Vet-china inopa Vertical Column Wafer Boat & Pedestal itsva, mhinduro yakakwana yekugadzirisa semiconductor yepamusoro. Yakagadzirwa nemazvo, iyi sisitimu yekubata wafer inopa kugadzikana uye kurongeka kusingaenzaniswi, zvakakosha kuti nzvimbo dzekugadzira dzishande zvakanaka.
Chikepe cheVertical Column Wafer Boat & Pedestal chakagadzirwa nezvinhu zvepamusoro-soro zvinovimbisa kugadzikana kwekupisa uye kuramba ngura yemakemikari, zvichiita kuti chikwanise kugadzirwa ne semiconductor. Dhizaini yaro yakasiyana ye vertical column inotsigira ma wafer zvakachengeteka, zvichideredza njodzi yekusarongeka zvakanaka uye kukuvara kunogona kuitika panguva yekutakura nekugadzirisa.
Nekubatanidzwa kweVertical Column Wafer Boat & Pedestal yevet-china, vagadziri ve semiconductor vanogona kutarisira kuvandudzwa kwekushanda, kuderedzwa kwekushanda, uye kuwedzera kwegoho rechigadzirwa. Sisitimu iyi inoenderana nehukuru hwakasiyana hwewafer uye magadzirirwo ayo, ichipa kuchinjika uye kugona kukura zvinoenderana nezvinodiwa zvakasiyana zvekugadzira.
Kuzvipira kwevet-china pakuita basa rakanaka kunovimbisa kuti Vertical Column Wafer Boat & Pedestal yega yega inosangana nemhando yepamusoro uye mashandiro. Nekusarudza mhinduro iyi yemazuva ano, unoisa mari munzira yekubata wafer isingazokanganisa ramangwana iyo inowedzera kushanda zvakanaka uye kuvimbika mukugadzira semiconductor.
Hunhu hwesilicon carbide yakagadziriswazve
Silicon carbide (R-SiC) yakagadzirwazve ine simba guru uye kuomarara kuri pamusoro pedhaimani, iyo inoumbwa pakupisa kwakanyanya kupfuura 2000℃. Inoramba iine hunhu hwakanaka hweSiC, hwakadai sekusimba kwekupisa kwakanyanya, kuramba ngura kwakasimba, kuramba oxidation kwakanaka, kuramba kupisa kwakanyanya nezvimwewo.
● Hunhu hwakanaka kwazvo hwemakanika. Silicon carbide yakagayiwazve ine simba rakawanda uye kuomarara kupfuura carbon fiber, inodzivirira zvakanyanya, inogona kuita basa rakanaka munzvimbo dzinopisa zvakanyanya, inogona kuita basa riri nani mumamiriro akasiyana-siyana. Pamusoro pezvo, inewo kuchinjika kwakanaka uye haikuvadzwi nyore nyore nekutambanudza nekukotama, izvo zvinovandudza zvikuru mashandiro ayo.
● Kudzivirira ngura zvakanyanya. Silicon carbide yakadzokororwa ine kudzivirira ngura zvakanyanya kune zvakasiyana-siyana zvemidziyo, inogona kudzivirira kuparadzwa kwemhando dzakasiyana dzemidziyo inoparadza, inogona kuchengetedza hunhu hwayo hwemakanika kwenguva yakareba, ine kunamira kwakasimba, kuitira kuti ive nehupenyu hwakareba hwekushanda. Pamusoro pezvo, inewo kugadzikana kwakanaka kwekupisa, inogona kuchinjika kune mamwe marudzi ekuchinja kwekushisa, uye inovandudza mashandiro ayo.
● Kusvina hakutsvedzi. Nekuti maitiro ekusvina haatsvedzi, hapana kushushikana kunoramba kuripo kunokonzera kucheneruka kana kutsemuka kwechigadzirwa, uye zvikamu zvine maumbirwo akaomarara uye kunyatsoita basa zvakanaka zvinogona kugadzirwa.
| 重结晶碳化硅物理特性 Hunhu hwepanyama hweSilicon Carbide Yakagadziriswazve | |
| 性质 / Pfuma | 典型数值 / Kukosha Kwakajairika |
| 使用温度/ Tembiricha yekushanda (°C) | 1600°C (ine okisijeni), 1700°C (nzvimbo inoderedza kupisa) |
| SiC含量/ Zviri mukati meSiC | > 99.96% |
| 自由Si含量/ Zvemukati zveSi zvemahara | < 0.1% |
| 体积密度/Kuwanda kwehuwandu | 2.60-2.70 g/cm3 |
| 气孔率/ Kuoneka kwekureruka | < 16% |
| 抗压强度/ Simba rekudzvanya | > 600MPa |
| 常温抗弯强度/Simba rekukotama rinotonhora | 80-90 MPa (20°C) |
| 高温抗弯强度Simba rinopisa rekukotama | 90-100 MPa (1400°C) |
| 热膨胀系数/ Kuwedzera kwekupisa @1500°C | 4.70 10-6/°C |
| 导热系数/Kufambisa kwekupisa @1200°C | 23W/m•K |
| 杨氏模量/ Modulus ye elastic | 240 GPa |
| 抗热震性/ Kudzivirira kupisa | Zvakanaka kwazvo |
VET Energy ndiyo iyomugadziri chaiye wezvigadzirwa zve graphite ne silicon carbide zvakagadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvikamu zvakagadzirirwa zve semiconductor uye photovoltaic industry. OChikwata chedu chehunyanzvi chinobva kumasangano makuru ekutsvagisa emuno, chinogona kupa mhinduro dzehunyanzvi.zvako.
Tinogara tichigadzira maitiro epamusoro-soro kuti tipe zvinhu zvepamusoro-soro,uyevakashanda tekinoroji ine patent yakasarudzika, iyo inogona kuita kuti kubatana pakati pekupenda ne substrate kuve kwakasimba uye kusanyanya kupatsanurwa.
| CVD SiC薄膜基本物理性能 Hunhu hweCVD SiCkuputira | |
| 性质 / Pfuma | 典型数值 / Kukosha Kwakajairika |
| 晶体结构 / Chimiro cheKristaro | Chikamu cheFCC β多晶，主要為（111）取向 |
| 密度 / Kuwanda kwehuwandu | 3.21 g/cm³ |
| 硬度 / Kuomarara | 2500 维氏硬度 (500g mutoro) |
| 晶粒大小 / Saizi yeZviyo | 2 ~ 10μm |
| 纯度 / Kuchena kwemakemikari | 99.99995% |
| 热容 / Kugona Kupisa | 640 J·kg-1·K-1 |
| 升华温度 / Kupisa kweSublimation | 2700℃ |
| 抗弯强度 / Simba reKuchinjika | 415 MPa RT ine mapoinzi mana |
| 杨氏模量 / Modulus yeVadiki | 430 Gpa 4pt bend, 1300℃ |
| 导热系数 / ThermalKufambisa kwemhepo | 300W·m-1·K-1 |
| 热膨胀系数 / Kuwedzera kweThermal (CTE) | 4.5×10-6K-1 |
Tinokugamuchirai neushamwari kuti mushanyire fekitori yedu, ngatikurukurei zvakawanda!
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