Intengo encishisiwe ye-GaN-Baseddepitaxial kuma-Sic Substrates angu-4′′

Intengo encishisiwe I-GaN-Baseddepitaxial ku-Sic Substrates 4′′ Isithombe Esifakiwe

Incazelo emfushane:

Izithwali ze-wafer ezisetshenziswa ekucubungulweni kokukhula kwe-epitaxial kumele zibekezelele amazinga okushisa aphezulu kanye nokuhlanzwa kwamakhemikhali okunzima. Ama-susceptor e-CoorsTek Clear Carbon™ aklanyelwe ngqo lezi zinhlelo zokusebenza zemishini ye-epitaxy ezidingayo. Ukwakhiwa kwawo kwe-graphite ehlanganiswe ne-silicon carbide (SiC) ehlanzekile kakhulu kunikeza ukumelana nokushisa okuphezulu, ngisho nokufana kokushisa ukuze kube nobukhulu obuhambisanayo kanye nokumelana kwamakhemikhali, kanye nokumelana kwamakhemikhali okuhlala isikhathi eside. I-Fine SiC crystal coating inikeza indawo ehlanzekile, ebushelelezi, ebalulekile ekuphathweni njengoba ama-wafer ahlanzekile ethinta i-susceptor ezindaweni eziningi kuyo yonke indawo yawo.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Manje sesinabasebenzi abanekhono eliphezulu lokubhekana nemibuzo evela kubathengi. Umgomo wethu “ukugcwaliseka kwamakhasimende ngomkhiqizo noma isevisi yethu okuhle kakhulu, intengo yokuthengisa kanye nensizakalo yabasebenzi bethu” futhi sijabulele ukuthandwa okukhulu phakathi kwamakhasimende. Njengoba sinezimboni eziningi, singanikeza intengo ehlukahlukene ye-GaN-Basedepitaxial ku-Sic Substrates 4′′, Siyakwamukela ngemfudumalo osomabhizinisi abancane abavela kuzo zonke izindlela zokuphila, sithemba ukusungula ibhizinisi elinobungane nelibambisanayo, ukuxhumana nawe futhi sifinyelele umgomo ozuzisa bonke.
Manje sinabasebenzi abanekhono eliphezulu lokubhekana nemibuzo evela kubathengi. Umgomo wethu “ukwaneliseka kwabathengi okungu-100% ngomkhiqizo noma isevisi yethu okuhle kakhulu, intengo yokuthengisa kanye nensizakalo yabasebenzi bethu” futhi sijabulele ukuthandwa okukhulu phakathi kwamakhasimende. Njengoba sinezimboni eziningi, singanikeza izinhlobo ezahlukene zemikhiqizo yethu.Izingxenyana ze-China GaN kanye nefilimu ye-GaN, Silangazelela ngobuqotho ukubambisana namakhasimende emhlabeni wonke. Sikholelwa ukuthi singakwanelisa ngemikhiqizo yethu esezingeni eliphezulu kanye nensizakalo ephelele. Siphinde samukele ngemfudumalo amakhasimende ukuthi avakashele inkampani yethu futhi athenge imikhiqizo yethu.

Izithwali ze-graphite ze-SiC zokumboza i-MOCVD Wafer

Zonke izisusa zethu zenziwe nge-graphite enamandla amakhulu e-isostatic. Zuza ekuhlanzekeni okuphezulu kwama-graphite ethu - aklanyelwe ikakhulukazi izinqubo eziyinselele njenge-epitaxy, ukukhulisa ikristalu, ukufakelwa kwe-ion kanye nokuqoshwa kwe-plasma, kanye nokukhiqizwa kwama-chip e-LED.

Incazelo Yomkhiqizo
Ukufakwa kwe-SiC kwe-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye ehlanzekile kakhulu kanye nokumelana nomoya oxidating.
I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Isembozo singasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

Inhlanganisela

Izithwali ze-graphite ze-SiC zokumboza i-MOCVD Wafer

Izinzuzo ezikhethekile zama-susceptor ethu e-graphite ambozwe yi-SiC zifaka phakathi ubumsulwa obuphezulu kakhulu, ukugqoka okufanayo kanye nokuphila kahle kwenkonzo. Futhi anokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

Sigcina ukubekezelelana okusondelene kakhulu lapho sisebenzisa i-SiC coating, sisebenzisa imishini enembile kakhulu ukuqinisekisa iphrofayili efanayo ye-susceptor. Siphinde sikhiqize izinto ezinezakhiwo zokumelana kagesi ezifanele ukusetshenziswa ezinhlelweni ezifudunyezwayo. Zonke izingxenye eziqediwe ziza nesitifiketi sokuthobela imithetho esihlanzekile nesinobukhulu.

Isicelo:

Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
· Ingasetshenziswa ngaphansi kwe-Oxidizing AtmosphereIzakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

Manje sesinabasebenzi abanekhono eliphezulu lokubhekana nemibuzo evela kubathengi. Umgomo wethu “ukugcwaliseka kwamakhasimende ngomkhiqizo noma isevisi yethu okuhle kakhulu, intengo yokuthengisa kanye nensizakalo yabasebenzi bethu” futhi sijabulele ukuthandwa okukhulu phakathi kwamakhasimende. Njengoba sinezimboni eziningi, singanikeza intengo ehlukahlukene ye-GaN-Basedepitaxial ku-Sic Substrates 4′′, Siyakwamukela ngemfudumalo osomabhizinisi abancane abavela kuzo zonke izindlela zokuphila, sithemba ukusungula ibhizinisi elinobungane nelibambisanayo, ukuxhumana nawe futhi sifinyelele umgomo ozuzisa bonke.
Intengo encishisiweIzingxenyana ze-China GaN kanye nefilimu ye-GaN, Silangazelela ngobuqotho ukubambisana namakhasimende emhlabeni wonke. Sikholelwa ukuthi singakwanelisa ngemikhiqizo yethu esezingeni eliphezulu kanye nensizakalo ephelele. Siphinde samukele ngemfudumalo amakhasimende ukuthi avakashele inkampani yethu futhi athenge imikhiqizo yethu.