A i-waferkufuneka kudlule kwiinguqu ezintathu ukuze ibe yitshiphu ye-semiconductor yokwenyani: okokuqala, i-ingot ebunjwe ngebhloko iyanqunyulwa ibe zii-wafers; kwinkqubo yesibini, ii-transistors ziqoshwa ngaphambili kwe-wafer kwinkqubo yangaphambili; ekugqibeleni, ukupakisha kwenziwa, oko kukuthi, ngenkqubo yokusika,i-waferiba yitshiphu epheleleyo ye-semiconductor. Kuyabonakala ukuba inkqubo yokupakisha yeyenkqubo yangasemva. Kule nkqubo, i-wafer iya kunqunyulwa ibe ziitshiphusi ezahlukeneyo ze-hexahedron. Le nkqubo yokufumana iitshiphusi ezizimeleyo ibizwa ngokuba yi-"Singulation", kwaye inkqubo yokusarha ibhodi ye-wafer ibe zii-cuboid ezizimeleyo ibizwa ngokuba yi-"wafer cutting (Die Sawing)". Kutshanje, ngokuphuculwa kokuhlanganiswa kwe-semiconductor, ubukhulu beiiwafersiye yancipha ngokuncipha, nto leyo ebangela ubunzima obukhulu kwinkqubo "yokubumba".
Ukuvela kwendlela yokusika ii-wafer
Iinkqubo zangaphambili neze-back-end ziguquke ngokusebenzisana ngeendlela ezahlukeneyo: ukuguquka kweenkqubo ze-back-end kunokumisela ulwakhiwo kunye nendawo yeetships ezincinci ze-hexahedron ezahlulwe kwi-die kwii-wafer, kunye nolwakhiwo kunye nendawo yee-pads (iindlela zoqhagamshelo lombane) kwi-wafer; ngokuchaseneyo, ukuguquka kweenkqubo zangaphambili kutshintshe inkqubo kunye nendlelai-waferukuncitshiswa komqolo kunye "nokuqhekeka" kwinkqubo yokwahlulwa kwempahla. Ke ngoko, inkangeleko ephucukileyo yephakheji iya kuba nefuthe elikhulu kwinkqubo yokwahlulwa kwempahla. Ngaphezu koko, inani, inkqubo kunye nohlobo lokwahlulwa kwempahla nazo ziya kutshintsha ngokufanelekileyo ngokwendlela ebonakala ngayo iphakheji.
Ukubhala iiDayisi
Kwimihla yokuqala, "ukuqhekeza" ngokusebenzisa amandla angaphandle yayiyeyona ndlela yokwahlulahlulai-waferi-hexahedron iyafa. Nangona kunjalo, le ndlela ineengxaki zokuqhekeka okanye ukuqhekeka komphetho wetshiphusi encinci. Ukongeza, ekubeni ii-burrs kumphezulu wesinyithi zingasuswanga ngokupheleleyo, umphezulu osikiweyo nawo urhabaxa kakhulu.
Ukuze kusonjululwe le ngxaki, kwavela indlela yokusika "yokubhala", oko kukuthi, ngaphambi kokuba "kuqhekezwe", umphezulu womphezului-waferinqunyulwa ibe malunga nesiqingatha sobunzulu. Igama elithi “ukubhala”, njengoko lisitsho, libhekisa ekusebenziseni i-impeller ukusarha (ukusika isiqingatha) icala elingaphambili le-wafer kwangaphambili. Kwimihla yokuqala, uninzi lwee-wafers ezingaphantsi kwe-intshi ezi-6 zazisebenzisa le ndlela yokusika “yokusika” kuqala phakathi kweetships zize “ziqhekeze”.
Ukusika iiBlade okanye ukuSawuda iiBlade
Indlela yokusika "Scribing" yakhula kancinci kancinci yaba yindlela yokusika "iBlade dicing" (okanye ukusarha), eyindlela yokusika kusetyenziswa iblade kabini okanye kathathu ngokulandelelana. Indlela yokusika "iBlade" ingenza isiphumo seetships ezincinci ezixobukayo xa "ziqhekeka" emva "kokubhalisa", kwaye inokukhusela iitships ezincinci ngexesha lenkqubo "yokubumba". Ukusika "iBlade" kwahlukile kwindlela yokusika "i-dicing" yangaphambili, oko kukuthi, emva kokusika "iblade", ayikokuqhekeza, kodwa kukusikwa kwakhona ngeblade. Ke ngoko, ikwabizwa ngokuba yindlela "yokubhalisa ngenyathelo".
