I-TaC Coated Graphite Ring

TaC Coated Graphite Ring Featured Umfanekiso

Inkcazelo emfutshane:

I-VET Amandla igxile kwi-R&D kunye nokuveliswa kwezangqa zegraphite ezigqunywe yi-TaC. Ukusebenzisa ubuchwepheshe be-CVD obuphambili, ukwenza i-TaC yokwambathisa ubunyulu obuphezulu, ukuxinana okuphezulu kunye nobukhulu obufanayo, inokuthintela ngokufanelekileyo ukungcoliseka kokungcola, inokusebenza ngokuzinzileyo kumaqondo obushushu angaphezulu kwama-2500℃, kwaye inokunyamezelana okumandla kwiindawo ezahlukeneyo zegesi.

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I-VET Energy igxile kwi-R&D kunye nokuveliswa kwe-CVD tantalum carbide (TaC) efakwe amakhonkco egraphite esebenza kakhulu, kwaye izimisele ukubonelela ngezisombululo zezinto ezisetyenziswayo ezingundoqo kwi-semiconductor, i-photovoltaic kunye namashishini aphezulu obushushu. Itekhnoloji yethu ephuhliswe ngokuzimeleyo yekhemikhali yokubeka umphunga (CVD) ibumba itekhnoloji eshinyeneyo nefanayo ye-tantalum carbide kumphezulu we-graphite substrate ngokusebenzisa iinkqubo ezichanekileyo, iphucula kakhulu ukumelana nobushushu obuphezulu bemveliso (> 3000 ℃), ukuxhathisa umhlwa kunye nokumelana nokothuka kwe-thermal, ukwandisa ubomi benkonzo ngamaxesha angaphezu kwe-3, kunye nokunciphisa abathengi iindleko ezibanzi.

Izibonelelo zethu zobugcisa:
1. Ukumelana ne-oxidation yobushushu obuphezulu
Kwi-atmosphere yomoya ye-1200℃, ireyithi yokufumana ubunzima be-oxidation yi-≤0.05mg/cm²/h, engaphezulu kwamaxesha e-3 kubomi bokumelana ne-oxidation yegraphite eqhelekileyo, kwaye ifanele iimeko zomjikelo wokupholisa we-high-frequency.
2. Ukumelana ne-silicon etyhidiweyo / ukubola kwesinyithi
Ukwaleka kwe-TaC kungene kakhulu kwiintsimbi ezifana nesilicon elulwelo (1600℃), ialuminiyam etyhidiweyo/ubhedu, njl.njl., ukunqanda ukusilela kwesakhiwo samakhonkco esikhokelo semveli ngenxa yokungena kwentsimbi, ilungele ngakumbi i-semiconductors yamandla kunye nokuveliswa kwe-semiconductor yesizukulwana sesithathu.
3. Ungcoliseko olusezantsi kakhulu
Inkqubo ye-CVD ifezekisa ubuninzi bokugquma> 99.5% kunye nobunzima bomhlaba we-Ra≤0.2μm, ukunciphisa umngcipheko wokuchithwa kwamasuntswana kumthombo kunye nokuhlangabezana neemfuno ezingqongqo zokucoceka kwe-12-intshi ye-wafer manufacturin.
4. Ulawulo oluchanekileyo lobungakanani
Ukwamkela i-CNC yokuchaneka kwe-machining, ukunyamezela ubungakanani be-graphite substrate yi-± 0.01mm, kwaye i-deformation iyonke emva kokugubungela i-<± 5μm, efanelekile ukufakwa kumagumbi ezixhobo ezichanekileyo.

I-Tantalum carbide I-TaC egqunywe igquma le semiconductor Umfanekiso oMbonisiweyo

碳化钽涂层物理特性物理特性 Iimpawu ezibonakalayo ze I-TaC ukutyabeka
密度/ Ubuninzi	14.3 (g/cm³)
ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 比辐射率 / Ukukhutshwa kwezinto ezithile	0.3
热膨胀系数 / Ukwandiswa kwe-Thermal coefficient	6.3 10^-6/K
努氏硬度/ Ukuqina (HK)	2000 HK
电阻 / Ukuchasa	1×10^-5 Ohm*cm
热稳定性 / Ukuzinza kweThermal	<2500℃
石墨尺寸变化 / Ubungakanani bokutshintsha kwegrafu	-10 ~ -20um
涂层厚度 / Ubukhulu bokugquma	≥30um ixabiso eliqhelekileyo (35um±10um)

I-Ningbo VET Energy Technology Co., Ltd lishishini lobugcisa obuphezulu obujolise kuphuhliso kunye nokuveliswa kwezinto eziphezulu eziphezulu, izixhobo kunye nobuchwepheshe obubandakanya igraphite, i-silicon carbide, i-ceramics, unyango olungaphezulu olufana ne-SiC yokubeka, i-TaC yokubeka, i-glassy caating yekhabhoni, i-pyrolytic carbon coating, njl., ezi mveliso zisetyenziswa ngokubanzi kwi-photovoltaic, i-semiconductor entsha, i-semicondurgy, i-metal.

Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, kwaye liphuhlise iitekhnoloji ezininzi ezinelungelo elilodwa lomenzi wokuqinisekisa ukusebenza kwemveliso kunye nomgangatho, linokubonelela abathengi ngezisombululo zemathiriyeli yobungcali.