni izihe ngorane za tekiniki za silicon karbide itanura yo gukura?

Itanura ryo gukura rya kristu nibikoresho byibanze kurisilicon karbidegukura kwa kirisiti. Irasa na gakondo ya kristaline silicon yo mu rwego rwo hejuru itanura. Imiterere y'itanura ntabwo igoye cyane. Igizwe ahanini numubiri witanura, sisitemu yo gushyushya, uburyo bwo kohereza ibicuruzwa, uburyo bwo kubona vacuum no gupima, sisitemu ya gazi, sisitemu yo gukonjesha, sisitemu yo kugenzura, nibindi.silicon karbide kristalnk'ubuziranenge, ingano, ubwikorezi n'ibindi.

Ku ruhande rumwe, ubushyuhe mugihe cyo gukura kwasilicon karbide kristalni hejuru cyane kandi ntishobora gukurikiranwa. Kubwibyo, ingorane nyamukuru ziri mubikorwa ubwabyo. Ingorane nyamukuru nizo zikurikira:

(1) Ingorane zo kugenzura umurima:

Igenzura ryifunze ryubushyuhe bwo hejuru buragoye kandi ntigenzurwa. Bitandukanye na gakondo ya silikoni ishingiye kubisubizo bitaziguye-gukurura ibikoresho byo gukura kwa kirisiti hamwe nurwego rwo hejuru rwo kwikora no kugenzura no kugenzurwa no gukura kwa kirisiti, kristal ya karbide ya kariside ikurira ahantu hafunze ahantu hafite ubushyuhe buri hejuru ya 2000 ℃, kandi ubushyuhe bwikura bugomba kugenzurwa neza mugihe cyo gukora, bigatuma kugenzura ubushyuhe bigorana;

(2) Ingorane zo kugenzura imiterere ya kristu:

Micropipes, polymorphic inclusion, dislocations nizindi nenge zikunda kugaragara mugihe cyikura, kandi bigira ingaruka kandi bigahinduka. Micropipes (MP) zinyuze muburyo bwubwoko bufite ubunini bwa microne nyinshi kugeza kuri microni mirongo, aribwo bwicanyi bwibikoresho. Silicon karbide imwe ya kristu ikubiyemo uburyo burenga 200 butandukanye bwa kristu, ariko ibyubatswe bike bya kristu (ubwoko bwa 4H) nibikoresho bya semiconductor bisabwa kugirango bikorwe. Guhindura imiterere ya Crystal biroroshye kugaragara mugihe cyo gukura, bikavamo inenge ya polymorphic. Niyo mpamvu, birakenewe kugenzura neza ibipimo nkibipimo bya silikoni-karubone, ubushyuhe bwikura ryikigereranyo, umuvuduko wikura rya kirisiti, hamwe nigitutu cyumuyaga. Byongeye kandi, hari ubushyuhe buringaniye mubushuhe bwumuriro wa silicon karbide imwe yo gukura kwa kirisiti, biganisha ku guhangayika kwimbere mu gihugu ndetse no kuvamo (indege ya basal dislocation BPD, screw dislocation TSD, edge dislocation TED) mugihe cyo gukura kwa kirisiti, bityo bikagira ingaruka kumiterere no mumikorere ya epitaxy nibindi bikoresho.

(3) Kugenzura doping bigoye:

Kwinjiza umwanda wo hanze bigomba kugenzurwa cyane kugirango ubone kristu ikora hamwe na doping yerekanwe;

(4) Iterambere ryihuta:

Iterambere rya karbide ya silicon iratinda cyane. Ibikoresho bya silikoni gakondo bikenera iminsi 3 gusa kugirango bikure mu nkoni ya kirisiti, mugihe silicon karbide ya kristu ikenera iminsi 7. Ibi biganisha kumikorere isanzwe ya silicon karbide nibisohoka cyane.

Ku rundi ruhande, ibipimo byo gukura kwa silicon karbide epitaxial birasaba cyane, harimo ubukana bw’ikirere cy’ibikoresho, ihagarikwa ry’umuvuduko wa gaze mu cyumba cyabigenewe, kugenzura neza igihe cyo gutangiza gaze, kumenya neza igipimo cya gaze, no gucunga neza ubushyuhe bw’ubushyuhe. By'umwihariko, hamwe no kunoza urwego rwumubyigano wa voltage urwego, ingorane zo kugenzura ibipimo fatizo bya epitaxial wafer yiyongereye cyane. Byongeye kandi, hamwe no kwiyongera kwubugari bwurwego rwa epitaxial, uburyo bwo kugenzura uburinganire bwurwanya no kugabanya ubucucike bwinenge mugihe ububyimbye bwabaye ikindi kibazo gikomeye. Muri sisitemu yo kugenzura amashanyarazi, birakenewe guhuza ibyuma bisobanutse neza hamwe na moteri kugirango tumenye neza ko ibipimo bitandukanye bishobora kugenzurwa neza kandi neza. Mugihe kimwe, gutezimbere kugenzura algorithm nabyo ni ngombwa. Irakeneye gushobora guhindura ingamba zo kugenzura mugihe nyacyo ukurikije ibimenyetso byatanzwe kugirango ihuze nimpinduka zitandukanye mumikurire ya silicon karbide epitaxial.

Ingorane nyamukuru murisilicon karbide substrategukora: