Iyo crystal yekukura choto ndiyo yakakosha midziyo yesilicon carbidekukura kwekristaro. Iyo yakafanana neyechinyakare crystalline silicon giredhi crystal yekukura vira. Chimiro chevira hachina kunyanya kuoma. Iyo inonyanya kuumbwa nechoto chemoto, kupisa system, coil transmission mechanism, vacuum acquisition uye kuyerwa system, gasi nzira system, inotonhorera system, control system, etc. Iyo inopisa munda uye mamiriro ekugadzirisa anosarudza zviratidzo zvakakosha zve.silicon carbide crystalkufanana unhu, saizi, conductivity uye zvichingodaro.
Kune rumwe rutivi, tembiricha panguva yekukura kwesilicon carbide crystalyakakwirira kwazvo uye haigone kutariswa. Nokudaro, kuoma kukuru kuri mukugadzirisa pachako. Matambudziko makuru ndeaya anotevera:
(1) Kuomerwa mukudzora munda wekupisa:
Kutariswa kweiyo yakavharwa yepamusoro-tembiricha cavity yakaoma uye isingadzoreki. Yakasiyana neyakajairwa silicon-yakavakirwa mhinduro yakananga-dhonza kristaro kukura midziyo ine yakakwira dhigirii ye otomatiki uye inocherechedzwa uye inodzoreka makristasi ekukura, silicon carbide makristasi anokura munzvimbo yakavharwa munzvimbo inotonhora yepamusoro inopfuura 2,000 ℃, uye tembiricha yekukura inoda kunyatsodzorwa panguva yekugadzira, izvo zvinoita kuti kutonga kwekushisa kuve kwakaoma;
(2) Kuoma kwekristaro fomu kutonga:
Micropipes, polymorphic inclusions, dislocation uye kumwe kukanganisa kunowanzoitika panguva yekukura, uye zvinokanganisa uye kuchinjana. Micropipes (MP) ndeye-kuremara kwemhando ine saizi yemamicrons akati wandei kusvika kumakumi emamicron, ayo ari anouraya kukanganisa kwemidziyo. Silicon carbide single crystals inosanganisira anopfuura mazana maviri emhando dzekristaro dzakasiyana, asi mashoma makristasi zvimiro (4H mhando) ndiyo semiconductor zvinhu zvinodiwa pakugadzirwa. Crystal fomu shanduko iri nyore kuitika panguva yekukura, zvichikonzera kukanganisa kwepolymorphic inclusion. Naizvozvo, zvinodikanwa kunyatso kudzora ma paramita akadai sesilicon-kabhoni ratio, kukura tembiricha gradient, crystal yekukura mwero, uye kuyerera kwemhepo. Pamusoro pezvo, kune tembiricha yekushisa mumunda wekupisa wesilicon carbide imwe kristaro kukura, izvo zvinotungamira kune yekuzvarwa kushushikana kwemukati uye zvinokonzeresa dislocation (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) panguva yekukura kwekristaro, zvichikanganisa kunaka uye kushanda kweinotevera epitaxy uye zvishandiso.
(3) Zvakaoma kudzora doping:
Iko kuiswa kwekusvibiswa kwekunze kunofanirwa kunyatsodzorwa kuti uwane kristaro inofambisa ine doping inotungamira;
(4) Chimiro chekukura zvishoma:
Kukura kwesilicon carbide kunononoka. Zvechinyakare zvesilicon zvinhu zvinongoda mazuva matatu kuti zvikure kuita danda rekristaro, nepo silicon carbide crystal rods inoda mazuva manomwe. Izvi zvinotungamira kune yakadzikira yakadzika kugadzirwa kwesilicon carbide uye yakanyanya kushomeka kubuda.
Kune rimwe divi, maparamendi esilicon carbide epitaxial kukura ari kudiwa zvakanyanya, kusanganisira kusimba kwemhepo kwemidziyo, kugadzikana kwegasi kudzvanywa mukamuri yekupindura, kunyatso kudzora kwenguva yekusuma gasi, kurongeka kwechiyero chegasi, uye kutonga kwakasimba kwekushisa kwekuisa. Kunyanya, nekuvandudzwa kweiyo mudziyo wemagetsi ekupikisa level, kuomerwa kwekudzora core parameters epitaxial wafer kwakawedzera zvakanyanya. Pamusoro pezvo, nekuwedzera kwehupamhi hweiyo epitaxial layer, maitiro ekudzora kufanana kweiyo resistivity uye kuderedza density yekuremara uku uchiona kuti ukobvu hwave rimwe dambudziko guru. Mune magetsi ekudzora system, zvinodikanwa kubatanidza yakakwirira-chaiyo sensors uye actuators kuti ive nechokwadi chekuti akasiyana ma paramita anogona kurongeka uye akadzikama. Panguva imwecheteyo, iyo optimization yekutonga algorithm kwakakosha zvakare. Inoda kukwanisa kugadzirisa hurongwa hwekutonga munguva chaiyo maererano nechiratidzo chemhinduro kuti ienderane nekuchinja kwakasiyana-siyana musilicon carbide epitaxial growth process.
Matambudziko makuru musilicon carbide substratekugadzira:
Nguva yekutumira: Jun-07-2024