Intengo Ephansi Kakhulu Ye-China High Quality Graphite Heater Eyenziwe Ngokwezifiso Yesithando Somlilo Se-Polycrystalline Silicon Ingot

Incazelo emfushane:

Ubumsulwa < 5ppm
‣ Ukufana okuhle kwe-doping
‣ Ukuminyana okuphezulu kanye nokunamathela
‣ Ukumelana okuhle nokugqwala kanye nekhabhoni

‣ Ukwenza ngokwezifiso kobungcweti
‣ Isikhathi esifushane sokulethwa
‣ Ukunikezwa okuzinzile
‣ Ukulawulwa kwekhwalithi kanye nokuthuthuka okuqhubekayo

I-Epitaxy ye-GaN ku-Sapphire(I-RGB/I-Mini/I-Micro LED);I-Epitaxy ye-GaN ku-Si Substrate(i-UVC);I-Epitaxy ye-GaN ku-Si Substrate(Idivayisi kagesi);I-Epitaxy ye-Si ku-Si Substrate(Isekethe ehlanganisiwe);I-Epitaxy ye-SiC ku-SiC Substrate(I-substrate);I-Epitaxy ye-InP ku-InP

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Siyaqhubeka nokwandisa nokuthuthukisa izixazululo zethu kanye nensizakalo. Ngesikhathi esifanayo, sisebenza ngenkuthalo ukwenza ucwaningo kanye nokuthuthukisa i-Hiater ye-Graphite eyenziwe ngokwezifiso esezingeni eliphezulu yaseShayina ye-Polycrystalline Silicon Ingot Furnace, ibhizinisi lethu lakhula ngokushesha ngobukhulu kanye nokuthandwa ngenxa yokuzinikela kwalo ngokuphelele ekukhiqizeni kwekhwalithi ephezulu, intengo ephezulu yemikhiqizo kanye nomhlinzeki wamakhasimende omuhle kakhulu.
Siyaqhubeka nokwandisa nokuthuthukisa izixazululo zethu kanye nensizakalo. Ngesikhathi esifanayo, sisebenza ngenkuthalo ukwenza ucwaningo kanye nokuthuthukisaIsithando Sokushisa Se-Graphite SaseShayina, Insimu Yokushisa Ye-Graphite, Kuphela ngokufeza umkhiqizo wekhwalithi enhle ukuze kuhlangatshezwane nesidingo samakhasimende, yonke imikhiqizo nezixazululo zethu zihlolwe ngokucophelela ngaphambi kokuthunyelwa. Sihlala sicabanga ngombuzo ohlangothini lwamakhasimende, ngoba uyawina, thina siyawina!

I-MOCVD Susceptor esezingeni eliphezulu ka-2022 Thenga ku-inthanethi eShayina

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

I-wafer iyisiqeshana se-silicon esingaba yi-1 millimeter ubukhulu esinobuso obuyisicaba kakhulu ngenxa yezinqubo ezidinga kakhulu ubuchwepheshe. Ukusetshenziswa okulandelayo kunquma ukuthi iyiphi inqubo yokukhulisa ikristalu okufanele isetshenziswe. Enqubweni ye-Czochralski, isibonelo, i-polycrystalline silicon iyancibilika bese kuthi ikristalu yembewu encane njengepensela ifakwe ku-silicon encibilikisiwe. Ikristalu yembewu bese ijikeleziswa bese idonswa kancane kancane phezulu. Kuvela i-colossus esindayo kakhulu, i-monocrystal. Kungenzeka ukukhetha izici zikagesi ze-monocrystal ngokungeza amayunithi amancane ama-dopants ahlanzekile kakhulu. Amakristalu afakwa ngokuhambisana nemininingwane yekhasimende bese epholishwa futhi anqunywe abe yizicucu. Ngemuva kwezinyathelo ezahlukahlukene zokukhiqiza ezengeziwe, ikhasimende lithola ama-wafer alo acacisiwe ekupakishweni okukhethekile, okuvumela ikhasimende ukuthi lisebenzise i-wafer ngokushesha emgqeni walo wokukhiqiza.

I-wafer idinga ukudlula ezinyathelweni eziningana ngaphambi kokuba ilungele ukusetshenziswa kumadivayisi kagesi. Inqubo eyodwa ebalulekile yi-silicon epitaxy, lapho ama-wafer ethwalwa khona kuma-susceptors e-graphite. Izakhiwo kanye nekhwalithi yama-susceptors kunomthelela obalulekile ekhwalithini yengqimba ye-epitaxial ye-wafer.

Ngezigaba zokufakwa kwefilimu encane njenge-epitaxy noma i-MOCVD, i-VET inikeza imishini ye-graphite emsulwa kakhulu esetshenziselwa ukusekela ama-substrate noma "ama-wafers". Embindini wenqubo, le mishini, ama-epitaxy susceptors noma amapulatifomu esathelayithi e-MOCVD, kuqala afakwa endaweni yokufakwa kwefilimu:

Izinga lokushisa eliphezulu.
I-vacuum ephezulu.
Ukusetshenziswa kwezinto ezibangela igesi ezinamandla.
Akukho ukungcola, ukungabikho kokuxebuka.
Ukumelana nama-asidi aqinile ngesikhathi sokuhlanzwa