Injin samar da wutar lantarki mai girma shine babban kayan aiki donsilicon carbideGirman lu'ulu'u. Yana kama da tanderun girma na lu'ulu'u na silicon na gargajiya. Tsarin tanderun ba shi da rikitarwa sosai. Ya ƙunshi jikin tanderun, tsarin dumama, tsarin watsa na'ura, tsarin tara iska da aunawa, tsarin hanyar iskar gas, tsarin sanyaya, tsarin sarrafawa, da sauransu. Filin zafi da yanayin aiki suna ƙayyade manyan alamunlu'ulu'u na silicon carbidekamar inganci, girma, watsawa da sauransu.
A gefe guda, zafin jiki yayin girmalu'ulu'u na silicon carbideyana da girma sosai kuma ba za a iya sa ido a kansa ba. Saboda haka, babban wahalar tana cikin tsarin da kansa. Manyan matsalolin sune kamar haka:
(1) Wahala a sarrafa filin zafi:
Kula da ramin da aka rufe yana da wahala kuma ba za a iya sarrafa shi ba. Sabanin kayan aikin girma na silicon na gargajiya wanda aka yi da silicon kai tsaye tare da babban matakin sarrafa kansa da kuma tsarin girma na kristal da za a iya gani da sarrafawa, lu'ulu'u na silicon carbide suna girma a cikin sarari a rufe a cikin yanayin zafi mai yawa sama da 2,000℃, kuma zafin girma yana buƙatar a sarrafa shi daidai lokacin samarwa, wanda ke sa sarrafa zafin jiki ya yi wahala;
(2) Wahala a sarrafa siffar lu'ulu'u:
Ƙananan bututu, abubuwan da suka haɗa da polymorphic, tarwatsewa da sauran lahani suna iya faruwa a lokacin girma, kuma suna shafar juna da kuma haɓaka juna. Ƙananan bututu (MP) lahani ne ta hanyar nau'i tare da girman microns da yawa zuwa goma na microns, waɗanda sune manyan lahani na na'urori. Lu'ulu'u guda ɗaya na silicon carbide sun haɗa da nau'ikan lu'ulu'u daban-daban sama da 200, amma kaɗan daga cikin tsarin lu'ulu'u (nau'in 4H) sune kayan semiconductor da ake buƙata don samarwa. Canjin siffar lu'ulu'u yana da sauƙin faruwa yayin tsarin girma, wanda ke haifar da lahani na haɗa polymorphic. Saboda haka, ya zama dole a sarrafa sigogi daidai kamar rabon silicon-carbon, canjin zafin jiki na girma, ƙimar girma na lu'ulu'u, da matsin lamba na kwararar iska. Bugu da ƙari, akwai canjin zafin jiki a cikin filin zafi na haɓakar lu'ulu'u guda ɗaya na silicon carbide, wanda ke haifar da damuwa ta ciki da kuma raguwar da ke haifarwa (basal plane dislocation BPD, dislocation TSD, dislocation gefen TED) yayin tsarin haɓakar lu'ulu'u, ta haka yana shafar inganci da aikin epitaxy da na'urori masu zuwa.
(3) Matsalar sarrafa amfani da kwayoyi masu kara kuzari:
Dole ne a sarrafa gabatar da ƙazanta na waje sosai don samun lu'ulu'u mai sarrafawa tare da doping na shugabanci;
(4) Rage saurin girma:
Yawan girman silicon carbide yana da jinkiri sosai. Kayan silicon na gargajiya suna buƙatar kwana 3 kawai don su girma su zama sandar lu'ulu'u, yayin da sandunan lu'ulu'u na silicon carbide suna buƙatar kwana 7. Wannan yana haifar da ƙarancin ingancin samarwa na silicon carbide da ƙarancin fitarwa.
A gefe guda kuma, sigogin girmar epitaxial na silicon carbide suna da matuƙar wahala, gami da matse iskar kayan aiki, kwanciyar hankali na matsin lamba na iska a cikin ɗakin amsawa, daidaitaccen sarrafa lokacin shigar da iskar gas, daidaiton rabon iskar gas, da kuma tsananin sarrafa zafin wurin ajiyewa. Musamman ma, tare da inganta matakin juriyar ƙarfin lantarki na na'urar, wahalar sarrafa mahimman sigogi na epitaxial wafer ya ƙaru sosai. Bugu da ƙari, tare da ƙaruwar kauri na epitaxial Layer, yadda ake sarrafa daidaiton juriya da rage yawan lahani yayin da ake tabbatar da kauri ya zama wani babban ƙalubale. A cikin tsarin sarrafawa mai amfani da wutar lantarki, yana da mahimmanci a haɗa na'urori masu auna firikwensin da masu kunna wutar lantarki masu inganci don tabbatar da cewa ana iya daidaita sigogi daban-daban daidai kuma cikin kwanciyar hankali. A lokaci guda, inganta tsarin sarrafawa shima yana da mahimmanci. Yana buƙatar samun damar daidaita dabarun sarrafawa a ainihin lokaci bisa ga siginar amsawa don daidaitawa da canje-canje daban-daban a cikin tsarin girma na silicon carbide epitaxial.
Babban matsaloli a cikinsilicon carbide substratemasana'antu:
Lokacin Saƙo: Yuni-07-2024