Masu ɗaukar wafer na SiC mai rufi da MOCVD, Masu hana Graphite don SiC Epitaxy

Takaitaccen Bayani:

Rufin SiC na substrate na Graphite don aikace-aikacen Semiconductor yana samar da wani ɓangare mai tsarki da juriya ga iskar oxidizing. Ana amfani da CVD SiC ko CVI SiC ga Graphite na sassa masu sauƙi ko masu rikitarwa. Ana iya amfani da murfin a cikin kauri daban-daban da kuma ga manyan sassa.


  • Wurin Asali:Zhejiang, China (Mainland)
  • Lambar Samfura:Lambar Samfura:
  • Sinadarin Sinadari:Graphite mai rufi na SiC
  • Ƙarfin lankwasawa:470Mpa
  • Maido da yanayin zafi:300 W/mK
  • Inganci:Cikakke
  • Aiki:CVD-SiC
  • Aikace-aikace:Semiconductor / Photovoltaic
  • Yawan yawa:3.21 g/cc
  • Faɗaɗawar zafi:4 10-6/K
  • Toka: <5ppm
  • Samfurin:Akwai
  • Lambar HS:6903100000
  • Cikakken Bayani game da Samfurin

    Alamun Samfura

    Masu ɗaukar wafer na SiC mai rufi da MOCVD, Masu hana Graphite donSiC Epitaxy,
    Masu samar da sinadarin carbon, Masu hana graphite epitaxy, Abubuwan tallafi na graphite, Maganin MOCVD, SiC Epitaxy, Masu Rage Wafer,

    Bayanin Samfurin

    Fa'idodi na musamman na susceptors ɗinmu na SiC-coated graphite sun haɗa da tsarki mai yawa, shafi mai kama da juna da kuma kyakkyawan tsawon rai na sabis. Hakanan suna da juriya mai yawa ga sinadarai da kuma yanayin kwanciyar hankali na zafi.

    Rufin SiC na graphite substrate don aikace-aikacen Semiconductor yana samar da wani ɓangare mai tsarki da juriya ga iskar shaka.
    Ana amfani da CVD SiC ko CVI SiC a kan Graphite na sassa masu sauƙi ko masu rikitarwa. Ana iya amfani da shafi a cikin kauri daban-daban da kuma manyan sassa.

    Shafi na SiC/Mai Rufi na MOCVD

    Siffofi:
    · Kyakkyawan Juriyar Girgizar Zafi
    · Kyakkyawan Juriyar Girgiza ta Jiki
    · Kyakkyawan juriya ga sinadarai
    · Tsarkakakken Tsarkakakke
    · Samuwa a Siffa Mai Hadari
    · Ana iya amfani da shi a ƙarƙashin Yanayi Mai Haɗakarwa

    Aikace-aikace:

    2

     

    Al'adar Kayan Graphite na Tushe:

    Yawa Mai Bayyana: 1.85 g/cm3
    Juriyar Lantarki: 11 μΩm
    Ƙarfin Lankwasawa: 49 MPa (500kgf/cm2)
    Taurin bakin teku: 58
    Toka: <5ppm
    Tsarin kwararar zafi: 116 W/mK (100 kcal/mhr-℃)

    Masu samar da sinadarin carbonda kuma sassan graphite don duk na'urorin haɗin gwiwar epitaxy na yanzu. Fayil ɗinmu ya haɗa da na'urorin haɗin gwiwar ganga don na'urorin haɗin gwiwa da na LPE, na'urorin haɗin gwiwar pancake don na'urorin haɗin gwiwa na LPE, CSD, da Gemini, da na'urorin haɗin gwiwa guda ɗaya don na'urorin haɗin gwiwa da ASM. Ta hanyar haɗa haɗin gwiwa mai ƙarfi tare da manyan OEMs, ƙwarewar kayan aiki da ƙwarewar masana'antu, SGL yana ba da mafi kyawun ƙira don aikace-aikacenku.

     


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