Batirin lithium-ion galibi suna tasowa ne a cikin yanayin yawan kuzari mai yawa. A zafin jiki na ɗaki, kayan lantarki masu tushen silicon tare da lithium don samar da samfurin Li3.75Si mai wadataccen lithium, tare da takamaiman ƙarfin har zuwa 3572 mAh/g, wanda ya fi ƙarfin ka'idar electrode mai launin graphite 372 mAh/g. Duk da haka, a lokacin da ake maimaita caji da fitar da kayan lantarki masu tushen silicon, canjin lokaci na Si da Li3.75Si na iya haifar da faɗaɗa girma mai yawa (kimanin 300%), wanda zai haifar da foda na kayan lantarki da ci gaba da samuwar fim ɗin SEI, kuma a ƙarshe yana sa ƙarfin ya ragu da sauri. Masana'antar galibi tana inganta aikin kayan lantarki masu tushen silicon da kwanciyar hankali na batirin silicon ta hanyar girman nano, rufin carbon, samuwar ramuka da sauran fasahohi.
Kayan Carbon suna da kyakkyawan juriya, ƙarancin farashi, da kuma tushe mai faɗi. Suna iya inganta juriya da kwanciyar hankali na kayan da aka yi da silicon. Ana amfani da su azaman ƙarin inganta aiki don electrodes masu guba na silicon. Kayan Silicon-carbon sune babban alkiblar ci gaban electrodes masu guba na silicon. Rufin Carbon na iya inganta kwanciyar hankali na kayan da aka yi da silicon, amma ikonsa na hana faɗaɗa girman silicon gabaɗaya ne kuma ba zai iya magance matsalar faɗaɗa girman silicon ba. Saboda haka, don inganta kwanciyar hankali na kayan da aka yi da silicon, ana buƙatar gina gine-gine masu ramuka. Niƙa ƙwallon hanya ce ta masana'antu don shirya kayan nano. Ana iya ƙara ƙarin abubuwa daban-daban ko abubuwan da aka haɗa zuwa slurry da aka samu ta hanyar niƙa ƙwallon bisa ga buƙatun ƙira na kayan haɗin. Ana rarraba slurry daidai gwargwado ta hanyar slurries daban-daban kuma ana busar da shi ta hanyar feshi. A lokacin busarwa nan take, nanoparticles da sauran abubuwan da ke cikin slurry za su samar da halaye na tsari mai ramuka ba zato ba tsammani. Wannan takarda tana amfani da fasahar niƙa ƙwallon ƙwallo da feshi mai laushi don shirya kayan da aka yi da silicon mai ramuka.
Ana iya inganta aikin kayan da aka yi da silicon ta hanyar daidaita yanayin da kuma halayen rarraba kayan nano na silicon. A halin yanzu, an shirya kayan da aka yi da silicon tare da siffofi daban-daban da halayen rarrabawa, kamar su nanorods na silicon, nanosilicon mai ramuka a cikin ramuka, nanosilicon da aka rarraba a cikin sassan carbon, tsarin ramuka na silicon/graphene array, da sauransu. A wannan sikelin, idan aka kwatanta da nanoparticles, nanosheets na iya danne matsalar niƙawa da faɗaɗa girma ke haifarwa, kuma kayan yana da yawan matsawa mafi girma. Tarin nanosheets mara tsari na iya samar da tsari mai ramuka. Don shiga ƙungiyar musayar lantarki ta silicon mara kyau. Samar da sararin ma'ajiyar bayanai don faɗaɗa girma na kayan silicon. Gabatar da nanotubes na carbon (CNTs) ba wai kawai zai iya inganta yanayin aiki na kayan ba, har ma yana haɓaka samuwar tsarin ramuka na kayan saboda halayensa na siffofi ɗaya. Babu rahotanni kan tsarin ramuka da aka gina ta nanosheets na silicon da CNTs. Wannan takarda ta yi amfani da hanyoyin niƙa ƙwallon da ake amfani da su a masana'antu, niƙa da watsawa, busar da feshi, shafa carbon kafin a shafa da kuma katsewa, kuma ta gabatar da masu haɓaka ramuka a cikin tsarin shiri don shirya kayan lantarki mara kyau na silicon da aka haɗa ta hanyar haɗa kai da zanen silicon da CNTs. Tsarin shiri yana da sauƙi, mara lahani ga muhalli, kuma babu wani ruwa ko sharar da aka samar. Akwai rahotannin wallafe-wallafe da yawa game da shafa carbon na kayan da aka yi da silicon, amma akwai tattaunawa kaɗan game da tasirin shafa. Wannan takarda tana amfani da kwalta a matsayin tushen carbon don bincika tasirin hanyoyin shafa carbon guda biyu, shafa ruwa da kuma shafa mai ƙarfi, akan tasirin shafa da kuma aikin kayan lantarki mara kyau na silicon.
