Chitofu chekristaro ndicho chinhu chikuru chekushandisakabhidhi yesiliconkukura kwekristaro. Yakafanana nekristaro yekristaro yemhando yekristaro yesilicon. Chimiro chekiristaro hachina kuoma zvakanyanya. Chinonyanya kuumbwa nemuviri wekiristaro, sisitimu yekudziisa, nzira yekutumira coil, sisitimu yekutora vacuum uye yekuyera, sisitimu yenzira yegesi, sisitimu yekutonhodza, sisitimu yekudzora, nezvimwewo. Munda wekupisa nemamiriro ekushanda zvinosarudza zviratidzo zvikuru zvesilicon carbide kristarosemhando, saizi, conductivity nezvimwewo.
Kune rumwe rutivi, tembiricha panguva yekukura kwesilicon carbide kristaroyakanyanya kukwira uye haigone kutariswa. Nokudaro, dambudziko guru riri mukuita kwacho pachako. Matambudziko makuru ndeaya anotevera:
(1) Kuoma kwekudzora simba rekupisa:
Kuongororwa kwenzvimbo yakavharwa ine tembiricha yepamusoro kwakaoma uye hakudzoreki. Kusiyana nemidziyo yekukura kwekristaro yakavakirwa pasilicon ine otomatiki yepamusoro uye maitiro ekukura kwekristaro anoonekwa uye anodzorwa, makristaro esilicon carbide anokura munzvimbo yakavharwa munzvimbo ine tembiricha yepamusoro pamusoro pe2,000℃, uye tembiricha yekukura inofanira kudzorwa nemazvo panguva yekugadzira, izvo zvinoita kuti kudzora tembiricha kuve kwakaoma;
(2) Kuoma kwekudzora chimiro chekristaro:
Ma micropipes, polymorphic inclusions, dislocations nezvimwe zvikanganiso zvinowanzoitika panguva yekukura, uye zvinokanganisa uye zvinoshanduka. Ma micropipes (MP) zvikanganiso zvemhando yepamusoro zvine saizi yema microns akati wandei kusvika kumakumi ema microns, izvo zvinouraya zvikanganiso zvemidziyo. Silicon carbide single crystals inosanganisira anopfuura 200 akasiyana ma crystal forms, asi mashoma ma crystal structures (4H type) ndiwo ma semiconductor materials anodiwa pakugadzirwa. Kuchinja kwe crystal form kuri nyore kuitika panguva yekukura, zvichikonzera polymorphic inclusion defects. Nokudaro, zvakakosha kudzora nemazvo ma parameter akadai se silicon-carbon ratio, kukura kwekupisa gradient, crystal growth rate, uye air flow pressure. Pamusoro pezvo, kune tembiricha gradient mumunda wekupisa we silicon carbide single crystal growth, izvo zvinotungamira kune native internal stress uye dislocations dzinozoitika (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) panguva yekukura kwe crystal, nokudaro zvichikanganisa mhando nekushanda kwe epitaxy nemidziyo inotevera.
(3) Kudzora kwakaoma kushandisa zvinodhaka:
Kuiswa kwetsvina yekunze kunofanirwa kudzorwa zvakasimba kuti pave nekristaro inofambisa mhepo ine doping inotungamira;
(4) Kukura kunonoka:
Kukura kwesilicon carbide kunononoka zvikuru. Zvinhu zvechinyakare zvesilicon zvinongoda mazuva matatu chete kuti zvikure kuita crystal rod, nepo silicon carbide crystal rods dzichida mazuva manomwe. Izvi zvinoita kuti silicon carbide ishande zvakanaka uye ibudise zvishoma.
Kune rumwe rutivi, maparamita ekukura kwesilicon carbide epitaxial anoda zvakanyanya, anosanganisira kusimba kwemhepo yemidziyo, kugadzikana kwekumanikidzwa kwegasi mukamuri re reaction, kudzora kwakaringana nguva yekupinza gasi, kururama kwehuwandu hwegasi, uye kutonga kwakasimba kwekupisa kwekuisa. Kunyanya, nekuvandudzwa kwedanho rekudzivirira voltage yemudziyo, kuoma kwekudzora maparamita epakati epitaxial wafer kwakawedzera zvakanyanya. Pamusoro pezvo, nekuwedzera kweukobvu hweepitaxial layer, maitiro ekudzora kufanana kweresistivity uye kuderedza defect density uku uchivimbisa kuti ukobvu hwave rimwe dambudziko guru. Musystem yekudzora ine magetsi, zvakakosha kubatanidza ma sensors nema actuator akanyanya kunyatsojeka kuti ive nechokwadi chekuti maparamita akasiyana anogona kudzorwa nemazvo uye zvakagadzikana. Panguva imwe chete, kugadzirisa algorithm yekudzora kwakakoshawo. Inofanirwa kukwanisa kugadzirisa nzira yekudzora munguva chaiyo zvichienderana nechiratidzo chemhinduro kuti ichinje kune shanduko dzakasiyana mumaitiro ekukura kwesilicon carbide epitaxial.
Matambudziko makuru musilicon carbide substratekugadzira:
Nguva yekutumira: Chikumi-07-2024