I-SiC Coated Barrel Susceptor eyenziwe ngokwezifiso

Umxhasi weebharelilicandelo eliphambili kwiinkqubo zokukhula kwe-semiconductor epitaxial ezifana ne-MOCVD, i-MBE, i-CVD. Isetyenziswa kakhulu ukuthwala ii-wafers kwiindawo zokusabela ezishushu kakhulu kwaye ibonelela ngendawo efanayo nezinzileyo yentsimi yobushushu ukuqinisekisa ukufakwa ngokuchanekileyo kwee-epitaxial layers (ezifana ne-GaN, i-SiC, njl.njl.). Umsebenzi wayo ophambili kukufezekisa ukulingana okuphezulu kobushushu bomphezulu we-wafer ngolawulo oluchanekileyo lwentsimi yobushushu, ngaloo ndlela iqinisekisa ubukhulu, uxinzelelo lwe-doping, kunye nokufana kwesakhiwo sekristale seefilimu ezincinci ze-epitaxial.

Sisebenzisa iteknoloji yethu enelungelo elilodwa lomenzi ukwenzaisixhobo sokususa iibhareliinobunyulu obuphezulu kakhulu, ukufana okuhle kokugquma kunye nobomi benkonzo egqwesileyo, kunye nokumelana okuphezulu kweekhemikhali kunye neempawu zozinzo lobushushu.

I-VET Energy isebenzisa i-graphite ecocekileyo kakhulu ene-CVD-SiC coating ukuphucula uzinzo lweekhemikhali:

1. Izinto zegrafiti ezicocekileyo kakhulu
Ubushushu obuphezulu: Ubushushu obuphezulu begrafiti buphindwe kathathu kunobo besilicon, obunokudlulisa ubushushu ngokukhawuleza ukusuka kumthombo wobushushu ukuya kwi-wafer kwaye bunciphise ixesha lokufudumeza.
Amandla oomatshini: Uxinano lwegrafiti yoxinzelelo oluyi-isostatic ≥ 1.85 g/cm³, ekwaziyo ukumelana namaqondo obushushu aphezulu angaphezu kwe-1200 ℃ ngaphandle kokuguquka.

2. Ukwaleka kwe-CVD SiC
Umaleko we-β-SiC wenziwa phezu komphezulu wegrafiti nge-chemical vapor deposition (CVD), kunye nobumsulwa be-≥ 99.99995%, impazamo efanayo yobukhulu be-coating ingaphantsi kwe-±5%, kwaye uburhabaxa bomphezulu bungaphantsi kwe-Ra0.5um.

3. Ukuphuculwa kokusebenza:
Ukumelana nokugqwala: inokumelana neegesi ezigqwala kakhulu ezifana neCl2, HCl, njl.njl., inokwandisa ubomi be-epitaxy yeGaN ngokuphindwe kathathu kwindawo ye-NH3.
Uzinzo lobushushu: I-coefficient yokwandiswa kobushushu (4.5 × 10-6/℃) ihambelana ne-graphite ukuze kuthintelwe ukuqhekeka kombala okubangelwa kukuguquguquka kobushushu.
Ukuqina kunye nokuxhathisa ukuguguleka: Ukuqina kweVickers kufikelela kwi-28 GPa, okuphindwe kalishumi kune-graphite kwaye kunokunciphisa umngcipheko wokukrweleka kwe-wafer.