Gwaji 1
1.1 Shirye-shiryen kayan aiki
Shirye-shiryen kayan haɗin silicon-carbon masu ramuka sun haɗa da matakai biyar: niƙa ƙwallon, niƙa da warwatsewa, busar da feshi, shafa carbon kafin a shafa da kuma haɗa carbon. Da farko, a auna gram 500 na foda silicon na farko (tsaftace na cikin gida, 99.99%), a ƙara gram 2000 na isopropanol, sannan a yi niƙa ƙwallon da aka jika a saurin niƙa ƙwallon 2000 r/min na tsawon awanni 24 don samun slurry silicon na nano-scale. Ana canja wurin slurry silicon da aka samu zuwa tankin canja wurin watsawa, kuma ana ƙara kayan bisa ga rabon yawan silicon: graphite (wanda aka samar a Shanghai, matakin baturi): nanotubes na carbon (wanda aka samar a Tianjin, matakin baturi): polyvinyl pyrrolidone (wanda aka samar a Tianjin, matakin nazari) = 40:60:1.5:2. Ana amfani da isopropanol don daidaita abun ciki mai ƙarfi, kuma an tsara abun ciki mai ƙarfi don zama 15%. Ana yin niƙa da watsawa a saurin watsawa na 3500 r/min na tsawon awanni 4. Ana kwatanta wani rukunin slurry ba tare da ƙara CNTs ba, sauran kayan kuma iri ɗaya ne. Daga nan sai a mayar da slurry ɗin da aka watsa zuwa tankin ciyar da feshi, sannan a yi busar da feshi a cikin yanayi mai kariya daga nitrogen, tare da zafin shiga da fita shine 180 da 90 °C, bi da bi. Sannan an kwatanta nau'ikan murfin carbon guda biyu, murfin lokaci mai ƙarfi da kuma murfin lokaci mai ruwa. Hanyar rufe lokaci mai ƙarfi ita ce: ana haɗa foda da aka feshi da foda mai kauri 20% (wanda aka yi a Koriya, D50 shine 5 μm), a haɗa a cikin mahaɗin injiniya na tsawon minti 10, kuma saurin haɗuwa shine 2000 r/min don samun foda da aka riga aka shafa. Hanyar rufe lokaci mai ruwa ita ce: ana ƙara foda da aka feshi da aka feshi a cikin maganin xylene (wanda aka yi a Tianjin, matakin nazari) wanda ke ɗauke da kashi 20% na asfalt da aka narkar a cikin foda a cikin abun ciki mai ƙarfi na 55%, sannan a juya injin daidai gwargwado. A gasa a cikin tanda mai injina a digiri 85 na ℃ na tsawon awanni 4, a saka a cikin injina don haɗawa, saurin haɗuwa shine 2000 r/min, kuma lokacin haɗawa shine mintuna 10 don samun foda da aka riga aka shafa. A ƙarshe, an sanya foda da aka riga aka shafa a cikin murhun juyawa a ƙarƙashin yanayin nitrogen a ƙimar dumama na 5°C/min. Da farko an ajiye shi a zafin jiki na 550°C na tsawon awanni 2, sannan aka ci gaba da dumama shi har zuwa 800°C kuma aka ajiye shi a zafin jiki na tsawon awanni 2, sannan a sanyaya shi ta halitta zuwa ƙasa da 100°C sannan a fitar da shi don samun kayan haɗin silicon-carbon.