Ukuze kukhuselwe i-wafer kumonakalo wangaphandle ngexesha lenkqubo yokusika, ifilimu iya kufakwa kwi-wafer kwangaphambili ukuqinisekisa ukuba ikhuselekile "ukuyisusa". Ngexesha lenkqubo "yokugaya umva", ifilimu iya kuncamathiselwa ngaphambili kwe-wafer. Kodwa ngokuchaseneyo, ekusikeni "kwe-blade", ifilimu kufuneka incamathiselwe ngasemva kwe-wafer. Ngexesha le-eutectic die bonding (i-die bonding, ukulungisa iitships ezahlulweyo kwi-PCB okanye kwisakhelo esizinzileyo), ifilimu eqhotyoshelwe ngasemva iya kuwa ngokuzenzekelayo. Ngenxa yokuxinana okukhulu ngexesha lokusika, amanzi e-DI kufuneka atshizwe rhoqo kuzo zonke iindlela. Ukongeza, i-impeller kufuneka incamathiselwe ngamasuntswana edayimani ukuze izilayi zikwazi ukunqunyulwa ngcono. Ngeli xesha, ukusika (ubukhulu be-blade: ububanzi be-groove) kufuneka kufane kwaye akufuneki kudlule ububanzi be-dicing groove.
Kangangexesha elide, ukusarha kube yeyona ndlela yendabuko yokusika esetyenziswa kakhulu. Inzuzo yayo enkulu kukuba inokunqumla inani elikhulu lee-wafers ngexesha elifutshane. Nangona kunjalo, ukuba isantya sokondla sesilayi sinyuswe kakhulu, amathuba okukrazula umphetho we-chiplet aya kwanda. Ke ngoko, inani lokujikeleza kwe-impeller kufuneka lilawulwe malunga namaxesha angama-30,000 ngomzuzu. Kuyabonakala ukuba ubuchwepheshe benkqubo ye-semiconductor buhlala buyimfihlo eqokelelwa kancinci ngexesha elide lokuqokelela kunye novavanyo kunye nempazamo (kwicandelo elilandelayo malunga nokubopha kwe-eutectic, siza kuxoxa ngomxholo malunga nokusika kunye ne-DAF).
Ukusika ngaphambi kokusila (DBG): ulandelelwano lokusika lutshintshe indlela
Xa kusikwa iiblade kwi-wafer enobubanzi obuziisentimitha ezi-8, akukho mfuneko yokukhathazeka malunga nokuqhekeka okanye ukuqhekeka komphetho we-chiplet. Kodwa njengoko ububanzi be-wafer bunyuka bufikelela kwiisentimitha ezingama-21 kwaye ubukhulu buncipha kakhulu, izinto zokuqhekeka kunye nokuqhekeka ziqala ukubonakala kwakhona. Ukuze kuncitshiswe kakhulu impembelelo yomzimba kwi-wafer ngexesha lenkqubo yokusika, indlela ye-DBG "yokusika ngaphambi kokusila" ithatha indawo yolandelelwano lokusika lwendabuko. Ngokungafaniyo nendlela yendabuko "yokusika iiblade" esika rhoqo, i-DBG kuqala yenza ukusika "iblade", ize inciphise kancinci ubukhulu be-wafer ngokuqhubeka nokunciphisa icala elingasemva de i-chip yahlulwe. Kunokuthiwa i-DBG yinguqulelo ephuculweyo yendlela yangaphambili yokusika "iblade". Ngenxa yokuba inokunciphisa impembelelo yokusikwa kwesibini, indlela ye-DBG iye yathandwa ngokukhawuleza "kwiphakheji yenqanaba le-wafer".
Ukunqumla ngeLaser
Inkqubo ye-wafer-level chip scale package (WLCSP) isebenzisa ikakhulu ukusika nge-laser. Ukusika nge-laser kunokunciphisa izinto ezifana nokuxobuka nokuqhekeka, ngaloo ndlela kufumaneke ii-chips ezisemgangathweni ongcono, kodwa xa ubukhulu be-wafer bungaphezulu kwe-100μm, imveliso iya kuncipha kakhulu. Ke ngoko, isetyenziswa kakhulu kwii-wafers ezinobukhulu obungaphantsi kwe-100μm (obuncinci). Ukusika nge-laser kunciphisa i-silicon ngokusebenzisa i-laser enamandla aphezulu kwi-wafer's scribe groove. Nangona kunjalo, xa kusetyenziswa indlela yokusika nge-laser eqhelekileyo (i-Conventional Laser), ifilimu ekhuselayo kufuneka ifakwe kumphezulu we-wafer kwangaphambili. Ngenxa yokuba ukufudumeza okanye ukukhanyisela umphezulu we-wafer nge-laser, ezi zixhobo zomzimba ziya kuvelisa ii-grooves kumphezulu we-wafer, kwaye iziqwenga ze-silicon ezisikiweyo nazo ziya kunamathela kumphezulu. Kuyabonakala ukuba indlela yokusika nge-laser yendabuko ikwanqumla ngqo umphezulu we-wafer, kwaye kule nkalo, ifana nendlela yokusika "i-blade".
