Sideyaasha Wafer-ka ee SiC ee dahaadhka ah ee MOCVD, Susceptors-ka Graphite ee loogu talagalaySiC Epitaxy,
Kaarboonka sahayda walxaha keena, Susceptors-ka garaafyada epitaxy, Substrates-ka taageerada garaafka, Sumeeyaha MOCVD, SiC Epitaxy, Sumeeyayaasha Wafer,

Faa'iidooyinka gaarka ah ee susceptors-ka graphite-ka ee SiC-da ku dahaaran waxaa ka mid ah daahirnimo aad u sarreysa, dahaadh isku mid ah iyo cimri adeeg oo aad u wanaagsan. Waxay sidoo kale leeyihiin iska caabin kiimiko oo sare iyo sifooyin xasillooni kuleyl.

Dahaarka SiC ee substrate-ka Graphite ee loogu talagalay codsiyada Semiconductor wuxuu soo saaraa qayb leh daahirnimo sare iyo iska caabin jawiga oksaydhka.
CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite-ka qaybaha naqshadaha fudud ama kuwa adag. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u waaweyn.

Astaamaha:
· Iska caabinta Shoogga Kulaylka oo Aad u Fiican
· Iska caabinta Shoogga Jirka ee aadka u Fiican
· Iska caabinta Kiimikada ee aadka u Fiican
· Nadiifin Sare oo Aad u Sareysa
· Helitaanka qaab adag
· Loo isticmaali karo marka la eego jawiga oksaydhaynta

Codsiga:

Sifooyinka Caadiga ah ee Walxaha Garaafiga Saldhigga ah:

Kaarboonka sahayda walxaha keenaiyo qaybaha garaafiga ee dhammaan fal-galayaasha epitaxy ee hadda jira. Faylalkayagu waxay ka kooban yihiin susceptors-ka foosto ee cutubyada la dabaqay iyo kuwa LPE, susceptors-ka pancake ee cutubyada LPE, CSD, iyo Gemini, iyo susceptors-ka hal-wafer ee cutubyada la dabaqay iyo ASM. Iyada oo la isku darayo iskaashi xooggan oo lala yeesho OEM-yada hormuudka ka ah, khibradda agabka iyo aqoonta wax soo saarka, SGL waxay bixisaa naqshadda ugu habboon ee codsigaaga.