1.2 Hanyoyin Halayya
An yi nazarin rarraba girman barbashi na kayan ta amfani da na'urar gwada girman barbashi (sigar Mastersizer 2000, wacce aka yi a Burtaniya). An gwada foda da aka samu a kowane mataki ta hanyar duba na'urar hangen nesa ta lantarki (Regulus8220, wacce aka yi a Japan) don bincika yanayin da girman foda. An yi nazarin tsarin lokaci na kayan ta amfani da na'urar nazarin diffraction na foda X-ray (D8 ADVANCE, wacce aka yi a Jamus), kuma an yi nazarin abun da ke cikin kayan ta amfani da na'urar nazarin kuzari. An yi amfani da kayan haɗin silicon-carbon da aka samu don yin rabin sel na samfurin CR2032, da kuma rabon yawan silicon-carbon: SP: CNT: CMC: SBR shine 92:2:2:1.5:2.5. Na'urar lantarki mai katsewa takardar lithium ce ta ƙarfe, na'urar lantarki mai amfani da lantarki ce ta kasuwanci (samfurin 1901, wanda aka yi a Koriya), ana amfani da diaphragm na Celgard 2320, kewayon ƙarfin wutar lantarki da fitarwa shine 0.005-1.5 V, ƙarfin wutar lantarki da fitarwa shine 0.1 C (1C = 1A), kuma ƙarfin wutar lantarki mai yanke fitarwa shine 0.05 C.
Domin ƙarin bincike kan aikin kayan haɗin silicon-carbon, an yi ƙaramin batirin soft-pack mai laminated 408595. An yi amfani da NCM811 (wanda aka yi a Hunan, matakin baturi), kuma an haɗa electrode mara kyau da kayan silicon-carbon 8%. Tsarin electrode mai kyau shine 96% NCM811, 1.2% polyvinylidene fluoride (PVDF), 2% wakilin conductive SP, 0.8% CNT, kuma ana amfani da NMP azaman mai wartsakewa; tsarin electrode mara kyau shine kayan electrode mara kyau 96%, 1.3% CMC, 1.5% SBR 1.2% CNT, kuma ana amfani da ruwa azaman mai wartsakewa. Bayan juyawa, an shafa, an mirgina, an yanke, an laka, an walda tab, an marufi, an yi allurar ruwa, an samar da ruwa, an shirya batura masu laushi 408595 waɗanda aka lakafta tare da ƙarfin 3 Ah. An gwada aikin ƙimar 0.2C, 0.5C, 1C, 2C da 3C da kuma aikin zagayowar caji na 0.5C da fitarwa na 1C. Matsakaicin ƙarfin wutar lantarki na caji da fitarwa shine 2.8-4.2 V, caji na yau da kullun da caji na wutar lantarki mai ɗorewa, kuma wutar da aka yanke shine 0.5C.
Sakamako 2 da Tattaunawa
An lura da foda silicon na farko ta hanyar duba na'urar daukar hoto ta electron microscopy (SEM). Foda silicon ya kasance mai girman ba bisa ka'ida ba tare da tsari ba tare da girman barbashi wanda bai wuce 2μm ba, kamar yadda aka nuna a Hoto na 1(a). Bayan niƙa ƙwallon, an rage girman foda silicon sosai zuwa kusan 100 nm [Hoto na 1(b)]. Gwajin girman barbashi ya nuna cewa D50 na foda silicon bayan niƙa ƙwallon shine 110 nm kuma D90 shine 175 nm. Binciken da aka yi a hankali game da yanayin foda silicon bayan niƙa ƙwallon yana nuna tsarin da ya fashe (za a ƙara tabbatar da samuwar tsarin da ya fashe daga SEM mai giciye). Saboda haka, bayanan D90 da aka samu daga gwajin girman barbashi ya kamata su zama girman tsayin nanosheet. Idan aka haɗa su da sakamakon SEM, za a iya yanke hukunci cewa girman nanosheet da aka samu ya fi ƙanƙanta fiye da mahimmancin ƙimar 150 nm na fashewar foda silicon yayin caji da fitarwa a aƙalla girma ɗaya. Samuwar siffar da ba ta da ƙarfi ta samo asali ne daga bambancin kuzarin rabuwar ɓangarorin taurarin kristal na silicon, wanda daga cikinsu akwai ƙarfin rabuwar ɓangarorin taurarin kristal na silicon ƙasa da ƙarfin rabuwar ɓangarorin taurarin kristal na 100 da 110. Saboda haka, wannan jirgin kristal yana da sauƙin rage shi ta hanyar niƙa ƙwallon, kuma a ƙarshe yana samar da tsari mai laushi. Tsarin da ba ya da ƙarfi yana taimakawa wajen tara sassauƙan siffofi, yana adana sarari don faɗaɗa ƙarar silicon, kuma yana inganta kwanciyar hankali na kayan.
