I-VET Energy igxile kwi-R&D kunye nemveliso yeeringi ze-graphite ezigqunywe yi-CVD tantalum carbide (TaC) ezisebenza kakuhle, kwaye izibophelele ekuboneleleni ngezisombululo zezinto ezisetyenziswayo eziphambili kwimizi-mveliso ye-semiconductor, i-photovoltaic kunye ne-high-temperature. Itekhnoloji yethu yokwenziwa kwe-chemical vapor deposition (CVD) ephuhliswe ngokuzimeleyo yenza i-tantalum carbide coating exineneyo nefanayo kumphezulu we-graphite substrate ngeenkqubo ezichanekileyo, iphucula kakhulu ukumelana nobushushu obuphezulu bemveliso (>3000℃), ukumelana nokugqwala kunye nokumelana nokutshayiswa kobushushu, yandisa ubomi benkonzo ngaphezu kwezihlandlo ezi-3, kwaye inciphisa iindleko ezipheleleyo zabathengi.
Iingenelo zethu zobugcisa:
1. Ukumelana ne-oxidation yobushushu obuphezulu
Kwindawo enomoya oyi-1200℃, izinga lokunyuka kobunzima be-oxidation yi-≤0.05mg/cm²/h, elingaphezulu kwezihlandlo ezi-3 zobomi bokumelana ne-oxidation kune-graphite eqhelekileyo, kwaye lifanelekile kwiimeko zomjikelo wokupholisa nokufudumeza oqhelekileyo.
2. Ukumelana nokugqwala kwe-silicon/isinyithi esinyibilikisiweyo
I-TaC coating ayisebenzi kakuhle kwiisinyithi ezifana ne-silicon engamanzi (1600℃), i-aluminium/copper enyibilikisiweyo, njl.njl., ithintela ukusilela kwesakhiwo seeringi zesikhokelo zemveli ngenxa yokungena kwesinyithi, ngakumbi ezifanelekileyo kwii-power semiconductors kunye nemveliso yesizukulwana sesithathu se-semiconductor.
3. Ungcoliseko lwamasuntswana aphantsi kakhulu
Inkqubo ye-CVD ifikelela kubuninzi bokugquma obungaphezulu kwe-99.5% kunye noburhabaxa bomphezulu obuyi-Ra≤0.2μm, nto leyo enciphisa umngcipheko wokuchitheka kwamasuntswana avela kumthombo kwaye ihlangabezana neemfuno zococeko oluqinileyo lwe-wafer manufacturin eyi-12-intshi.
4. Ulawulo lobungakanani oluchanekileyo
Ukwamkela ukucutshungulwa kwe-CNC ngokuchanekileyo, ubukhulu bokunyamezelwa kwe-grafiti substrate yi-±0.01mm, kwaye ukuguquguquka kwayo yonke into emva kokugqunywa yi-<±5μm, efanelekileyo ukufakwa kwiigumbi zezixhobo ezichanekileyo.
| 碳化钽涂层物理特性物理特性 Iimpawu ezibonakalayo ze I-TaC ugqubuthelo | |
| 密度/ Ubuninzi | 14.3 (g/cm³) |
| ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 比辐射率 / Ukukhupha okuthe ngqo | 0.3 |
| 热膨胀系数 / I-coefficient yokwandiswa kobushushu | 6.3 10-6/K |
| 努氏硬度/ Ubunzima (HK) | 2000 HK |
| 电阻 / Ukuchasana | 1 × 10-5 Ohm*cm |
| 热稳定性 / Uzinzo lobushushu | <2500℃ |
| 石墨尺寸变化 / Utshintsho kubungakanani beGraphite | -10~-20um |
| 涂层厚度 / Ubukhulu bokwaleka | ≥30um ixabiso eliqhelekileyo (35um ± 10um) |
I-Ningbo VET Energy Technology Co., Ltd lishishini eliphambili eligxile kuphuhliso kunye nemveliso yezinto eziphambili, izixhobo kunye netekhnoloji equka i-graphite, i-silicon carbide, iiseramikhi, unyango lomphezulu olufana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njl.njl., ezi mveliso zisetyenziswa kakhulu kwi-photovoltaic, i-semiconductor, amandla amatsha, i-metallurgy, njl.njl.
Iqela lethu lobuchwephesha livela kumaziko ophando aphambili asekhaya, kwaye liphuhlise ubuchwepheshe obuninzi obunelungelo lobunikazi ukuqinisekisa ukusebenza kakuhle kwemveliso kunye nomgangatho wayo, linokubonelela abathengi ngezisombululo zezinto zobungcali.
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Iglasi enganyangekiyo yoBushushu ekhatywayo yeCarbon
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I-Tantalum carbide coated susceptor ye-wafer
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Iglasi yeCarbon elungiselelweyo yeLebhu ...
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I-Silicon Carbide Crystal Boat ephinde yasetyenziswa kwakhona ...
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Indandatho yesikhokelo segrafayithi egqunywe yiTaC
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Inxalenye yeGraphite ePhezulu nesezantsi yeSi ...