vet-china ta gabatar da sabuwar hanyar Vertical Column Wafer Boat & Pedestal, cikakkiyar mafita don ci gaba da sarrafa semiconductor. An ƙera ta da daidaito mai kyau, wannan tsarin sarrafa wafer yana ba da kwanciyar hankali da daidaito mara misaltuwa, mai mahimmanci ga yanayin masana'antu masu inganci.
Jirgin Ruwa na Wafer da Kewaye na Tsaye an gina shi da kayan aiki masu inganci waɗanda ke tabbatar da kwanciyar hankali da juriya ga tsatsauran sinadarai, wanda hakan ya sa ya dace da ayyukan ƙera semiconductor mafi wahala. Tsarin ginshiƙinsa na tsaye na musamman yana tallafawa wafers lafiya, yana rage haɗarin rashin daidaito da kuma lalacewar da za a iya samu yayin jigilar kaya da sarrafawa.
Tare da haɗa jirgin ruwa mai siffar kwalta da ƙafafu na veter-china mai siffar kwalta mai siffar kwalta mai siffar kwalta, masana'antun semiconductor za su iya tsammanin ingantaccen aiki, rage lokacin aiki, da kuma ƙaruwar yawan amfanin samfur. Wannan tsarin ya dace da girma dabam-dabam da tsare-tsare na wafer, yana ba da sassauci da kuma daidaitawa don buƙatun samarwa daban-daban.
Jajircewar likitocin dabbobi na kasar Sin ga yin aiki mai kyau yana tabbatar da cewa kowace jirgin ruwa mai siffar kwalta da ƙafafuwa ta tsaye ta cika mafi girman ƙa'idodi na inganci da aiki. Ta hanyar zaɓar wannan mafita ta zamani, kuna saka hannun jari a cikin wata hanya mai inganci ta gaba don sarrafa wafer wanda ke haɓaka inganci da aminci a masana'antar semiconductor.
Halayen carbide na silicon da aka sake yin amfani da shi
An sake yin amfani da silicon carbide (R-SiC) wani abu ne mai ƙarfi wanda ke da tauri fiye da lu'u-lu'u, wanda aka samar a zafin jiki sama da 2000℃. Yana riƙe da kyawawan halaye na SiC, kamar ƙarfin zafin jiki mai yawa, juriyar tsatsa mai ƙarfi, juriyar iskar shaka mai kyau, juriyar girgiza mai kyau, juriyar girgiza mai kyau da sauransu.
● Kyakkyawan halayen injiniya. Silinon carbide da aka sake yin amfani da shi yana da ƙarfi da tauri fiye da zare na carbon, juriya mai ƙarfi ga tasiri, yana iya yin aiki mai kyau a yanayin zafi mai tsanani, yana iya yin aiki mafi kyau a cikin yanayi daban-daban. Bugu da ƙari, yana da kyakkyawan sassauci kuma ba ya lalacewa cikin sauƙi ta hanyar shimfiɗawa da lanƙwasa, wanda ke inganta aikinsa sosai.
● Babban juriya ga tsatsa. Silinda carbide mai sake yin amfani da shi yana da juriya ga tsatsa ga nau'ikan kafofin watsa labarai daban-daban, yana iya hana lalacewar hanyoyin watsa labarai daban-daban, yana iya kiyaye halayen injinansa na dogon lokaci, yana da manne mai ƙarfi, don haka yana da tsawon rai na sabis. Bugu da ƙari, yana kuma da kyakkyawan kwanciyar hankali na zafi, yana iya daidaitawa da wasu nau'ikan canje-canjen zafin jiki, yana inganta tasirin aikace-aikacensa.
● Yin sintiri ba ya raguwa. Saboda tsarin sintiri ba ya raguwa, babu wani damuwa da zai haifar da nakasa ko tsagewar samfurin, kuma ana iya shirya sassan da ke da siffofi masu rikitarwa da daidaito sosai.
| 重结晶碳化硅物理特性 Halayen zahiri na Recrystallized Silicon Carbide | |
| 性质 / Kadara | 典型数值 / Darajar da Aka Saba |
| 使用温度/ Zafin aiki (°C) | 1600°C (tare da iskar oxygen), 1700°C (yanayin ragewa) |
| SiC含量/ Abubuwan da ke cikin SiC | > 99.96% |
| 自由Si含量/ Abubuwan Si kyauta | <0.1% |
| 体积密度/Yawan yawa | 2.60-2.70 g/cm3 |
| 气孔率/ A bayyane yake cewa akwai ramuka | <16% |
| 抗压强度/ Ƙarfin matsi | > 600MPa |
| 常温抗弯强度/Ƙarfin lanƙwasawa cikin sanyi | 80-90 MPa (20°C) |
| 高温抗弯强度Ƙarfin lanƙwasawa mai zafi | 90-100 MPa (1400°C) |
| 热膨胀系数/ Faɗaɗa zafi @1500°C | 4.70 10-6/°C |
| 导热系数/Maida wutar lantarki a zafin jiki @1200°C | 23W/m•K |
| 杨氏模量/ Modulus mai laushi | 240 GPA |
| 抗热震性/ Juriyar girgizar zafi | Mai kyau ƙwarai |
Makamashin VET shine Lallaiainihin masana'anta na samfuran graphite da silicon carbide na musamman tare da murfin CVD,iya bayarwadaban-dabansassa na musamman don masana'antar semiconductor da photovoltaic. OƘungiyar fasaha ta ku ta fito ne daga manyan cibiyoyin bincike na cikin gida, za su iya samar da ƙarin mafita na kayan aiki na ƙwararruna ka.
Muna ci gaba da haɓaka hanyoyin ci gaba don samar da ƙarin kayan aiki masu inganci,kumasun yi amfani da wata fasaha ta musamman da aka yi wa rijista, wadda za ta iya sa haɗin da ke tsakanin murfin da substrate ya yi ƙarfi kuma ya zama ba shi da sauƙin rabuwa.
| CVD SiC薄膜基本物理性能 Abubuwan asali na zahiri na CVD SiCshafi | |
| 性质 / Kadara | 典型数值 / Darajar da Aka Saba |
| 晶体结构 / Tsarin Crystal | Matakin FCC β多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21 g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Size na hatsi | 2 ~ 10μm |
| 纯度 / Tsarkakewar Sinadarai | 99.99995% |
| 热容 / Ƙarfin Zafi | 640 J·kg-1·K-1 |
| 升华温度 / Zafin Sublimation | 2700℃ |
| 抗弯强度 / Ƙarfin Lankwasawa | 415 MPa RT maki 4 |
| 杨氏模量 / Matashin Young | 430 GPA lanƙwasa 4pt, 1300℃ |
| 导热系数 / ThermalGudanar da wutar lantarki | 300W·m-1·K-1 |
| 热膨胀系数 / Faɗaɗawar Zafi (CTE) | 4.5×10-6K-1 |
Barka da zuwa ka ziyarci masana'antarmu, bari mu ci gaba da tattaunawa!
-
Kusoshin Graphite don injin murhu
-
Kamfanin Mai na Motoci na Lantarki (Electrolyti)...
-
Takardar takarda ta musamman ta pyrolytic carbon ta fl ...
-
60w Hydrogen Fuel Cell Pemfc-12v Stack For Labo...
-
Gyaran Iska Sanyaya Pemfc 60w Stack Hydro...
-
Tarin ƙwayoyin mai na 1kw don jiragen sama marasa matuƙa da kekuna na lantarki