I-Wafer susceptor ene-TaC yokwambathisa ye-G5 G10

I-VET Energy's iphuhliswe ngokuzimeleyo iCVD tantalum carbide (TaC) yokugquma iwafer susceptor yenzelwe iimeko zokusebenza ezinzima ezifana nokuveliswa kwe-semiconductor, ukukhula kwe-LED epitaxial wafer (MOCVD), iziko lokukhula kwekristale, unyango lobushushu obuphezulu lobushushu, njl. i-substrate, enika itreyi ukuzinza kobushushu obuphezulu (> 3000 ℃), ukuxhathisa ukubola kwesinyithi esinyibilikisiweyo, ukuxhathisa ukothuka kwe-thermal kunye neempawu ezisezantsi zongcoliseko, ukwandisa kakhulu ubomi benkonzo.

Izibonelelo zethu zobugcisa:
1. Uzinzo lobushushu obuphezulu kakhulu.
I-3880 ° C Indawo yokunyibilika: I-Tantalum carbide coating ingasebenza ngokuqhubekayo kwaye igxininise ngaphezu kwe-2500 ° C, idlula kakhulu i-1200-1400 ° C iqondo lokushisa lokubola kweengubo eziqhelekileyo ze-silicon carbide (SiC).
Ukuxhathisa ukutshatyalaliswa kwe-thermal: I-coefficient yokwandiswa kwe-thermal yokwaleka ihambelana ne-graphite substrate (6.6 × 10 -6 / K), kwaye inokumelana nokunyuka kweqondo lokushisa ngokukhawuleza kunye nokujikeleza kokuwa kunye nokwahlukana kweqondo lokushisa elingaphezulu kwe-1000 ° C ukuphepha ukuqhekeka okanye ukuwa.
Iimpawu zomatshini wobushushu obuphezulu: Ubulukhuni bokugquma bufikelela kwi-2000 HK (ubulukhuni beVickers) kunye nemodyuli elastiki yi-537 GPa, kwaye isagcina amandla abalaseleyo esakhiwo kumaqondo obushushu aphezulu.

2. Ukumelana ne-corrosion kakhulu ukuqinisekisa ukucoceka kwenkqubo
Ukumelana okugqwesileyo: Inokumelana okugqwesileyo kwiigesi ezitshabalalisayo ezifana ne-H₂, NH₃, SiH₄, HCl kunye neentsimbi ezityhidiweyo (umz. Si, Ga), ihlukanise ngokupheleleyo i-graphite substrate kwindawo esebenzayo kunye nokuphepha ukungcoliswa kwekhabhoni.
Ukufuduka kokungcola okuphantsi: ukuhlanjululwa kwe-ultra-high, ukuthintela ngokufanelekileyo ukufuduka kwe-nitrogen, i-oksijeni kunye nezinye izinto ezingcolileyo kwi-crystal okanye i-epitaxial layer, ukunciphisa izinga le-defect of microtubes ngaphezu kwe-50%.

3. Ukuchaneka kwe-Nano-level ukuphucula ukuhambelana kwenkqubo
I-Coating uniformity: ukunyamezela kobunzima≤± 5%, ukuphakama komphezulu kufikelela kwinqanaba le-nanometer, ukuqinisekisa ukuhambelana okuphezulu kwe-wafer okanye i-crystal parameters ukukhula, i-thermal uniformity error <1%.
Ukuchaneka komgangatho: ixhasa ± 0.05mm ukunyamezela ukulungelelaniswa, ukulungelelanisa kwi-4-intshi ukuya kwi-12-intshi ye-wafers, kwaye ihlangabezana neemfuno ze-interfaces zezixhobo ezichanekileyo.

4. Ihlala ixesha elide kwaye ihlala njalo, ukunciphisa iindleko zizonke
Amandla okudibanisa: Amandla okudibanisa phakathi kwengubo kunye ne-graphite substrate yi-≥5 MPa, ukumelana nokuguguleka kunye nokugqoka, kwaye ubomi benkonzo bandiswa ngamaxesha angaphezu kwe-3.

Ukuhambelana komatshini
Ifanelekile kwi-epitaxial engundoqo kunye nezixhobo zokukhula kwe-crystal ezifana ne-CVD, i-MOCVD, i-ALD, i-LPE, njl., ukugubungela ukukhula kwe-SiC crystal (indlela ye-PVT), i-GaN epitaxy, ukulungiswa kwe-substrate ye-AlN kunye nezinye iimeko.
Sinikezela ngeendidi zeemilo ze-susceptor ezifana ne-flat, i-concave, i-convex, njl njl. Ubukhulu (5-50mm) kunye nokuhlelwa komngxuma wokumisa kunokulungiswa ngokwesakhiwo somngxunya ukuze kufezekiswe Ukuhambelana okungapheliyo kunye nezixhobo.

Usetyenziso oluphambili:
Ukukhula kwe-crystal ye-SiC: Kwindlela ye-PVT, i-coating inokwandisa ukuhanjiswa kwentsimi ye-thermal, ukunciphisa iziphene ezinqamlekileyo, kunye nokwandisa indawo yokukhula esebenzayo ye-crystal ibe ngaphezu kwe-95%.
I-GaN epitaxy: Kwinkqubo ye-MOCVD, i-susceptor thermal uniformity error yi-<1%, kwaye ukuhambelana kwe-epitaxial layer ifikelela ku-± 2%.
Ukulungiswa kwe-substrate ye-AlN: Kwiqondo lokushisa eliphezulu (> 2000 ° C) ukusabela kwe-amination, i-TaC yokugqoka iyakwazi ukuhlukanisa ngokupheleleyo i-graphite substrate, igweme ukungcoliswa kwekhabhoni, kwaye iphucule ukucoceka kwe-crystal ye-AlN.