Iziko lokukhula kwekristale sesona sixhobo singundoqoi-silicon carbideukukhula kwekristale. Iyafana neziko lokukhula kwekristale ye-silicon yebakala. Isakhiwo sesithando somlilo asinzima kakhulu. Ikakhulu iqulunqwe ngumzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokuhambisa ikhoyili, ukufunyanwa kwevacuum kunye nenkqubo yokulinganisa, inkqubo yendlela yegesi, inkqubo yokupholisa, inkqubo yokulawula, njl. njl.ikristale ye-silicon carbidenjengomgangatho, ubungakanani, conductivity njalo njalo.
Kwelinye icala, iqondo lobushushu ngexesha lokukhulaikristale ye-silicon carbideiphezulu kakhulu kwaye ayinakujongwa. Ngoko ke, ubunzima obuphambili bulele kwinkqubo ngokwayo. Obona bunzima buphambili bulandelayo:
(1) Ubunzima kulawulo lwentsimi ye-thermal:
Ukubekwa esweni kwendawo evaliweyo yobushushu obuphezulu kunzima kwaye akulawuleki. Ukwahluka kwisisombululo se-silicon-based based solution-direct-pull crystal ukukhula kwezixhobo kunye neqondo eliphezulu lokuzenzekelayo kunye nenkqubo yokukhula kwekristale ebonakalayo kunye nokulawulwayo, i-silicon carbide crystals ikhula kwindawo evaliweyo kwindawo yokushisa ephezulu ngaphezu kwe-2,000 ℃, kwaye ubushushu bokukhula bufuna ukulawulwa ngokuchanekileyo ngexesha lemveliso, eyenza ukulawula ukushisa kube nzima;
(2) Ubunzima kulawulo lwefom yekristale:
I-Micropipes, i-polymorphic inclusions, i-dislocations kunye nezinye iziphene zivame ukwenzeka ngexesha lokukhula, kwaye zichaphazela kwaye ziguquke. Imibhobho emibhobho (MP) ziziphene ezinobungakanani beemicrons ezininzi ukuya kumashumi eemicrons, eziziziphene ezibulalayo kwizixhobo. I-silicon carbide i-crystals enye iquka ngaphezu kwe-200 iifom ze-crystal ezahlukeneyo, kodwa kuphela izakhiwo ezimbalwa ze-crystal (uhlobo lwe-4H) zizinto ze-semiconductor ezifunekayo kwimveliso. Ukuguqulwa kwefom ye-Crystal kulula ukwenzeka ngexesha lenkqubo yokukhula, okukhokelela kwiziphene zokubandakanywa kwe-polymorphic. Ke ngoko, kuyafuneka ukulawula ngokuchanekileyo iiparamitha ezinje ngesilicon-carbon ratio, ukukhula kweqondo lobushushu, izinga lokukhula kwekristale, kunye noxinzelelo lokuhamba komoya. Ukongezelela, kukho i-gradient yokushisa kwintsimi ye-thermal ye-silicon carbide ukukhula kwekristale enye, okukhokelela ekuxinezelekeni kwangaphakathi kwangaphakathi kunye nokukhutshwa okubangelwayo (i-basal plane dislocation BPD, i-screw dislocation TSD, i-edge dislocation TED) ngexesha lenkqubo yokukhula kwekristale, ngaloo ndlela ichaphazela umgangatho kunye nokusebenza kwe-epitaxy elandelayo kunye nezixhobo.
(3) Ulawulo lwedoping olunzima:
Ukuqaliswa kokungcola kwangaphandle kufuneka kulawulwe ngokungqongqo ukufumana i-crystal conductive kunye ne-doping ye-directional;
(4) Izinga lokukhula okucothayo:
Izinga lokukhula kwesilicon carbide licotha kakhulu. Izinto ze-silicon zemveli zifuna kuphela iintsuku ezi-3 ukuze zikhule zibe yintonga ye-crystal, ngelixa i-silicon carbide crystal rods idinga iintsuku ezi-7. Oku kukhokelela ekusebenzeni okusezantsi kwemveliso yesilicon carbide kunye nemveliso encinci kakhulu.
Kwelinye icala, iiparamitha ze-silicon carbide epitaxial ukukhula zifuna kakhulu, kubandakanywa nokuqina komoya kwezixhobo, ukuzinza koxinzelelo lwerhasi kwigumbi lokusabela, ulawulo oluchanekileyo lwexesha lokungeniswa kwegesi, ukuchaneka komlinganiselo werhasi, kunye nolawulo olungqongqo lobushushu bokubekwa. Ngokukodwa, ngokuphuculwa kwenqanaba lokumelana nombane wesixhobo, ubunzima bokulawula iiparamitha eziphambili ze-epitaxial wafer buye landa kakhulu. Ukongezelela, ngokunyuka kobunzima be-epitaxial layer, indlela yokulawula ukufana kwe-resistantivity kunye nokunciphisa ubuninzi besiphako ngelixa uqinisekisa ukuba ubukhulu bube ngomnye umngeni omkhulu. Kwinkqubo yokulawula umbane, kuyimfuneko ukudibanisa i-high-precision sensors kunye ne-actuators ukuqinisekisa ukuba iiparitha ezahlukeneyo zinokuchaneka kwaye zilawulwe ngokuzinzileyo. Kwangaxeshanye, ukwenziwa ngcono kwe-algorithm yolawulo nako kubalulekile. Idinga ukukwazi ukulungelelanisa isicwangciso sokulawula ngexesha langempela ngokuhambelana nomqondiso wempendulo ukulungelelanisa utshintsho oluhlukeneyo kwinkqubo yokukhula kwe-silicon carbide epitaxial.
Ubunzima obuphambili kwii-silicon carbide substrateukuvelisa:
Ixesha lokuposa: Jun-07-2024