I-SiC Coated Barel Susceptor eyenziwe ngokwezifiso

Umbhobho susceptorlicandelo eliphambili kwiinkqubo zokukhula kwe-semiconductor epitaxial ezifana ne-MOCVD, MBE, CVD. Isetyenziswa kakhulu ukuthwala iiwafers kumagumbi okuphendula ubushushu obuphezulu kwaye ibonelele ngemo engqongileyo efanayo kunye nezinzileyo ye-thermal field ukuqinisekisa ukubekwa okuchanekileyo kwee-epitaxial layers (ezifana ne-GaN, SiC, njl.). Umsebenzi wayo ophambili kukufumana ukufana okuphezulu kobushushu bomphezulu we-wafer ngokusebenzisa ulawulo oluchanekileyo lwentsimi ye-thermal, ngaloo ndlela iqinisekisa ubukhulu, ugxininiso lwe-doping, kunye ne-crystal structure efanayo yeefilimu ezincinci ze-epitaxial.

Sisebenzisa iteknoloji yethu enelungelo elilodwa lomenzi wechiza ukwenzaumphanda susceptorngococeko oluphezulu kakhulu, ukufana okuhle kokwambathisa kunye nobomi benkonzo obugqwesileyo, kunye nokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Amandla e-VET asebenzisa igraphite ecocekileyo ene-CVD-SiC coating ukuqinisa uzinzo lwekhemikhali:

1. Izinto ezicocekileyo zegraphite
I-high conductivity ye-thermal: i-thermal conductivity ye-graphite iphindwe kathathu ye-silicon, enokudlulisa ngokukhawuleza ukushisa ukusuka kumthombo wokufudumala ukuya kwi-wafer kunye nokunciphisa ixesha lokufudumala.
Amandla omatshini: Uxinzelelo lwe-Isostatic uxinzelelo lwegraphite ≥ 1.85 g/cm ³, ekwaziyo ukumelana namaqondo obushushu angaphezu kwe-1200 ℃ ngaphandle koguquko.

2. Ukwaleka kwe-CVD SiC
I-β - i-SiC layer yenziwe phezu kwegraphite nge-chemical vapor deposition (CVD), kunye nococeko lwe-≥ 99.99995%, impazamo yokufana kobunzima bokugquma bungaphantsi kwe-± 5%, kunye nobukhulu bomhlaba bungaphantsi kwe-Ra0.5um.

3. Uphuculo lokusebenza:
Ukumelana ne-Corrosion: inokumelana ne-corrosion gases ephezulu njenge-Cl2, i-HCl, njl njl, inokwandisa ubomi be-GaN epitaxy ngamaxesha amathathu kwindawo ye-NH3.
Ukuzinza kwe-Thermal: I-coefficient yokwandiswa kwe-thermal (4.5 × 10-6 / ℃) ihambelana negraphite ukuphepha i-coefficient yokuqhekeka okubangelwa ukuguquguquka kweqondo lokushisa.
Ubunzima kunye nokuNxitywa kwe-Resistance: Ubunzima beVickers bufikelela kwi-28 GPa, ephindwe ka-10 ngaphezu kwegraphite kwaye inokunciphisa umngcipheko we-wafer scratches.