Igiciro gito cyane cy'ubushyuhe bwa Graphite bwo mu Bushinwa bufite ireme ryo hejuru bwo gukoresha ifuru ya Polycrystalline Silicon Ingot

Igiciro gito cyane cy'Ubushinwa gishyushya Graphite nziza cyane ku ifuru ya Polycrystalline Silicon Ingot Ishusho yagaragaye

Ibisobanuro bigufi:

Isuku < 5ppm
‣ Uburyo bwiza bwo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge
‣ Ubucucike bwinshi n'ubufatanye
‣ Irwanya kwangirika no kurwanya karubone neza

‣ Guhindura imiterere y'umwuga
‣ Igihe gito cyo kwishyura
‣ Itangwa ry'ibikoresho rihoraho
‣ Kugenzura ubuziranenge no kunoza imikorere

Epitaxy ya GaN kuri Safiro(RGB/Mini/Micro LED);Epitaxy ya GaN kuri Si Substrate(UVC);Epitaxy ya GaN kuri Si Substrate(Igikoresho cy'ikoranabuhanga);Epitaxy ya Si kuri Si Substrate(Urugendo rw'itumanaho ruhujwe);Epitaxy ya SiC kuri SiC Substrate(Icyambu cy'ubutaka);Epitaxy ya InP kuri InP

Ohereza imeri kuri twe Kuramo nka PDF

Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Dukomeje kongera no kunoza serivisi zacu. Muri icyo gihe, dukora ubushakashatsi no kunoza igiciro gito cyane cy’ubushinwa gishyushya ubushyuhe bwa Silicon Ingot Furnace, ikigo cyacu cyarushijeho gukura no gukundwa bitewe n’ubwitange bwacyo mu gukora ibikoresho byiza, igiciro kinini cy’ibicuruzwa ndetse n’abakiriya bacu beza cyane.
Dukomeje kunoza no kunoza ibisubizo na serivisi zacu. Muri icyo gihe, dukora ubushakashatsi no kunozaIgikoresho cyo gushyushya cya Graphite mu Bushinwa, Umurima w'ubushyuhe wa Grafiti, Kugira ngo ibicuruzwa byacu byose bigenzurwe neza kugira ngo bihuze n'ibyo abakiriya bakeneye, ibicuruzwa byacu byose n'ibisubizo byacu byagenzuwe neza mbere yo koherezwa. Buri gihe dutekereza ku kibazo kiri ku ruhande rw'abakiriya, kuko utsinze, natwe turatsinda!

Imodoka yo mu bwoko bwa MOCVD Susceptor yo mu rwego rwo hejuru ya 2022 igura kuri interineti mu Bushinwa

Ubucucike bugaragara:	1.85 g/cm3
Ubushobozi bwo guhangana n'amashanyarazi:	11 μΩm
Ingufu zo Kongera Uburemere:	49 MPa (500kgf/cm2)
Ubukomere bw'Inkombe:	58
Ivu:	<5ppm
Ubushobozi bwo gutwara ubushyuhe:	116 W/mK (100 kcal/mhr-℃)

Agace k'umugati ni agace ka silikoni gafite ubugari bwa milimetero imwe, gafite ubuso burambuye cyane bitewe n'uburyo busaba imbaraga nyinshi mu by'ikoranabuhanga. Gukoresha nyuma bizagena uburyo bwo guhinga kristu bugomba gukoreshwa. Urugero, muri gahunda ya Czochralski, silikoni ya polycrystalline irashongeshwa maze kristu y'imbuto ntoya cyane ishyirwa muri silikoni yashongeshejwe. kristu y'imbuto irazunguruka hanyuma ikazamuka buhoro buhoro. Ibara riremereye cyane, monocrystal, riravamo. Birashoboka guhitamo imiterere y'amashanyarazi ya monocrystal wongeyeho uduce duto tw'udupira twinshi. Udupira duto duto duto tw'udupira twinshi. Udupira duto duto duto duto tw'udupira tw'umugati hanyuma tugacibwamo uduce duto. Nyuma y'intambwe zitandukanye zo gukora, umukiriya ahabwa utugati twayo twabigenewe mu ipaki yihariye, bituma umukiriya ashobora gukoresha ako kanya mu murongo wayo wo gukora.

Agace k'umugati gagomba kunyuramo intambwe nyinshi mbere yuko gakoreshwa mu bikoresho by'ikoranabuhanga. Uburyo bumwe bw'ingenzi ni silicon epitaxy, aho utu duce dutwarwa ku duce twa grafiti. Imiterere n'ubwiza bw'utu duce bigira ingaruka zikomeye ku bwiza bw'urwego rwa epitaxial rwa wafer.

Ku bijyanye no gushyiramo filime ntoya nka epitaxy cyangwa MOCVD, VET itanga ibikoresho bya grafitite bikoreshwa mu gushyigikira substrates cyangwa "wafers". Mu by'ingenzi by'iyi gahunda, ibi bikoresho, epitaxy susceptors cyangwa satellite platforms za MOCVD, bibanza gushyirwa mu bidukikije:

Ubushyuhe buri hejuru.
Umwotsi mwinshi uvamo umwuka.
Gukoresha imyuka itera imbaraga.
Nta kwanduzwa cyangwa ngo habeho gushishwa.
Ubudahangarwa ku aside ikomeye mu gihe cyo gusukura