I-Wafer yeKholamu ethe nkqo kunye nePedestal

Umfanekiso ocacileyo weSikhephe seWafer esime nkqo kunye nePedestal

Inkcazo emfutshane:

I-Vertical Column Wafer Boat & Pedestal evela kwi-vet-china inika uzinzo oluphezulu kunye nokuchaneka ekuphatheni ii-wafer kwimveliso ye-semiconductor. Ngoyilo oluphambili lwe-vet-china, le nkqubo iqinisekisa ukulungelelaniswa okufanelekileyo kunye nokugcinwa okukhuselekileyo, iphucula ukusebenza kakuhle kwaye inciphisa umonakalo we-wafer.

Igama:Isikhephe seSiC esime nkqo seWafer

Izixhobo:I-SiC ecocekileyo kakhulu

Ixesha lokuzisa:Kuxhomekeke kubungakanani

I-OEM, i-ODM:Inkxaso

Isatifikethi:IS09001:2015

I-MOQ:1pcs

Isampuli:Iyafumaneka

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-vet-china ibonelela nge-Vertical Column Wafer Boat & Pedestal entsha, isisombululo esibanzi sokucubungula i-semiconductor ephucukileyo. Yenzelwe ngokuchanekileyo, le nkqubo yokuphatha i-wafer inika uzinzo olungenakuthelekiswa nanto kunye nolungelelwaniso, olubalulekileyo kwiindawo zokwenza izinto ngempumelelo ephezulu.

I-Vertical Column Wafer Boat & Pedestal yakhiwe ngezinto zodidi oluphezulu eziqinisekisa uzinzo lobushushu kunye nokumelana nokugqwala kweekhemikhali, nto leyo eyenza ukuba ifaneleke kwiinkqubo zokwenza ii-semiconductor ezifuna kakhulu. Uyilo lwayo olukhethekileyo lwekholamu ethe nkqo luxhasa ii-wafers ngokukhuselekileyo, lunciphisa umngcipheko wokungahambi kakuhle kunye nomonakalo onokubakho ngexesha lokuthuthwa kunye nokucutshungulwa.

Ngokudityaniswa kweVertical Column Wafer Boat & Pedestal yevet-china, abavelisi be-semiconductor banokulindela ukuphuculwa komthamo wokusebenza, ukunciphisa ixesha lokungasebenzi, kunye nokwanda kwemveliso. Le nkqubo iyahambelana nobukhulu obahlukeneyo be-wafer kunye noqwalaselo, inika ukuguquguquka kunye nokukhula kwiimfuno ezahlukeneyo zemveliso.

Ukuzinikela kwe-vet-china ekugqweseni kuqinisekisa ukuba i-Vertical Column Wafer Boat & Pedestal nganye ihlangabezana nemigangatho ephezulu yomgangatho kunye nokusebenza. Ngokukhetha esi sisombululo siphambili, utyala imali kwindlela yokuphatha ii-wafer eqinisekisa ikamva ephucula ukusebenza kakuhle kunye nokuthembeka kwimveliso ye-semiconductor.

I-Wafer yeKholamu ethe nkqo kunye nePedestal

Iimpawu ze-silicon carbide ephinde yasetyenziswa

I-recrystalized silicon carbide (R-SiC) sisixhobo esisebenza kakuhle kakhulu esinobunzima obulandelayo emva kwedayimani, esenziwe kubushushu obuphezulu obungaphezulu kwama-2000℃. Igcina iipropati ezininzi ezintle zeSiC, ezinje ngamandla obushushu obuphezulu, ukumelana nokugqwala okunamandla, ukumelana nokuxinana okugqwesileyo, ukumelana nokuxinana okufanelekileyo kobushushu, njl.njl.

● Iipropati ezibalaseleyo zoomatshini. I-silicon carbide ephinde yasetyenziswa inamandla aphezulu kwaye iqinile kune-carbon fiber, iyamelana nefuthe eliphezulu, inokudlala kakuhle kwiindawo ezinobushushu obuphezulu, inokudlala ngcono ukulingana kwiimeko ezahlukeneyo. Ukongeza, ikwanokuguquguquka okuhle kwaye ayonakaliswa lula ngokuzolula nokugoba, nto leyo ephucula kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinda isetyenziswe inokumelana nokugqwala okuphezulu kwiindidi ezahlukeneyo zemidiya, inokuthintela ukugqwala kweentlobo ngeentlobo zemidiya egqwalisayo, inokugcina iipropati zayo zoomatshini ixesha elide, inokunamathela ngamandla, ukuze ibe nobomi obude benkonzo. Ukongeza, ikwanayo nokuzinza okuhle kobushushu, inokuqhelana notshintsho oluthile lobushushu, iphucule isiphumo sayo sokusebenza.

● Ukusila akunciphi. Ngenxa yokuba inkqubo yokusila ayinciphi, akukho xinzelelo lushiyekileyo oluya kubangela ukuguguleka okanye ukuqhekeka kwemveliso, kwaye iindawo ezineemilo ezintsonkothileyo kunye nokuchaneka okuphezulu zinokulungiswa.

重结晶碳化硅物理特性 Iimpawu ezibonakalayo zeSilicon Carbide ephinde yasetyenziswa
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
使用温度/ Ubushushu bokusebenza (°C)	1600°C (eneoksijini), 1700°C (indawo enciphisa umoya)
I-SiC含量/ Umxholo weSiC	> 99.96%
自由Si含量/ Umxholo wasimahla we-Si	< 0.1%
体积密度/Unizi lolwapho kuyiwa khona	2.60-2.70 g/cm³
气孔率/ Ukuvuleka okubonakalayo	< 16%
抗压强度/ Amandla oxinzelelo	> 600I-MPa
常温抗弯强度/Amandla okugoba abandayo	80-90 MPa (20°C)
高温抗弯强度Amandla okugoba ashushu	90-100 MPa (1400°C)
热膨胀系数/ Ukwandiswa kobushushu @1500°C	4.70 10^-6/°C
导热系数/Ukuqhuba kobushushu @1200°C	23W/m•K
杨氏模量/ Imodulus ethambileyo	240 GPa
抗热震性/ Ukumelana noxinzelelo lobushushu	Kuhle kakhulu

I-VET Energy yi iumenzi wokwenyani weemveliso zegrafiti kunye nesilicon carbide ezenziwe ngokwezifiso ezine-CVD coating,ingabonelelaezahlukeneyoiindawo ezenzelwe wena zeshishini le-semiconductor kunye ne-photovoltaic. OIqela lakho lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbiyeyakho.

Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikeze izixhobo eziphucukileyo ngakumbi,kwayebaye basebenza iteknoloji ekhethekileyo enelungelo elilodwa lomenzi wechiza, enokwenza ukubopha phakathi kwengubo kunye ne-substrate kube nzima kwaye kungabi lula ukwahlukana.

I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lwekristale	Isigaba se-FCC β多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ubukhulu beenkozo	2 ~ 10μm
纯度 / Ucoceko lweekhemikhali	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Ubushushu bokunyibilikisa	2700℃
抗弯强度 / Amandla okugobeka	I-415 MPa RT 4-point
杨氏模量 / Imodulus yoLutsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwandiswa kobushushu (CTE)	4.5×10^-6K^-1