Isithando sokukhulisa ikristalu siwumshini oyinhloko we-i-silicon carbideukukhula kwekristalu. Kufana nesithando sokukhulisa ikristalu se-silicon sendabuko. Isakhiwo sesithando sokukhulisa asiyinkimbinkimbi kakhulu. Sakhiwe kakhulu umzimba wesithando sokushisa, uhlelo lokushisa, indlela yokudlulisa ikhoyili, uhlelo lokuthola i-vacuum kanye nokulinganisa, uhlelo lwendlela yegesi, uhlelo lokupholisa, uhlelo lokulawula, njll. Insimu yokushisa kanye nezimo zenqubo kunquma izinkomba ezibalulekile zeikristalu ye-silicon carbidenjengekhwalithi, usayizi, ukuhanjiswa kwamandla kagesi njalo njalo.
Ngakolunye uhlangothi, izinga lokushisa ngesikhathi sokukhula kweikristalu ye-silicon carbidekuphezulu kakhulu futhi akukwazi ukubhekwa. Ngakho-ke, ubunzima obukhulu busenqubo ngokwayo. Ubunzima obukhulu buyilokhu okulandelayo:
(1) Ubunzima ekulawuleni insimu yokushisa:
Ukuqapha umgodi ovaliwe wokushisa okuphezulu kunzima futhi akulawuleki. Ngokungafani nemishini yokukhulisa ikristalu esuselwa kusisombululo se-silicon esidonsa ngqo enezinga eliphezulu lokuzenzakalela kanye nenqubo yokukhula kwekristalu ebonakala futhi elawulekayo, amakristalu e-silicon carbide akhula endaweni evaliwe endaweni yokushisa okuphezulu ngaphezu kuka-2,000℃, futhi izinga lokushisa lokukhula lidinga ukulawulwa ngokunembile ngesikhathi sokukhiqizwa, okwenza ukulawula izinga lokushisa kube nzima;
(2) Ubunzima ekulawuleni isimo sekristalu:
Ama-micropipe, ukufakwa kwe-polymorphic, ukuhlukana kanye nezinye iziphambeko zivame ukwenzeka ngesikhathi senqubo yokukhula, futhi ziyathintana futhi ziyashintshana. Ama-Micropipe (MP) angamaphutha ohlobo oludlulayo anosayizi wama-micron amaningana kuya kwamashumi ama-micron, okuyiziphambeko ezibulalayo zamadivayisi. Amakristalu angawodwa e-silicon carbide afaka izinhlobo zekristalu ezingaphezu kuka-200 ezahlukene, kodwa izakhiwo ezimbalwa zekristalu (uhlobo lwe-4H) yizinto ze-semiconductor ezidingekayo ekukhiqizweni. Ukuguqulwa kwesimo sekristalu kulula ukwenzeka ngesikhathi senqubo yokukhula, okuholela kumaphutha okufakwa kwe-polymorphic. Ngakho-ke, kuyadingeka ukulawula ngokunembile amapharamitha afana nesilinganiso se-silicon-carbon, i-gradient yokushisa kokukhula, izinga lokukhula kwekristalu, kanye nomfutho wokugeleza komoya. Ngaphezu kwalokho, kukhona i-gradient yokushisa ensimini yokushisa yokukhula kwekristalu engawodwa ye-silicon carbide, okuholela ekucindezelekeni kwangaphakathi kwemvelo kanye nokuhlukana okubangelwayo (i-basal plane dislocation BPD, i-screw dislocation TSD, i-edge dislocation TED) ngesikhathi senqubo yokukhula kwekristalu, ngaleyo ndlela kuthinte ikhwalithi kanye nokusebenza kwe-epitaxy elandelayo namadivayisi.
(3) Ukulawula okunzima kokusebenzisa izidakamizwa:
Ukungeniswa kokungcola kwangaphandle kumele kulawulwe ngokuqinile ukuze kutholakale ikristalu eqhubayo ene-doping eqondisayo;
(4) Izinga lokukhula elihamba kancane:
Izinga lokukhula kwe-silicon carbide lihamba kancane kakhulu. Izinto ze-silicon zendabuko zidinga izinsuku ezi-3 kuphela ukuze zikhule zibe yinduku yekristalu, kuyilapho izinduku zekristalu ze-silicon carbide zidinga izinsuku ezi-7. Lokhu kuholela ekusebenzeni kahle okuphansi ngokwemvelo kwe-silicon carbide kanye nomkhiqizo olinganiselwe kakhulu.
Ngakolunye uhlangothi, amapharamitha okukhula kwe-silicon carbide epitaxial adinga kakhulu, okuhlanganisa ukuqina komoya kwemishini, ukuzinza kwengcindezi yegesi ekamelweni lokusabela, ukulawulwa okunembile kwesikhathi sokungeniswa kwegesi, ukunemba kwesilinganiso segesi, kanye nokuphathwa okuqinile kwezinga lokushisa lokufakwa. Ikakhulukazi, ngokuthuthukiswa kwezinga lokumelana ne-voltage yedivayisi, ubunzima bokulawula amapharamitha ayinhloko e-epitaxial wafer bukhule kakhulu. Ngaphezu kwalokho, ngokwanda kobukhulu besendlalelo se-epitaxial, indlela yokulawula ukufana kokumelana nokunciphisa ubuningi besici ngenkathi kuqinisekiswa ukujiya kube enye inselele enkulu. Ohlelweni lokulawula olusebenzisa ugesi, kuyadingeka ukuhlanganisa izinzwa ezinembile kakhulu nama-actuator ukuqinisekisa ukuthi amapharamitha ahlukahlukene angalawulwa ngokunembile nangokuzinzile. Ngesikhathi esifanayo, ukwenza ngcono i-algorithm yokulawula nakho kubalulekile. Kudingeka ikwazi ukulungisa isu lokulawula ngesikhathi sangempela ngokuya ngesignali yempendulo ukuze ivumelane nezinguquko ezahlukahlukene enqubweni yokukhula kwe-silicon carbide epitaxial.
Izinkinga ezinkulu kui-substrate ye-silicon carbideukukhiqiza:
Isikhathi sokuthunyelwe: Juni-07-2024