Qiimaha ugu hooseeya ee Shiinaha Tayada Sare ee Kuleyliyaha Graphite ee Loogu Talagalay Foornada Silicon Ingot Polycrystalline

Sharaxaad Gaaban:

Nadiifnimo < 5ppm
‣ Midaysanaan wanaagsan oo ku saabsan isticmaalka daawada
‣ Cufnaan iyo dhegdheg sare
‣ Ka-hortagga daxalka iyo iska caabbinta kaarboonka oo wanaagsan

‣ Habayn xirfadeed
‣ Waqti gaaban oo lagu dhammaystirayo
‣ Sahay deggan
‣ Xakamaynta tayada iyo horumarinta joogtada ah

Epitaxy of GaN on Sapphire(Nalalka RGB/Mini/Micro LED);Epitaxy-ga GaN ee ku yaal Substrate-ka Si(UVC);Epitaxy-ga GaN ee ku yaal Substrate-ka Si(Qalabka Elektarooniga ah);Epitaxy of Si oo ku taal Substrate-ka Si(Wareeg isku dhafan);Epitaxy-ga SiC ee Substrate-ka SiC(Substrate);Epitaxy-ga InP ee InP-ga

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Faahfaahinta Badeecada

Calaamadaha Alaabta

Waxaan sii wadeynaa kordhinta iyo hagaajinta xalalkayaga iyo adeegyadeena. Isla mar ahaantaana, waxaan si firfircoon uga shaqeynaa cilmi-baarista iyo horumarinta Qiimaha ugu hooseeya ee Shiinaha Kuleyliyaha Garaafiga ee Tayada Sare leh ee loogu talagalay Foornada Silicon Ingot Polycrystalline, Shirkadeennu si dhakhso ah ayuu u koray cabbirka iyo caannimada sababtoo ah dadaalkiisa buuxa ee wax soo saarka tayada sare leh, qiimaha badan ee alaabada iyo bixiye macaamiil oo cajiib ah.
Waxaan sii wadeynaa inaan sii wadno kordhinta iyo hagaajinta xalalkayaga iyo adeegyadeena. Isla mar ahaantaana, waxaan si firfircoon uga shaqeynaa sidii aan u sameyn lahayn cilmi-baaris iyo horumarinFoornada Kululaynta ee Shiinaha Graphite, Goobta Kulaylka ee GraphiteKaliya si loo gaaro badeecada tayada wanaagsan si loo daboolo baahida macaamiisha, dhammaan alaabtayada iyo xalalkayaga si adag ayaa loo baaray ka hor inta aan la rarin. Had iyo jeer waxaan ka fikirnaa su'aasha dhinaca macaamiisha, sababtoo ah waad guuleysaneysaa, waan guuleysaneynaa!

2022 MOCVD Susceptor tayo sare leh Ka iibso online Shiinaha

Cufnaanta Muuqda:	1.85 g/cm3
Iska caabinta Korontada:	11 μΩm
Xoogga Laab-jeexa:	49 MPa (500kgf/cm2)
Adkaanta Xeebta:	58
Dambas:	<5ppm
Qaboojinta Kulaylka:	116 W/mK (100 kcal/mhr-℃)

Wafer waa gabal silicon ah oo qiyaastii 1 millimitir dhumucdiisu tahay oo leh dusha sare oo aad u fidsan iyada oo ay ugu wacan tahay hababka farsamo ahaan aadka u baahan. Isticmaalka xiga ayaa go'aaminaya habka beerista kiristaalka ee la isticmaali karo. Tusaale ahaan, habka Czochralski, silikoon polycrystalline waa la dhalaaliyaa ka dibna kiristaal iniin ah oo khafiif ah ayaa lagu shubaa silikoonka dhalaalay. Kiristaalka iniinaha ayaa markaa la rogrogaa oo si tartiib tartiib ah kor loogu soo jiidaa. Colossus aad u culus, oo ah monocrystal, ayaa ka dhasha. Waa suurtagal in la doorto astaamaha korantada ee monocrystal iyadoo lagu darayo cutubyo yaryar oo ah dopants saafi ah oo sarreeya. Kiristaaladaha waxaa lagu shubaa iyadoo la raacayo tilmaamaha macaamiisha ka dibna la safeeyo oo loo jaro xaleefyo. Ka dib tallaabooyin wax soo saar oo kala duwan, macaamilku wuxuu helaa waferskiisa gaarka ah ee baakad gaar ah, taas oo u oggolaanaysa macaamiisha inay isla markiiba u isticmaalaan waferka khadka wax soo saarka.

Waferku wuxuu u baahan yahay inuu maro dhowr tallaabo ka hor inta uusan diyaar u noqon in loo isticmaalo aaladaha elektaroonigga ah. Mid ka mid ah hababka muhiimka ah waa silicon epitaxy, kaas oo waferku lagu qaado susceptors-ka graphite. Sifooyinka iyo tayada susceptors-ku waxay saameyn muhiim ah ku leeyihiin tayada lakabka epitaxial-ka waferka.

Marxaladaha kaydinta filimada khafiifka ah sida epitaxy ama MOCVD, VET waxay bixisaa qalab garaafeed oo aad u saafi ah oo loo isticmaalo in lagu taageero substrates-ka ama "wafers". Aasaaska habka, qalabkan, susceptors-ka epitaxy ama goobaha dayax-gacmeedka ee MOCVD, ayaa marka hore lagu sameeyaa jawiga kaydinta:

Heerkul sare.
Faaruq sare.
Isticmaalka walxaha gaaska ee gardarrada leh.
Wax wasakh ah ma jiraan, diirka ma jiraan.
Iska caabbinta asiidhyada xooggan inta lagu jiro hawlaha nadiifinta