An fesa slurry ɗin da ke ɗauke da nano-silicon, CNT da graphite, kuma an duba foda ɗin kafin da bayan fesawa ta hanyar SEM. Sakamakon an nuna shi a Hoto na 2. Tsarin graphite da aka ƙara kafin fesawa tsari ne na yau da kullun mai girman 5 zuwa 20 μm [Hoto na 2(a)]. Gwajin rarraba girman barbashi na graphite ya nuna cewa D50 shine 15 μm. Foda da aka samu bayan fesawa yana da siffar zagaye [Hoto na 2(b)], kuma ana iya ganin cewa an rufe graphite da Layer ɗin rufi bayan fesawa. D50 na foda bayan fesawa shine 26.2 μm. An lura da halayen siffar barbashi na biyu ta hanyar SEM, yana nuna halayen tsarin ramuka mai laushi wanda kayan nano suka tara [Hoto na 2(c)]. Tsarin ramukan ya ƙunshi zanen silicon da CNTs waɗanda aka haɗa su da juna [Hoto na 2(d)], kuma yankin saman gwaji na musamman (BET) yana da girman 53.3 m2/g. Saboda haka, bayan fesawa, zanen silicon da CNTs suna haɗuwa da kansu don samar da tsari mai ramuka.
An yi wa Layer mai ramuka da murfin carbon mai ruwa-ruwa, kuma bayan an ƙara matakin farko na murfin carbon da kuma carbonization, an gudanar da lura da SEM. An nuna sakamakon a Hoto na 3. Bayan an gama shafa carbon, saman barbashi na biyu ya zama santsi, tare da wani Layer mai rufi a bayyane, kuma murfin ya cika, kamar yadda aka nuna a Hoto na 3(a) da (b). Bayan carbonization, Layer mai rufi a saman yana kiyaye kyakkyawan yanayin shafi [Hoto na 3(c)]. Bugu da ƙari, hoton SEM mai giciye yana nuna ƙananan barbashi masu siffar tsiri [Hoto na 3(d)], wanda ya dace da halayen siffar nanosheets, yana ƙara tabbatar da samuwar nanosheets na silicon bayan niƙa ƙwallo. Bugu da ƙari, Hoto na 3(d) ya nuna cewa akwai abubuwan cikawa tsakanin wasu nanosheets. Wannan galibi saboda amfani da hanyar rufewa ta lokaci-lokaci na ruwa. Maganin kwalta zai shiga cikin kayan, don saman nanosheets na silicon na ciki ya sami Layer mai kariya daga murfin carbon. Saboda haka, ta hanyar amfani da murfin ruwa, ban da samun tasirin murfin barbashi na biyu, ana iya samun tasirin murfin carbon sau biyu na murfin barbashi na farko. An gwada foda mai carbonized ta hanyar BET, kuma sakamakon gwajin shine 22.3 m2/g.
An yi wa foda mai carbonized nazarin makamashin da aka haɗa (EDS), kuma sakamakon ya nuna a Hoto na 4(a). Babban ma'aunin micron shine ɓangaren C, wanda ya dace da matrix na graphite, kuma murfin waje ya ƙunshi silicon da oxygen. Don ƙarin bincike kan tsarin silicon, an yi gwajin diffraction na X-ray (XRD), kuma an nuna sakamakon a Hoto na 4(b). Kayan ya ƙunshi galibin graphite da silicon guda ɗaya, ba tare da wata siffa ta silicon oxide ba, wanda ke nuna cewa ɓangaren oxygen na gwajin makamashin ya samo asali ne daga iskar shaka ta halitta ta saman silicon. An rubuta kayan haɗin silicon-carbon a matsayin S1.
An yi gwajin samar da sinadarin silicon-carbon S1 da aka shirya a cikin nau'in maɓalli da gwajin fitar da sinadarin caji. An nuna lanƙwasa na farko na fitar da sinadarin caji a cikin Hoto na 5. Ƙarfin da za a iya juyawa shine 1000.8 mAh/g, kuma ingancin zagayowar farko yana da girma har zuwa 93.9%, wanda ya fi inganci na farko na yawancin kayan da aka yi da silicon ba tare da an bayar da rahoton su a cikin wallafe-wallafe ba. Babban ingancin farko yana nuna cewa kayan da aka shirya da silicon-carbon suna da kwanciyar hankali mai yawa. Domin tabbatar da tasirin tsarin ramuka, hanyar sadarwa mai sarrafawa da murfin carbon akan kwanciyar hankalin kayan silicon-carbon, an shirya nau'ikan kayan silicon-carbon guda biyu ba tare da ƙara CNT ba kuma ba tare da rufin carbon na farko ba.
