Ixabiso eliphantsi kakhulu le-China High Quality Graphite Heater eyenzelwe wena kwi-Polycrystalline Silicon Ingot Furnace

Ixabiso eliphantsi kakhulu le-Chinese High Quality Graphite Heater eyenzelwe wena kwi-Polycrystalline Silicon Ingot Furnace Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ubumsulwa < 5ppm
‣ Ukufana okuhle kwe-doping
‣ Uxinano oluphezulu kunye nokunamathela
‣ Iyamelana kakuhle nokubola kunye nokumelana nekhabhoni

‣ Ukwenziwa ngokwezifiso kobungcali
‣ Ixesha elifutshane lokufumana umvuzo
‣ Ubonelelo oluzinzileyo
‣ Ulawulo lomgangatho kunye nophuculo oluqhubekayo

I-Epitaxy yeGaN kwiSapphire(I-RGB/I-Mini/I-Micro LED);I-Epitaxy yeGaN kwiSi Substrate(i-UVC);I-Epitaxy yeGaN kwiSi Substrate(Isixhobo se-elektroniki);I-Epitaxy ye-Si kwi-Si Substrate(Isekethe edibeneyo);I-Epitaxy ye-SiC kwi-SiC Substrate(Isiseko);I-Epitaxy ye-InP kwi-InP

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Siyaqhubeka nokwandisa nokuphucula izisombululo zethu kunye nenkonzo. Kwangaxeshanye, sisebenza ngokukhutheleyo ukwenza uphando kunye nokuphucula ixabiso eliphantsi le-Chinese High Quality Graphite Heater eyenzelwe wena kwi-Polycrystalline Silicon Ingot Furnace, ishishini lethu lakhula ngokukhawuleza ngobukhulu kunye nokuthandwa ngenxa yokuzinikela kwalo ngokupheleleyo kwimveliso ekumgangatho ophezulu, ixabiso eliphezulu leemveliso kunye nomboneleli wabathengi omangalisayo.
Siyaqhubeka nokwandisa nokuphucula izisombululo zethu kunye nenkonzo yethu. Kwangaxeshanye, sisebenza ngenkuthalo ukwenza uphando nokuphuculaIsithando sobushushu seGraphite saseTshayina, Intsimi yobushushu yeGraphite, Kuphela ngenxa yokufezekisa imveliso esemgangathweni ukuhlangabezana neemfuno zabathengi, zonke iimveliso zethu kunye nezisombululo zethu zihlolwe ngokungqongqo ngaphambi kokuba zithunyelwe. Sisoloko sicinga ngombuzo kwicala labathengi, kuba uyaphumelela, thina siyaphumelela!

I-MOCVD Susceptor esemgangathweni ophezulu ka-2022 Thenga kwi-intanethi eTshayina

Ubuninzi Obubonakalayo:	1.85 g/cm3
Ukumelana nombane:	11 μΩm
Amandla okuGuquka:	I-49 MPa (500kgf/cm2)
Ukuqina koLwandle:	58
Uthuthu:	<5ppm
Ukuqhuba kwe-Thermal:	116 W/mK (100 kcal/mhr-℃)

I-wafer sisilayi se-silicon esimalunga ne-1 millimeter ubukhulu esinomphezulu othe tyaba kakhulu ngenxa yeenkqubo ezifuna kakhulu ubuchwepheshe. Ukusetyenziswa okulandelayo kumisela ukuba yeyiphi inkqubo yokukhulisa i-crystal ekufuneka isetyenziswe. Kwinkqubo yeCzochralski, umzekelo, i-polycrystalline silicon iyanyibilika kwaye i-crystal yembewu ebhityileyo ifakwa kwi-silicon enyibilikisiweyo. I-crystal yembewu emva koko iyajikeleziswa kwaye itsalwe kancinci phezulu. I-colossus enzima kakhulu, i-monocrystal, iphumela. Kunokwenzeka ukukhetha iimpawu zombane ze-monocrystal ngokongeza iiyunithi ezincinci zee-dopants ezicocekileyo kakhulu. Iikristale ziyaxutywa ngokuhambelana neenkcukacha zomthengi kwaye emva koko zicoliwe kwaye zinqunyulwe zibe ziingceba. Emva kwamanyathelo ahlukeneyo okuvelisa, umthengi ufumana ii-wafers zakhe ezichaziweyo kwiphakheji ekhethekileyo, evumela umthengi ukuba asebenzise i-wafer ngoko nangoko kumgca wayo wemveliso.

I-wafer kufuneka idlule amanyathelo aliqela ngaphambi kokuba ilungele ukusetyenziswa kwizixhobo ze-elektroniki. Inkqubo enye ebalulekileyo yi-silicon epitaxy, apho ii-wafer zithwalwa kwi-graphite susceptors. Iimpawu kunye nomgangatho wee-susceptors zinefuthe elibalulekileyo kumgangatho womaleko we-epitaxial we-wafer.

Kwizigaba zokufakwa kwefilimu ezincinci ezifana ne-epitaxy okanye i-MOCVD, i-VET inikezela ngezixhobo ze-graphite ezicocekileyo kakhulu ezisetyenziselwa ukuxhasa ii-substrates okanye "ii-wafers". Eyona nto iphambili kule nkqubo, ezi zixhobo, ii-epitaxy susceptors okanye iiplatifomu zesathelayithi ze-MOCVD, ziqala zibekwe kwindawo yokufakwa kwefilimu:

Ubushushu obuphezulu.
I-vacuum ephezulu.
Ukusetyenziswa kwezinto ezibangela igesi ezinamandla.
Akukho kungcoliswa, akukho kuxobuka.
Ukuxhathisa ii-asidi ezinamandla ngexesha lokucoca