Hōʻike ʻo vet-china i ka Vertical Column Wafer Boat & Pedestal hou, kahi hopena piha no ka hana semiconductor holomua. Hoʻolālā ʻia me ka pololei meticulous, hāʻawi kēia ʻōnaehana lawelawe wafer i ke kūpaʻa a me ke kūlike ʻole, koʻikoʻi no nā wahi hana hana kiʻekiʻe.
Ua kūkulu ʻia ka Vertical Column Wafer Boat & Pedestal me nā mea hana kiʻekiʻe e hōʻoiaʻiʻo ana i ke kūpaʻa wela a me ke kūʻē ʻana i ka pala kemika, e kūpono ai no nā kaʻina hana semiconductor koi loa. Kākoʻo kāna hoʻolālā kolamu kū hoʻokahi i nā wafers me ka palekana, e hōʻemi ana i ka pilikia o ka misalignment a me ka hiki ke hōʻino ʻia i ka wā o ka lawe ʻana a me ka hana ʻana.
Me ka hoʻohui ʻana o ka Vertical Column Wafer Boat & Pedestal a vet-china, hiki i nā mea hana semiconductor ke manaʻo i ka hoʻomaikaʻi ʻia ʻana o ka throughput, ka hoʻemi ʻana i ka downtime, a me ka hoʻonui ʻia ʻana o ka huahana. He kūpono kēia ʻōnaehana me nā nui wafer like ʻole a me nā hoʻonohonoho ʻana, e hāʻawi ana i ka maʻalahi a me ka scalability no nā pono hana like ʻole.
ʻO ke kūpaʻa o vet-china i ka maikaʻi loa e hōʻoiaʻiʻo ana e hoʻokō kēlā me kēia Vertical Column Wafer Boat & Pedestal i nā kūlana kiʻekiʻe loa o ka maikaʻi a me ka hana. Ma ke koho ʻana i kēia hopena ʻoi loa, hoʻopukapuka ʻoe i kahi ala e hōʻoia ai i ka wā e hiki mai ana i ka lawelawe wafer e hoʻonui ai i ka pono a me ka hilinaʻi i ka hana semiconductor.
Nā waiwai o ka carbide silicon i hoʻopili hou ʻia
ʻO ka silicon carbide i hoʻopili hou ʻia (R-SiC) kahi mea hana kiʻekiʻe me ka paʻakikī ʻelua wale nō i ka daimana, i hoʻokumu ʻia ma kahi mahana kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi loa o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ikaika i ka pala, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu wela maikaʻi a pēlā aku.
● Nā waiwai mechanical maikaʻi loa. ʻOi aku ka ikaika a me ke kūpaʻa o ka silicon carbide i hoʻopili hou ʻia ma mua o ke kalapona fiber, kū'ē i ka hopena kiʻekiʻe, hiki ke pāʻani i kahi hana maikaʻi i nā wahi mahana koʻikoʻi, hiki ke pāʻani i kahi hana counterbalance maikaʻi aʻe i nā kūlana like ʻole. Eia kekahi, he maʻalahi hoʻi kona a ʻaʻole maʻalahi e hōʻino ʻia e ke kīkoʻo ʻana a me ke kūlou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.
● Ke kūpaʻa kiʻekiʻe i ka pala. Loaʻa i ka silicon carbide i hoʻopili hou ʻia ke kūpaʻa kiʻekiʻe i ka pala i nā ʻano media like ʻole, hiki ke pale i ka ʻino ʻana o nā ʻano media corrosive like ʻole, hiki ke mālama i kona mau waiwai mechanical no ka manawa lōʻihi, he pipili ikaika, no laila he ola lawelawe lōʻihi. Eia kekahi, he kūpaʻa maikaʻi hoʻi kona, hiki ke hoʻololi i kahi ākea o nā loli mahana, hoʻomaikaʻi i kāna hopena noi.
● ʻAʻole emi ka sintering. No ka mea, ʻaʻole emi ka hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoulu ai i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ke kiko kiʻekiʻe.
| 重结晶碳化硅物理特性 Nā waiwai kino o ka Silicon Carbide i hoʻopili hou ʻia | |
| 性质 / Waiwai | 典型数值 / Waiwai Maʻamau |
| 使用温度/ Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (ka hoʻemi ʻana i ke kaiapuni) |
| SiC含量/ ʻIke SiC | > 99.96% |
| 自由Si含量/ ʻIke manuahi Si | < 0.1% |
| 体积密度/Ka nui o ka nui | 2.60-2.70 g/cm3 |
| 气孔率/ Porosity ʻike ʻia | < 16% |
| 抗压强度/ Ikaika kaomi | > 600MPa |
| 常温抗弯强度/Ikaika kūlou anu | 80-90 MPa (20°C) |
| 高温抗弯强度Ikaika kūlou wela | 90-100 MPa (1400°C) |
| 热膨胀系数/ Hoʻonui wela @1500°C | 4.70 10-6/°C |
| 导热系数/Ka hoʻokele wela ma 1200°C | 23W/m•K |
| 杨氏模量/ Modulus elastic | 240 GPa |
| 抗热震性/ Ke kū'ē ʻana i ka haʻalulu wela | Maikaʻi loa |
ʻO VET Energy kamea hana maoli o nā huahana graphite a me silicon carbide i hoʻopilikino ʻia me ka uhi ʻana o CVD,hiki ke hoʻolakonā ʻano like ʻolenā ʻāpana i hoʻopilikino ʻia no ka semiconductor a me ka ʻoihana photovoltaic. Ohele mai kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā hoʻonā mea ʻoihana hou akunāu.
Hoʻomau mākou i ka hoʻomohala ʻana i nā kaʻina hana holomua e hoʻolako i nā mea holomua hou aʻe,a meua hana i kahi ʻenehana i hoʻopaʻa ʻia kū hoʻokahi, hiki ke hoʻopaʻa i ka pilina ma waena o ka uhi a me ka substrate a emi iki ka maʻalahi o ka hemo ʻana.
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCuhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai Maʻamau |
| 晶体结构 / ʻAno Crystal | Pae β FCC多晶，主要为（111）取向 |
| 密度 / Ka nui o ka paʻa | 3.21 g/cm³ |
| 硬度 / Paʻakikī | 2500 维氏硬度（500g load） |
| 晶粒大小 / Ka nui o ka palaoa | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Ka Mana Wela | 640 J·kg-1·K-1 |
| 升华温度 / Mahana Hoʻohaʻahaʻa | 2700℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-kiko |
| 杨氏模量 / Modulus o Young | 430 Gpa 4pt kūlou, 1300 ℃ |
| 导热系数 / ThermalKa hoʻokele ʻana | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Wela (CTE) | 4.5×10-6K-1 |
Ke hoʻokipa maikaʻi nei iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou aku kākou!
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