vet-china e hlahisa Vertical Column Wafer Boat & Pedestal e ncha, tharollo e felletseng bakeng sa ts'ebetso e tsoetseng pele ea semiconductor. E entsoe ka ho nepahala ho hlokolosi, sistimi ena ea ho sebetsana le wafer e fana ka botsitso le ho hokahanya ho sa bapisoeng, e leng ea bohlokoa bakeng sa tikoloho ea tlhahiso e sebetsang hantle haholo.
Sekepe sa Vertical Column Wafer & Pedestal se hahiloe ka thepa ea boleng bo holimo e netefatsang botsitso ba mocheso le ho hanyetsa mafome a lik'hemik'hale, e leng se etsang hore se lokele lits'ebetso tse thata ka ho fetisisa tsa tlhahiso ea semiconductor. Moralo oa sona o ikhethang oa kholomo e otlolohileng o tšehetsa li-wafer ka mokhoa o sireletsehileng, o fokotsa kotsi ea ho se lumellane hantle le tšenyo e ka bang teng nakong ea lipalangoang le ts'ebetso.
Ka ho kopanngoa ha Vertical Column Wafer Boat & Pedestal ea vet-china, bahlahisi ba semiconductor ba ka lebella ntlafatso ea tlhahiso, phokotso ea nako ea ho sebetsa, le keketseho ea chai ea sehlahisoa. Sistimi ena e tsamaisana le boholo le litlhophiso tse fapaneng tsa wafer, e fana ka ho tenyetseha le ho hola bakeng sa litlhoko tse fapaneng tsa tlhahiso.
Boitlamo ba vet-china ba ho etsa bokhabane bo netefatsa hore Vertical Column Wafer Boat & Pedestal e 'ngoe le e 'ngoe e fihlela maemo a holimo a boleng le ts'ebetso. Ka ho khetha tharollo ena ea sejoale-joale, u tsetela mokhoeng o sireletsang bokamoso oa ho sebetsana le wafer o eketsang bokhoni le ts'epo tlhahisong ea semiconductor.
Thepa ea carbide ea silicon e entsoeng hape
Carbide ea silicon e nchafalitsoeng (R-SiC) ke thepa e sebetsang hantle haholo e nang le boima bo latelang daemane feela, e entsoeng mochesong o phahameng o fetang 2000℃. E boloka thepa e mengata e ntle ea SiC, joalo ka matla a mocheso o phahameng, ho hanyetsa mafome ka matla, ho hanyetsa oxidation ka mokhoa o motle, ho hanyetsa hantle mocheso le tse ling.
● Thepa e ntle haholo ea mechini. Carbide ea silicon e nchafalitsoeng e na le matla le ho tiea ho feta fiber ea carbon, e hanyetsa ka matla a phahameng, e ka bapala ts'ebetso e ntle maemong a mocheso o feteletseng, e ka bapala ts'ebetso e ntle ea ho hanyetsa maemo maemong a fapaneng. Ho feta moo, e boetse e na le ho tenyetseha ho hoholo 'me ha e senyehe habonolo ka ho otlolla le ho kobeha, e leng se ntlafatsang ts'ebetso ea eona haholo.
● Ho hanyetsa ho hoholo ha mafome. Carbide ea silicon e nchafalitsoeng e na le ho hanyetsa ho hoholo ha mafome ho mefuta e fapaneng ea mecha ea phatlalatso, e ka thibela ho senyeha ha mefuta e fapaneng ea mecha ea phatlalatso e senyang, e ka boloka thepa ea eona ea mechini nako e telele, e na le ho khomarela ho matla, e le hore e be le bophelo bo bolelele ba tšebeletso. Ho phaella moo, e boetse e na le botsitso bo botle ba mocheso, e ka ikamahanya le mefuta e itseng ea liphetoho tsa mocheso, ea ntlafatsa phello ea ts'ebeliso ea eona.
● Ho sila ha ho fokotsehe. Hobane ts'ebetso ea ho sila ha e fokotsehe, ha ho na khatello e setseng e tla baka ho fetoha kapa ho petsoha ha sehlahisoa, 'me likarolo tse nang le libopeho tse rarahaneng le ho nepahala ho hoholo li ka lokisoa.
| 重结晶碳化硅物理特性 Thepa ea 'mele ea Silicon Carbide e Nchafalitsoeng | |
| 性质 / Thepa | 典型数值 / Boleng bo Tloaelehileng |
| 使用温度/ Mocheso o sebetsang (°C) | 1600°C (ka oksijene), 1700°C (tikoloho e fokotsang) |
| SiC含量/ Dikahare tsa SiC | > 99.96% |
| 自由Si含量/ Dikahare tsa mahala tsa Si | < 0.1% |
| 体积密度/Bongata ba bongata | 2.60-2.70 g/cm3 |
| 气孔率/ Ho bonahala eka ho na le masoba | < 16% |
| 抗压强度/ Matla a khatello | > 600MPa |
| 常温抗弯强度/Matla a ho koba a batang | 80-90 MPa (20°C) |
| 高温抗弯强度Matla a ho koba a chesang | 90-100 MPa (1400°C) |
| 热膨胀系数/ Katoloso ea mocheso @1500°C | 4.70 10-6/°C |
| 导热系数/Ho tsamaisa mocheso ka mocheso @1200°C | 23Bophahamo/m•K |
| 杨氏模量/ Modulus ea elastic | 240 GPa |
| 抗热震性/ Ho hanyetsa ho thothomela ha mocheso | E ntle haholo |
VET Energy ke emoetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse ikhethileng tse nang le pente ea CVD,e ka fana katse fapanenglikarolo tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic. OSehlopha sa rona sa botekgeniki se tsoa litsing tse holimo tsa lipatlisiso tsa lehae, se ka fana ka litharollo tse ling tsa lisebelisoa tsa profeshenalemolemong oa hau.
Re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele haholoanyane,leba sebelitse theknoloji e ikhethang e nang le patente, e ka etsang hore kamano pakeng tsa sekoahelo le substrate e tiee le hore e se ke ea arohana habonolo.
| CVD SiC薄膜基本物理性能 Thepa ea motheo ea 'mele ea CVD SiCsekoahelo | |
| 性质 / Thepa | 典型数值 / Boleng bo Tloaelehileng |
| 晶体结构 / Sebopeho sa kristale | Mokhahlelo oa FCC β多晶，主要為（111）取向 |
| 密度 / Botenya | 3.21 g/cm³ |
| 硬度 / Bothata | 2500 维氏硬度 (moroalo oa 500g) |
| 晶粒大小 / Sekala sa Lithollo | 2 ~ 10μm |
| 纯度 / Bohloeki ba Lik'hemik'hale | 99.99995% |
| 热容 / Bokgoni ba Mocheso | 640 J·kg-1·K-1 |
| 升华温度 / Mocheso oa Sublimation | 2700℃ |
| 抗弯强度 / Matla a ho Kobeha | 415 MPa RT lintlha tse 4 |
| 杨氏模量 / Modulus ea Bacha | 430 Gpa kobeho ea 4pt, 1300℃ |
| 导热系数 / ThermalHo khanna motlakase | 300W·m-1·K-1 |
| 热膨胀系数 / Katoloso ea Thermal (CTE) | 4.5×10-6K-1 |
Re u amohela ka mofuthu ho etela fektheri ea rona, ha re buisaneng ka ho eketsehileng!
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