I-wafer susceptor ene-TaC coating ye-G5 G10

I-CVD tantalum carbide (TaC) coating wafer susceptor eyenziwe ngokuzimeleyo yi-VET Energy yenzelwe iimeko ezinzima zokusebenza ezifana nokuveliswa kwe-semiconductor, ukukhula kwe-LED epitaxial wafer (MOCVD), isithando sokukhulisa ikristale, unyango lobushushu be-vacuum obuphezulu, njl. Ngokusebenzisa itekhnoloji ye-chemical vapor deposition (CVD), i-tantalum carbide coating exineneyo nefanayo yenziwa phezu komphezulu we-graphite substrate, inika itreyi uzinzo lobushushu obuphezulu kakhulu (>3000℃), ukumelana nokugqwala kwesinyithi esinyibilikisiweyo, ukumelana nokutsha kobushushu kunye neempawu zongcoliseko oluphantsi, nto leyo eyandisa ubomi benkonzo.

Iingenelo zethu zobugcisa:
1. Uzinzo lobushushu obuphezulu kakhulu.
I-3880°C Melting Point: I-Tantalum carbide coating inokusebenza ngokuqhubekayo nangokuzinzileyo ngaphezulu kwama-2500°C, idlula kakhulu iqondo lobushushu lokubola le-1200-1400°C le-silicon carbide (SiC) coatings eqhelekileyo.
Ukumelana noxinzelelo lobushushu: I-coefficient yokwandiswa kobushushu yengubo ifana neye-graphite substrate (6.6×10 -6 /K), kwaye inokumelana nokunyuka ngokukhawuleza kobushushu kunye nemijikelo yokuwa kunye nomahluko wobushushu ongaphezulu kwe-1000°C ukuze kuthintelwe ukuqhekeka okanye ukuwa.
Iimpawu zoomatshini ezinobushushu obuphezulu: Ubunzima bokugquma bufikelela kwi-2000 HK (ubulukhuni beVickers) kwaye i-modulus ye-elastic yi-537 GPa, kwaye isagcina amandla abalaseleyo olwakhiwo kubushushu obuphezulu.

2. Ayimelani nokugqwala kakhulu ukuqinisekisa ubunyulu benkqubo
Ukumelana okugqwesileyo: Inokumelana okugqwesileyo neegesi ezirhabaxa ezifana ne-H₂, i-NH₃, i-SiH₄, i-HCl kunye neentsimbi ezinyibilikisiweyo (umz. i-Si, i-Ga), isusa ngokupheleleyo i-graphite substrate kwindawo esabelayo kwaye ithintela ungcoliseko lwekhabhoni.
Ukufuduka okuphantsi kokungcola: ubunyulu obuphezulu kakhulu, buthintela ngokufanelekileyo ukufuduka kwe-nitrogen, ioksijini kunye nezinye izinto ezingcolileyo ukuya kwi-crystal okanye kwi-epitaxial layer, kunciphisa izinga leziphene zee-microtubes ngaphezulu kwe-50%.

3. Ukuchaneka kwenqanaba le-nano ukuphucula ukuhambelana kwenkqubo
Ukufana kwengubo: ukunyamezelana kobukhulu≤±5%, ukuthamba komphezulu kufikelela kwinqanaba le-nanometer, ukuqinisekisa ukuhambelana okuphezulu kwe-wafer okanye iiparameter zokukhula kwekristale, impazamo yokufana kobushushu<1%.
Ukuchaneka kobukhulu: kuxhasa ukwenziwa ngokwezifiso kokunyamezelana kwe-±0.05mm, ihlengahlengisa kwiiwafers ezi-4-intshi ukuya kwi-12-intshi, kwaye iyahlangabezana neemfuno ze-interfaces zezixhobo ezichanekileyo.

4. Ihlala ixesha elide kwaye ihlala ixesha elide, inciphisa iindleko zizonke
Amandla okubopha: Amandla okubopha phakathi kwengubo kunye ne-graphite substrate yi-≥5 MPa, ayimelani nokukhukuliseka kunye nokuguga, kwaye ubomi benkonzo buyandiswa ngaphezu kwamaxesha ama-3.

Ukuhambelana koomatshini
Ifanelekile kwizixhobo zokukhulisa iikristale eziqhelekileyo ezifana neCVD, MOCVD, ALD, LPE, njl.njl., ezigubungela ukukhula kweekristale zeSiC (indlela yePVT), iGaN epitaxy, ukulungiswa kwe-substrate yeAlN kunye nezinye iimeko.
Sinikezela ngeendidi ngeendidi zeemilo ze-susceptor ezifana ne-flat, concave, convex, njl. Ubukhulu (5-50mm) kunye noyilo lomngxuma wokubeka izinto zinokulungiswa ngokwesakhiwo somngxuma ukuze kufezekiswe ukuhambelana okungenamthungo nezixhobo.

Izicelo eziphambili:
Ukukhula kwekristale yeSiC: Kwindlela yePVT, ugqubuthelo lunokuphucula ukusasazwa kwentsimi yobushushu, lunciphise iziphene zomphetho, kwaye lonyuse indawo yokukhula esebenzayo yekristale ibe ngaphezu kwama-95%.
I-GaN epitaxy: Kwinkqubo ye-MOCVD, impazamo ye-susceptor thermal uniformity yi-<1%, kwaye ukuhambelana kobukhulu beleyara ye-epitaxial kufikelela kwi-±2%.
Ukulungiswa kwe-substrate ye-AlN: Kwi-reaction ye-amination yobushushu obuphezulu (>2000°C), i-TaC coating ingayihlukanisa ngokupheleleyo i-substrate ye-graphite, iphephe ungcoliseko lwe-carbon, kwaye iphucule ubunyulu be-AlN crystal.