SiC Coated Barrel Susceptor

Kev Piav Qhia Luv:

VET Zog SiC Coated Barrel Susceptor yog cov khoom ua tau zoo uas tsim los muab kev ua haujlwm zoo thiab txhim khu kev qha rau lub sijhawm ntev. Nws muaj kev tiv taus cua sov zoo heev thiab kev sib xws ntawm thermal, kev ntshiab siab, kev tiv taus kev yaig, ua rau nws yog qhov kev daws teeb meem zoo tshaj plaws rau kev siv wafer.

Qhov chaw keeb kwm:Tuam Tshoj

Cov Qauv Siv Crystal:FCCβ theem

Qhov Ceev:3.21 g/cm3;

Qhov nyuaj:2500 Vickers;

Qhov Loj ntawm Cov Nplej:2 ~ 10μm;

Kev Ntshiab Tshuaj:99.99995%;

Peev Xwm Kub:640J·kg-1·K-1;

Kub Sublimation:2700 ℃;

Lub zog ntawm cov leeg nqaij:415 Mpa (RT 4-Point);

Young's Modulus:430 Gpa (4pt khoov, 1300 ℃);

Kev Nthuav Dav Kub (CTE):4.5 10-6K-1;

Kev Ua Kub:300 (W/MK);

Xa email rau peb Rub tawm ua PDF

Cov Lus Qhia Txog Khoom

Cov Cim Npe Khoom

Tus neeg raug mob ntawm lub thoob is a tus yuam sijkhoom siv hauv ntau yam txheej txheem tsim khoom semiconductor.Peb siv peb cov thev naus laus zis patented los ua kom lub tshuab ua haujlwm tau zoolub thawv susceptornrogkev ntshiab siab heev,zootxheejkev sib xwsthiab lub neej ua haujlwm zoo heev, thiabtshuaj lom neeg ua haujlwm tau zoo thiab thermal stability.

VET Zog yog lubChaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide uas muaj CVD txheej,muaj peev xwm muab khoomntau yamcov khoom siv kho kom haum rau kev lag luam semiconductor thiab photovoltaic. Okoj pab neeg kev tshaj lij los ntawm cov tsev kawm tshawb fawb hauv tsev sab saum toj, tuaj yeem muab cov kev daws teeb meem ntau duarau koj.

Peb pheej tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm ib txoj kev siv tshuab tshwj xeeb uas tau txais patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab lub substrate nruj dua thiab tsis yooj yim tawg.

Fcov yam ntxwv ntawm peb cov khoom:

1. Kev kub siab oxidation tsis kam mus txog 1700℃.
2. Kev huv siab thiabkev sib npaug ntawm thermal
3. Kev tiv thaiv xeb zoo heev: kua qaub, alkali, ntsev thiab cov tshuaj reagents organic.
4. Kev nyuaj siab, qhov chaw me me, cov khoom me me.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能 Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej
性质 / Khoom vaj khoom tsev	典型数值 / Tus nqi ib txwm muaj
晶体结构 / Cov Qauv Siv Crystal	FCC β theem多晶, 主要为(111) Ib
密度 / Qhov Ceev	3.21 g/cm³
硬度 / Qhov nyuaj	2500 维氏硬度 (500g load)
晶粒大小 / Cov nplej loj	2 ~ 10μm
纯度 / Kev Ntshiab Tshuaj	99.99995%
Cov duab / Peev Xwm Kub	640 J·kg^-1·K^-1
升华温度 Kub Sublimation	2700 ℃
抗弯强度 Lub zog flexural	415 MPa RT 4-point
杨氏模量 / Cov Modulus Hluas	430 Gpa 4pt khoov, 1300 ℃
导热系数 / ThermalKev coj ua hluav taws xob	300W·m^-1·K^-1
热膨胀系数 / Kev nthuav dav thermal (CTE)	4.5 × 10^-6K^-1