Isithando sokukhulisa iikristale sisixhobo esiphambilii-silicon carbideukukhula kwekristale. Kufana nesithando somlilo sokukhulisa ikristale se-silicon esiqhelekileyo. Ulwakhiwo lwesithando somlilo alunzima kakhulu. Ngokuyintloko senziwe ngumzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokudlulisa i-coil, inkqubo yokufumana i-vacuum kunye nokulinganisa, inkqubo yendlela yegesi, inkqubo yokupholisa, inkqubo yolawulo, njl. Intsimi yobushushu kunye neemeko zenkqubo zimisela izalathisi eziphambili zeikristale ye-silicon carbidenjengomgangatho, ubungakanani, ukuhanjiswa kwamandla njalo njalo.
Kwelinye icala, ubushushu ngexesha lokukhulaikristale ye-silicon carbideiphezulu kakhulu kwaye ayinakujongwa. Ke ngoko, ubunzima obuphambili bukwinkqubo ngokwayo. Iingxaki eziphambili zezi zilandelayo:
(1) Ubunzima kulawulo lobushushu:
Ukubekwa esweni komngxuma ovaliweyo wobushushu obuphezulu kunzima kwaye akunakulawuleka. Ngokungafaniyo nezixhobo zokukhulisa iikristale ezisekelwe kwisisombululo se-silicon esitsalwa ngqo esinezinga eliphezulu lokuzenzekela kunye nenkqubo yokukhula kweekristale enokubonwa nelawulwayo, iikristale ze-silicon carbide zikhula kwindawo evaliweyo kwindawo enobushushu obuphezulu ngaphezu kwe-2,000℃, kwaye ubushushu bokukhula kufuneka bulawulwe ngokuchanekileyo ngexesha lokuvelisa, nto leyo eyenza kube nzima ukulawula ubushushu;
(2) Ubunzima ekulawuleni imo yekristale:
IiMicropipes, i-polymorphic inclusions, i-dislocations kunye nezinye iziphene zinokwenzeka ngexesha lenkqubo yokukhula, kwaye ziyachaphazela kwaye ziguqukele kwenye nenye. IiMicropipes (MP) ziziphene zohlobo oluhambayo ezinobukhulu beemicrons ezininzi ukuya kumashumi eemicrons, eziziiphene ezibulalayo zezixhobo. Iikristale zeSilicon carbide single ziquka iifom zekristale ezahlukeneyo ezingaphezu kwama-200, kodwa zimbalwa izakhiwo zekristale (uhlobo lwe-4H) ezizixhobo ze-semiconductor ezifunekayo kwimveliso. Ukuguqulwa kwesimo sekristale kulula ukwenzeka ngexesha lenkqubo yokukhula, okubangela iziphene zokufakwa kwepolymorphic. Ke ngoko, kuyimfuneko ukulawula ngokuchanekileyo iiparameters ezifana nomlinganiselo wesilicon-carbon, i-gradient yobushushu bokukhula, isantya sokukhula kwekristale, kunye noxinzelelo lokuhamba komoya. Ukongeza, kukho i-gradient yobushushu kwintsimi yobushushu yokukhula kwekristale yesilicon carbide single, ekhokelela kuxinzelelo lwangaphakathi lwendalo kunye ne-dislocations ebangelwayo (i-basal plane dislocation BPD, i-screw dislocation TSD, i-edge dislocation TED) ngexesha lenkqubo yokukhula kwekristale, ngaloo ndlela ichaphazela umgangatho kunye nokusebenza kwe-epitaxy elandelayo kunye nezixhobo.
(3) Ulawulo olunzima lokusebenzisa iziyobisi:
Ukungeniswa kokungcola kwangaphandle kufuneka kulawulwe ngokungqongqo ukuze kufunyanwe ikristale eqhubayo ene-doping eqondisayo;
(4) Izinga lokukhula elicothayo:
Izinga lokukhula kwe-silicon carbide licotha kakhulu. Izinto ze-silicon zemveli zifuna iintsuku ezi-3 kuphela ukuze zikhule zibe yi-crystal rod, ngelixa ii-silicon carbide crystal rods zifuna iintsuku ezi-7. Oku kukhokelela ekusebenzeni okuphantsi ngokwendalo kwe-silicon carbide kunye nemveliso encinci kakhulu.
Kwelinye icala, iiparameter zokukhula kwe-silicon carbide epitaxial zifuna kakhulu, kubandakanya ukuqina komoya kwezixhobo, ukuzinza koxinzelelo lwegesi kwigumbi lokusabela, ulawulo oluchanekileyo lwexesha lokungeniswa kwegesi, ukuchaneka komlinganiselo wegesi, kunye nolawulo oluqinileyo lobushushu bokubekwa. Ngokukodwa, ngokuphuculwa kwenqanaba lokumelana nombane wesixhobo, ubunzima bokulawula iiparameter eziphambili ze-epitaxial wafer bunyuke kakhulu. Ukongeza, ngokwanda kobukhulu bomaleko we-epitaxial, indlela yokulawula ukufana kokumelana kunye nokunciphisa uxinano lwesiphene ngelixa kuqinisekiswa ukuba ubukhulu bube ngomnye umngeni omkhulu. Kwinkqubo yolawulo olusebenzisa umbane, kuyimfuneko ukudibanisa iisensors kunye nee-actuators ezichanekileyo ukuqinisekisa ukuba iiparameter ezahlukeneyo zinokulawulwa ngokuchanekileyo nangokuzinzileyo. Kwangaxeshanye, ukulungiswa kwe-algorithm yolawulo nako kubalulekile. Kufuneka ikwazi ukulungisa icebo lolawulo ngexesha langempela ngokwesignali yempendulo ukuze ivumelane notshintsho olwahlukeneyo kwinkqubo yokukhula kwe-silicon carbide epitaxial.
Iingxaki eziphambili kwiisiseko se-silicon carbideimveliso:
Ixesha leposi: Juni-07-2024