Mafi ƙarancin Farashi ga China Babban Ingancin Injin Gilashi na Musamman don Injin Gilashi na Silicon Ingot na Polycrystalline

Mafi ƙarancin Farashi ga China Babban Inganci Na Musamman Na Zane-zanen Graphite Don Polycrystalline Silicon Ingot Furnace Hotunan da aka Nuna

Takaitaccen Bayani:

Tsarkaka < 5ppm
‣ Daidaito mai kyau tsakanin shan kwayoyi
‣ Babban yawa da mannewa
‣ Kyakkyawan juriya ga gurɓatawa da kuma juriya ga carbon

‣ Ƙirƙirar ƙwararru
‣ Takaitaccen lokaci na gabatarwa
‣ Samar da kayayyaki mai dorewa
‣ Kula da inganci da ci gaba da haɓakawa

Epitaxy na GaN akan Sapphire(RGB/Mini/Micro LED);Epitaxy na GaN akan Si Substrate(UVC);Epitaxy na GaN akan Si Substrate(Na'urar Lantarki);Epitaxy na Si akan Si Substrate(Da'irar da aka haɗa);Epitaxy na SiC akan SiC Substrate(Substrate);Epitaxy na InP akan InP

Aika mana imel Sauke shi azaman PDF

Cikakken Bayani game da Samfurin

Alamun Samfura

Muna ci gaba da haɓakawa da inganta mafita da ayyukanmu. A lokaci guda, muna aiki tukuru don yin bincike da haɓakawa don Mafi ƙarancin Farashi don China Babban Injin Hita Graphite na Musamman don Polycrystalline Silicon Ingot Furnace, Kamfaninmu ya girma cikin sauri da shahara saboda cikakken sadaukarwarsa ga masana'antu masu inganci, babban farashin kayayyaki da kuma mai ba da sabis na abokin ciniki mai ban mamaki.
Muna ci gaba da ci gaba da haɓakawa da inganta hanyoyin magance matsalolinmu da ayyukanmu. A lokaci guda, muna aiki tukuru don yin bincike da haɓakawa donTanderun Dumama Graphite na China, Filin Zafin GraphiteSai dai don cimma ingancin samfurin don biyan buƙatun abokin ciniki, duk samfuranmu da mafita an duba su sosai kafin jigilar su. Kullum muna tunanin tambayar da ke gefen abokan ciniki, saboda kai ne ka ci nasara, mu ne ka ci nasara!

2022 MOCVD Susceptor mai inganci Saya akan layi a China

Yawa Mai Bayyana:	1.85 g/cm3
Juriyar Lantarki:	11 μΩm
Ƙarfin Lankwasawa:	49 MPa (500kgf/cm2)
Taurin bakin teku:	58
Toka:	<5ppm
Tsarin kwararar zafi:	116 W/mK (100 kcal/mhr-℃)

Wafer yanki ne na silicon mai kauri kusan milimita 1 wanda ke da faɗin fili mai faɗi sosai godiya ga hanyoyin da ke da matuƙar wahala a fannin fasaha. Amfanin da za a yi daga baya yana ƙayyade irin tsarin girma lu'ulu'u da ya kamata a yi amfani da shi. A cikin tsarin Czochralski, misali, ana narkar da lu'ulu'u mai siffar polycrystal sannan a tsoma lu'ulu'u mai siffar fensir a cikin lu'ulu'u mai narkewa. Daga nan sai a juya lu'ulu'u na iri a hankali a ja shi sama. Wani babban lu'ulu'u mai nauyi, monocrystal, ya haifar. Yana yiwuwa a zaɓi halayen lantarki na monocrystal ta hanyar ƙara ƙananan raka'a na dopants masu tsabta. Ana shafa lu'ulu'u daidai da ƙayyadaddun buƙatun abokin ciniki sannan a goge su a yanka su yanka. Bayan ƙarin matakai daban-daban na samarwa, abokin ciniki yana karɓar wafers ɗinsa da aka ƙayyade a cikin marufi na musamman, wanda ke ba abokin ciniki damar amfani da wafer nan da nan a cikin layin samarwa.

Wafer yana buƙatar wucewa ta matakai da dama kafin ya shirya don amfani a cikin na'urorin lantarki. Wani muhimmin tsari shine silicon epitaxy, inda ake ɗaukar wafers ɗin akan susceptors na graphite. Halaye da ingancin susceptors suna da tasiri mai mahimmanci akan ingancin layin epitaxial na wafer.

Ga matakan adana fim ɗin siriri kamar epitaxy ko MOCVD, VET tana samar da kayan aikin graphite masu tsarki waɗanda ake amfani da su don tallafawa substrates ko "wafers". A cikin aikin, wannan kayan aiki, masu hana epitaxy ko dandamalin tauraron dan adam na MOCVD, ana fara amfani da su ne a yanayin adanawa:

Babban zafin jiki.
Babban injin tsabtace iska.
Amfani da iskar gas mai ƙarfi.
Babu gurɓatawa, rashin barewa.
Juriya ga ƙarfi mai ƙarfi yayin ayyukan tsaftacewa