Ukwaleka kweCVD

Iingubo zeCVD zokuSebenza ngeSemiconductor eziPhambili

Zenzelwe iimeko ezibalulekileyo zokwenziwa kwee-semiconductor, ii-Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), kunye ne-Pyrolytic Carbon (PyC) coatings zethu zibonelela ngokungangeni kakuhle kweekhemikhali, uzinzo olugqithisileyo lobushushu, kunye nobunyulu obuphezulu kakhulu (<5 ppm). Zenzelwe ukukhusela i-graphite ephezulu kunye ne-ceramic substrates kwi-plasma enamandla, iigesi zenkqubo yokusabela, kunye nokujikeleza okuphezulu kobushushu, ii-coatings zethu eziphambili zinciphisa ukuveliswa kwee-particles kwaye zandisa kakhulu ubomi be-component kwi-component.I-Silicon/SiC Epitaxy, i-MOCVD, i-Plasma Etching, kunye ne-Monocrystal Growthizicelo.

Ubumsulwa obuphezulu kakhulu (<5 ppm)

Ukungcola okuphantsi kwesinyithi okuqinisekisiwe yi-GDMS ukuthintela ungcoliseko lwe-wafer kwiinkqubo ezibalulekileyo.

Ukumelana okuphezulu kwePlasma kunye neGesi

Ulwakhiwo oluxineneyo lwekristale lukhusela kwi-halogen plasma (CF₄, NF₃, Cl₂) kunye neegesi ezirhabaxa.

Ukufaniswa kobushushu okulungiselelweyo

Ulawulo oluqinileyo lwe-CTE lususa ukuqhekeka okuncinci kunye nokususwa kwe-coating phantsi koxinzelelo olukhulu lobushushu.

Uhlobo lokwaleka	Inzuzo yoBugcisa obuPhambili	Isicelo seNkqubo ePhambili
Ukwaleka kweCVD SiC	Ukuqhuba okuphezulu kobushushu, ukumelana okuhle kakhulu nokukhukuliseka kweplasma	I-Dry Etch, i-Si Epitaxy, i-MOCVD, i-Crystal Growth
Ukwaleka kwe-CVD TaC	Ukumelana nobushushu obugqithisileyo (>2000°C), isithintelo sokugqwala se-H₂/SiH₄	Ukukhula kweSiC Epitaxy, iSiC PVT eSingle-Crystal
Ukwaleka kwePyC	Ukuvalwa kwegesi egqunywe yi-hermetic, umphezulu wekhabhoni othambileyo kakhulu we-anisotropic	Ubushushu bentsimi eshushu, i-CZ Monocrystalline Silicon