An nuna yanayin foda mai carbonized na kayan haɗin silicon-carbon ba tare da ƙara CNT ba a Hoto na 6. Bayan rufewar lokaci na ruwa da kuma carbonization, ana iya ganin Layer mai rufi a saman ƙananan barbashi na biyu a Hoto na 6(a). An nuna SEM na giciye na kayan da carbonized a Hoto na 6(b). Tarin zanen silicon nanosheets yana da halaye masu rami, kuma gwajin BET shine 16.6 m2/g. Duk da haka, idan aka kwatanta da yanayin da CNT [kamar yadda aka nuna a Hoto na 3(d), gwajin BET na foda mai carbonized shine 22.3 m2/g], yawan tara nano-silicon na ciki ya fi girma, yana nuna cewa ƙara CNT na iya haɓaka samuwar tsarin rami. Bugu da ƙari, kayan ba shi da hanyar sadarwa mai girma uku da CNT ta gina. An rubuta kayan haɗin silicon-carbon a matsayin S2.
An nuna halayen siffar kayan haɗin silicon-carbon da aka shirya ta hanyar murfin carbon mai ƙarfi a cikin Hoto na 7. Bayan carbonization, akwai wani Layer mai rufi a fili a saman, kamar yadda aka nuna a Hoto na 7(a). Hoto na 7(b) ya nuna cewa akwai ƙananan ƙwayoyin cuta masu siffar tsiri a cikin sashin giciye, wanda ya yi daidai da halayen siffar nanosheets. Tarin nanosheets yana samar da tsari mai rami. Babu wani abin cikawa a bayyane a saman nanosheets na ciki, wanda ke nuna cewa murfin carbon mai ƙarfi yana samar da Layer mai rufin carbon kawai tare da tsarin rami, kuma babu Layer mai rufi na ciki don nanosheets na silicon. An rubuta wannan kayan haɗin silicon-carbon a matsayin S3.
An gudanar da gwajin caji da fitarwa na rabin sel na maɓalli a kan S2 da S3. Ƙarfin da ingancin farko na S2 shine 1120.2 mAh/g da 84.8%, bi da bi, kuma ƙarfin da ingancin farko na S3 shine 882.5 mAh/g da 82.9%, bi da bi. Ƙarfin da ingancin farko na samfurin S3 mai rufi mai ƙarfi sune mafi ƙanƙanta, yana nuna cewa an yi murfin carbon na tsarin rami kawai, kuma ba a yi murfin carbon na zanen silicon na ciki ba, wanda ba zai iya ba da cikakken wasa ga takamaiman ƙarfin kayan da aka yi da silicon ba kuma ba zai iya kare saman kayan da aka yi da silicon ba. Ingancin farko na samfurin S2 ba tare da CNT ba shi ma ya fi na kayan haɗin silicon-carbon da ke ɗauke da CNT, yana nuna cewa bisa ga kyakkyawan Layer na rufi, hanyar sadarwa mai sarrafawa da babban matakin tsarin rami suna da amfani ga inganta ingancin caji da fitarwa na kayan silicon-carbon.
An yi amfani da kayan silicon-carbon na S1 don yin ƙaramin batirin da aka cika da laushi don duba aikin ƙimar da aikin zagayowar. An nuna lanƙwasa ƙimar fitarwa a Hoto na 8(a). Ƙarfin fitarwa na 0.2C, 0.5C, 1C, 2C da 3C sune 2.970, 2.999, 2.920, 2.176 da 1.021 Ah, bi da bi. Matsakaicin fitarwa na 1C yana da girma har zuwa 98.3%, amma ƙimar fitarwa na 2C ya ragu zuwa 73.3%, kuma ƙimar fitarwa na 3C ya ragu zuwa 34.4%. Don shiga ƙungiyar musayar lantarki ta silicon, da fatan za a ƙara WeChat: shimobang. Dangane da ƙimar caji, ƙarfin caji na 0.2C, 0.5C, 1C, 2C da 3C shine 3.186, 3.182, 3.081, 2.686 da 2.289 Ah, bi da bi. Yawan caji na 1C shine 96.7%, kuma yawan caji na 2C har yanzu yana kaiwa 84.3%. Duk da haka, lura da lanƙwasa na caji a Hoto na 8(b), dandamalin caji na 2C ya fi girma fiye da dandamalin caji na 1C, kuma ƙarfin caji na wutar lantarki mai ɗorewa yana da mafi yawan (55%), wanda ke nuna cewa rarrabuwar batirin caji na 2C ya riga ya yi girma sosai. Kayan silicon-carbon yana da kyakkyawan aikin caji da fitarwa a 1C, amma halayen tsarin kayan suna buƙatar a ƙara inganta su don cimma babban aiki. Kamar yadda aka nuna a Hoto na 9, bayan zagaye 450, ƙimar riƙe ƙarfin shine 78%, yana nuna kyakkyawan aikin zagaye.
