Isikebhe Esiqondile Se-Wafer kanye Ne-Pedestal

Isithombe Esifakiwe Sesikebhe Esiyindilinga Sekholomu Eqondile Nesinqe

Incazelo emfushane:

I-Vertical Column Wafer Boat & Pedestal evela ku-vet-china inikeza ukuzinza okuphezulu kanye nokunemba ekuphatheni i-wafer yokukhiqiza i-semiconductor. Ngomklamo othuthukisiwe we-vet-china, lolu hlelo luqinisekisa ukuhambisana okuhle kanye nokugcinwa okuphephile, okuthuthukisa ukusebenza kahle kanye nokunciphisa umonakalo we-wafer.

Igama:Isikebhe Esiqinile Se-SiC Esiyindilinga

Izinto:I-SiC Ecwebezelisiwe Ephezulu Ehlanzekile

Isikhathi sokuthumela:Kuye Ngobuningi

I-OEM, i-ODM:Usekelo

Isitifiketi:IS09001:2015

I-MOQ:1pcs

Isampula:Kuyatholakala

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-vet-china iveza i-Vertical Column Wafer Boat & Pedestal entsha, isisombululo esiphelele sokucubungula ama-semiconductor okuthuthukisiwe. Yakhelwe ngokunemba okucophelelayo, lolu hlelo lokuphatha ama-wafer lunikeza ukuzinza nokuqondana okungenakuqhathaniswa, okubalulekile ezindaweni zokukhiqiza ezisebenza kahle kakhulu.

I-Vertical Column Wafer Boat & Pedestal yakhiwe ngezinto zekhwalithi ephezulu eziqinisekisa ukuzinza kokushisa kanye nokumelana nokugqwala kwamakhemikhali, okwenza ifaneleke kakhulu ezinqubweni zokwenziwa kwe-semiconductor ezidinga kakhulu. Umklamo wayo oyingqayizivele wekholomu eqondile usekela ama-wafer ngokuphephile, okunciphisa ingozi yokungahambisani kahle kanye nomonakalo ongaba khona ngesikhathi sokuthuthwa nokucubungula.

Ngokuhlanganiswa kwe-Vertical Column Wafer Boat & Pedestal ye-vet-china, abakhiqizi be-semiconductor bangalindela ukuthuthuka kokukhiqiza, isikhathi sokungasebenzi esincishisiwe, kanye nokwanda kwesivuno somkhiqizo. Lolu hlelo luhambisana nosayizi abahlukahlukene be-wafer kanye nokucushwa, okunikeza ukuguquguquka kanye nokukhula kwezidingo ezahlukene zokukhiqiza.

Ukuzibophezela kwe-vet-china ekwenzeni kahle kuqinisekisa ukuthi i-Vertical Column Wafer Boat & Pedestal ngayinye ihlangabezana nezindinganiso eziphakeme kakhulu zekhwalithi nokusebenza. Ngokukhetha lesi sixazululo esisezingeni eliphezulu, utshala imali endleleni yokuphatha i-wafer evikela ikusasa ekhulisa ukusebenza kahle nokuthembeka ekukhiqizweni kwe-semiconductor.

Isikebhe Esiqondile Se-Wafer kanye Ne-Pedestal

Izakhiwo ze-silicon carbide ephinde yasetshenziswa

I-silicon carbide ephinde yasetshenziswa (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni obulandela idayimane kuphela, eyakhiwa ekushiseni okuphezulu okungaphezu kuka-2000℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okunamandla, ukumelana okuhle kwe-oxidation, ukumelana okuhle kokushaqeka kokushisa nokunye.

● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide ephinde yasetshenziswa inamandla nokuqina okuphezulu kune-carbon fiber, ukumelana okukhulu komthelela, ingadlala ukusebenza okuhle ezindaweni ezinokushisa okukhulu, ingadlala ukusebenza okungcono kokuphikisana ezimweni ezahlukahlukene. Ngaphezu kwalokho, futhi inokuguquguquka okuhle futhi ayonakaliswa kalula ngokwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinde yasetshenziswa inokumelana nokugqwala okuphezulu ezinhlobonhlobo zemidiya, ingavimbela ukuguguleka kwezinhlobonhlobo zemidiya egqwalisayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nokuphila isikhathi eside kwenkonzo. Ngaphezu kwalokho, futhi inokuqina okuhle kokushisa, ingazivumelanisa nobubanzi obuthile bezinguquko zokushisa, ithuthukise umphumela wayo wokusetshenziswa.

● Ukusinta akunciphi. Ngenxa yokuthi inqubo yokusinta ayinciphi, akukho ukucindezeleka okusele okuzobangela ukuguquka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinezimo eziyinkimbinkimbi kanye nokunemba okuphezulu zingalungiswa.

重结晶碳化硅物理特性 Izakhiwo zomzimba ze-Recrystallised Silicon Carbide
性质 / Impahla	典型数值 / Inani Elijwayelekile
使用温度/ Izinga lokushisa lokusebenza (°C)	1600°C (ene-oxygen), 1700°C (indawo enciphisayo)
I-SiC含量/ Okuqukethwe kwe-SiC	> 99.96%
自由Si含量/ Okuqukethwe kwe-Si kwamahhala	< 0.1%
体积密度/Ubuningi obukhulu	2.60-2.70 g/cm³
气孔率/ Ukuvuleka okubonakalayo	< 16%
抗压强度/ Amandla okucindezela	> 600I-MPa
常温抗弯强度/Amandla okugoba abandayo	80-90 MPa (20°C)
高温抗弯强度Amandla okugoba ashisayo	90-100 MPa (1400°C)
热膨胀系数/ Ukwandiswa kokushisa @1500°C	4.70 10^-6/°C
导热系数/Ukushisa kwe-conductivity @1200°C	23Ububanzi/m•K
杨氏模量/ Imodulus enwebekayo	240 GPa
抗热震性/ Ukumelana nokushaqeka kokushisa	Kuhle kakhulu

I-VET Energy iyi- iumenzi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso ene-CVD coating,ingahlinzekaokuhlukahlukeneizingxenye ezenzelwe wena zemboni ye-semiconductor kanye ne-photovoltaic. OIthimba lakho lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, linganikeza izixazululo zezinto ezibonakalayo zobungcweti.kwakho.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu,futhibasebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwengubo kanye ne-substrate kuqine futhi kunganciphisi ukuhlukana.

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Modulus yentsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1