I-Stealth Dicing (SD) yindlela yokuqala yokusika ingaphakathi le-wafer ngamandla e-laser, uze ufake uxinzelelo lwangaphandle kwi-tape eqhotyoshelwe ngasemva ukuze uyiqhekeze, ngaloo ndlela yahlula i-chip. Xa uxinzelelo lufakwa kwi-tape engasemva, i-wafer iya kuphakanyiswa ngoko nangoko ngenxa yokwelulwa kwe-tape, ngaloo ndlela yahlula i-chip. Iingenelo ze-SD kunendlela yendabuko yokusika i-laser zezi: okokuqala, akukho nkunkuma ye-silicon; okwesibini, i-kerf (i-Kerf: ububanzi bomngxuma we-scribe) incinci, ngoko ke ii-chips ezininzi zinokufunyanwa. Ukongeza, into yokuxobuka nokuqhekeka iya kuncipha kakhulu kusetyenziswa indlela ye-SD, ebaluleke kakhulu kumgangatho uphela wokusika. Ke ngoko, indlela ye-SD isenokuba yeyona teknoloji idumileyo kwixesha elizayo.
Ukuqhekeza ngePlasma
Ukusika i-plasma bubuchwepheshe obusandula ukuphuhliswa obusebenzisa ukugrumba kwe-plasma ukusika ngexesha lenkqubo yokuvelisa (i-Fab). Ukusika i-plasma kusebenzisa izinto ezisebenzisa i-semi-gas endaweni yezinto ezimanzi, ngoko ke impembelelo kwindalo esingqongileyo incinci. Kwaye indlela yokusika i-wafer yonke ngaxeshanye iyasetyenziswa, ngoko ke isantya "sokusika" sikhawuleza kakhulu. Nangona kunjalo, indlela ye-plasma isebenzisa igesi yokusabela kwamakhemikhali njengezinto eziluhlaza, kwaye inkqubo yokugrumba iyinkimbinkimbi kakhulu, ngoko ke ukuhamba kwayo kwenkqubo kunzima kakhulu. Kodwa xa kuthelekiswa nokusika "i-blade" kunye nokusika nge-laser, ukusika i-plasma akubangeli monakalo kumphezulu we-wafer, ngaloo ndlela kunciphisa izinga lesiphene kunye nokufumana iitships ezingaphezulu.
Kutshanje, ekubeni ubukhulu be-wafer buncitshisiwe ukuya kwi-30μm, kwaye kusetyenziswa izinto ezininzi ze-copper (Cu) okanye izinto ezihlala zisebenza nge-dielectric ephantsi (Low-k). Ke ngoko, ukuze kuthintelwe ii-burrs (Burr), iindlela zokusika i-plasma nazo ziya kuthandwa. Kakade ke, iteknoloji yokusika i-plasma nayo iphuhliswa rhoqo. Ndikholelwa ukuba kungekudala, ngenye imini akuyi kubakho mfuneko yokunxiba imaski ekhethekileyo xa usika, kuba le yindlela ephambili yophuhliso lokusika i-plasma.
Njengoko ubukhulu bee-wafers buncitshisiwe rhoqo ukusuka kwi-100μm ukuya kwi-50μm ukuya kwi-30μm, iindlela zokusika zokufumana ii-chips ezizimeleyo nazo bezitshintsha kwaye ziphuhla ukusuka ekusikeni "kokwaphuka" kunye "neblade" ukuya ekusikeni nge-laser kunye nokusika i-plasma. Nangona iindlela zokusika ezikhula ngokukhawuleza zonyuse iindleko zemveliso yenkqubo yokusika ngokwayo, kwelinye icala, ngokunciphisa kakhulu izinto ezingafunekiyo ezifana nokuxobuka nokuqhekeka okuhlala kwenzeka ekusikeni ii-chips ze-semiconductor kunye nokwandisa inani lee-chips ezifunyenweyo kwi-wafer nganye, iindleko zemveliso ye-chip enye zibonise ukuhla. Kakade ke, ukwanda kwenani lee-chips ezifunyenweyo kwindawo nganye ye-wafer kunxulumene kakhulu nokunciphisa ububanzi besitalato sokusika. Ukusebenzisa ukusika kwe-plasma, phantse ii-chips ezingama-20% zinokufunyanwa xa kuthelekiswa nokusebenzisa indlela yokusika "iblade", nto leyo ekwayisizathu esikhulu sokuba abantu bakhethe ukusika i-plasma. Ngophuhliso kunye notshintsho lwee-wafers, ukubonakala kwee-chip kunye neendlela zokupakisha, iinkqubo ezahlukeneyo zokusika ezifana netekhnoloji yokucubungula ii-wafer kunye ne-DBG nazo ziyavela.
Ixesha leposi: Oktobha-10-2024