Kauka holoholona-KinaʻO ka seramika Silicon CarbideʻO ka uhi ʻana he uhi pale hana kiʻekiʻe i hana ʻia me ka paʻakikī loa a kūpaʻa i ke komo ʻanasilicon carbide (SiC)mea, e hāʻawi ana i ke kūpaʻa maikaʻi loa i ka palaho kemika a me ke kūpaʻa wela kiʻekiʻe. He mea koʻikoʻi kēia mau ʻano i ka hana semiconductor, no lailaUhi ʻana i ka seramika Silicon Carbidehoʻohana nui ʻia i nā ʻāpana koʻikoʻi o nā lako hana semiconductor.
Ke kuleana kikoʻī o Vet-ChinaʻO ka seramika Silicon CarbidePenei ke ʻano o ka uhi ʻana i ka hana semiconductor:
Hoʻonui i ke kūpaʻa o nā lako:ʻO ka uhi keramika Silicon Carbide Hāʻawi ka uhi keramika Silicon Carbide i ka pale ʻili maikaʻi loa no nā lako hana semiconductor me kona paʻakikī kiʻekiʻe loa a me ke kūpaʻa ʻana i ka ʻaʻahu. ʻOi loa i nā wahi hana wela kiʻekiʻe a me ka corrosive loa, e like me ka hoʻokaʻawale ʻana o ka mahu kemika (CVD) a me ka etching plasma, hiki i ka uhi ke pale pono i ka ʻili o nā lako mai ka hōʻino ʻia e ka erosion kemika a i ʻole ke ʻaʻahu kino, no laila e hoʻolōʻihi nui ai i ke ola lawelawe o nā lako a me ka hōʻemi ʻana i ka downtime i hoʻokumu ʻia e ka hoʻololi pinepine a me ka hoʻoponopono ʻana.
E hoʻomaikaʻi i ka maʻemaʻe o ke kaʻina hana:I ke kaʻina hana semiconductor, hiki i ka haumia liʻiliʻi ke hana i nā hemahema huahana. ʻO ka inertness kemika o Silicon Carbide Ceramic Coating e ʻae iā ia e noho paʻa ma lalo o nā kūlana koʻikoʻi, e pale ana i ka mea mai ka hoʻokuʻu ʻana i nā ʻāpana a i ʻole nā mea haumia, a laila e hōʻoiaʻiʻo ana i ka maʻemaʻe o ke kaiapuni o ke kaʻina hana. He mea nui loa kēia no nā ʻanuʻu hana e pono ai ka pololei kiʻekiʻe a me ka maʻemaʻe kiʻekiʻe, e like me ka PECVD a me ka ion implantation.
Hoʻonui i ka hoʻokele wela:I ka hana semiconductor wela kiʻekiʻe, e like me ka hana wela wikiwiki (RTP) a me nā kaʻina hana oxidation, ʻo ka conductivity wela kiʻekiʻe o Silicon Carbide Ceramic Coating e hiki ai ke hoʻolaha like i ka mahana i loko o nā lako. Kōkua kēia i ka hōʻemi ʻana i ke kaumaha wela a me ka deformation o nā mea i hoʻokumu ʻia e nā loli o ka mahana, a laila e hoʻomaikaʻi ana i ka pololei a me ke kūlike o ka hana ʻana o ka huahana.
Kākoʻo i nā ʻano hana paʻakikī:I nā kaʻina hana e pono ai ka kaohi ʻana i ka lewa paʻakikī, e like me ke kaʻina hana etching ICP a me PSS, ʻo ke kūpaʻa a me ke kū'ē ʻana i ka oxidation o Silicon Carbide Ceramic Coating e hōʻoiaʻiʻo ana e mālama nā lako i ka hana paʻa i ka hana lōʻihi, e hōʻemi ana i ka pilikia o ka hōʻino ʻana o nā mea a i ʻole ka hōʻino ʻana o nā lako ma muli o nā loli o ke kaiapuni.
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCuhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai Maʻamau |
| 晶体结构 / ʻAno Crystal | Pae β FCC多晶,主要为(111)取向 |
| 密度 / Ka nui o ka paʻa | 3.21 g/cm³ |
| 硬度 / Paʻakikī | 2500 维氏硬度(500g load) |
| 晶粒大小 / Ka nui o ka palaoa | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Ka Mana Wela | 640 J·kg-1·K-1 |
| 升华温度 / Mahana Hoʻohaʻahaʻa | 2700℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-kiko |
| 杨氏模量 / Modulus o Young | 430 Gpa 4pt kūlou, 1300 ℃ |
| 导热系数 / ThermalKa hoʻokele ʻana | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Wela (CTE) | 4.5×10-6K-1 |
Ke hoʻokipa maikaʻi nei iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou aku kākou!
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