An binciki yanayin saman electrode kafin da kuma bayan zagayowar ta hanyar SEM, kuma an nuna sakamakon a Hoto na 10. Kafin zagayowar, saman graphite da kayan silicon-carbon a bayyane yake [Hoto na 10(a)]; bayan zagayowar, a bayyane yake cewa ana samar da wani Layer na rufi a saman [Hoto na 10(b)], wanda fim ne mai kauri na SEI. Rashin kyawun fim ɗin SEI Yawan amfani da lithium mai aiki yana da yawa, wanda ba ya da amfani ga aikin zagayowar. Saboda haka, haɓaka ƙirƙirar fim ɗin SEI mai santsi (kamar gina fim ɗin SEI na wucin gadi, ƙara ƙarin abubuwan da suka dace na electrolyte, da sauransu) na iya inganta aikin zagayowar. Lura da SEM na sassan giciye na ƙwayoyin silicon-carbon bayan zagayowar [Hoto na 10(c)] ya nuna cewa ainihin ƙwayoyin silicon masu siffar tsiri sun zama masu kauri kuma an kawar da tsarin ramuka. Wannan galibi saboda ci gaba da faɗaɗa girma da matsewar kayan silicon-carbon a lokacin zagayowar. Saboda haka, tsarin ramuka yana buƙatar a ƙara inganta shi don samar da isasshen sararin ajiya don faɗaɗa girma na kayan da aka yi da silicon.
Kammalawa 3
Dangane da faɗaɗa girma, rashin ƙarfin watsawa da rashin kwanciyar hankali na kayan lantarki mara kyau na silicon, wannan takarda tana yin gyare-gyare da aka yi niyya, daga tsarin siffanta na zanen silicon, gina tsarin ramuka, gina hanyar sadarwa mai gudana da cikakken rufin carbon na dukkan ƙwayoyin sakandare, don inganta kwanciyar hankali na kayan lantarki mara kyau na silicon gaba ɗaya. Tarin zanen silicon na iya samar da tsari mai ramuka. Gabatar da CNT zai ƙara haɓaka samuwar tsarin ramuka. Kayan haɗin silicon-carbon da aka shirya ta hanyar murfin lokaci na ruwa yana da tasirin murfin carbon sau biyu fiye da wanda aka shirya ta hanyar murfin lokaci mai ƙarfi, kuma yana nuna babban iko na musamman da inganci na farko. Bugu da ƙari, ingancin farko na kayan haɗin silicon-carbon da ke ɗauke da CNT ya fi na ba tare da CNT ba, wanda galibi saboda babban matakin ƙarfin tsarin ramuka na rage faɗaɗa girma na kayan da aka gina ta hanyar silicon. Gabatar da CNT zai gina hanyar sadarwa mai girma uku, inganta watsawa na kayan da aka gina ta hanyar silicon, kuma ya nuna kyakkyawan aiki a 1C; kuma kayan yana nuna kyakkyawan aikin zagaye. Duk da haka, tsarin kayan yana buƙatar a ƙara ƙarfafa shi don samar da isasshen sarari don faɗaɗa yawan silicon, da kuma haɓaka samuwar santsida kuma fim ɗin SEI mai yawa don ƙara inganta aikin zagayowar kayan haɗin silicon-carbon.
Muna kuma samar da samfuran graphite mai tsarki da silicon carbide, waɗanda ake amfani da su sosai wajen sarrafa wafer kamar oxidation, diffusion, da annealing.
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Lokacin Saƙo: Nuwamba-13-2024