I-SiC Coated Barrel Susceptor

Umfanekiso oBonisiweyo weSiC Coated Barrel Susceptor

Inkcazo emfutshane:

I-VET Energy SiC Coated Barrel Susceptor yimveliso esebenza kakuhle kakhulu eyenzelwe ukubonelela ngokusebenza okuzinzileyo nokuthembekileyo ixesha elide. Inokumelana okuhle kakhulu nobushushu kunye nokufana kobushushu, ubunyulu obuphezulu, ukumelana nokukhukuliseka, nto leyo eyenza ukuba ibe sisisombululo esifanelekileyo sokusetyenziswa kwe-wafer.

Indawo Yokuqala:iTshayina

Ulwakhiwo lwekristale:Isigaba se-FCCβ

Uxinano:3.21 g/cm;

Ubunzima:IiVickers ezingama-2500;

Ubungakanani bengqolowa:2 ~ 10μm;

Ucoceko lweeKhemikhali:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Ubushushu bokunyibilikisa:2700℃;

Amandla e-Felexural:415 Mpa (RT 4-Point);

IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);

Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;

Ukuqhuba kwe-Thermal:300（W/MK）;

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umxhasi weebhareli is a isitshixoicandelo elisetyenziswa kwiinkqubo ezahlukeneyo zokuvelisa ii-semiconductor.Sisebenzisa iteknoloji yethu enelungelo elilodwa lomenzi ukwenzaisixhobo sokususa iibharelikunyeubunyulu obuphezulu kakhulu,kulungileugqubutheloukufanakunye nobomi benkonzo obugqwesileyo, njengoukumelana okuphezulu kweekhemikhali kunye neempawu zozinzo lobushushu.

I-VET Energy yi iumenzi wokwenyani weemveliso zegrafiti kunye nesilicon carbide ezenziwe ngokwezifiso ezine-CVD coating,ingabonelelaezahlukeneyoiindawo ezenzelwe wena zeshishini le-semiconductor kunye ne-photovoltaic. OIqela lakho lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbiyeyakho.

Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikeze izixhobo eziphucukileyo ngakumbi,kwayebaye basebenza iteknoloji ekhethekileyo enelungelo elilodwa lomenzi wechiza, enokwenza ukubopha phakathi kwengubo kunye ne-substrate kube nzima kwaye kungabi lula ukwahlukana.

Fiindlela zokutya iimveliso zethu:

1. Ukumelana ne-oxidation yobushushu obuphezulu ukuya kuthi ga kwi-1700℃.
2. Ubunyulu obuphezulu kunyeukufana kobushushu
3. Ukumelana nokugqwala okugqwesileyo: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
4. Ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
5. Ubomi benkonzo obude kwaye buhlala ixesha elide

I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lwekristale	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ubukhulu beenkozo	2 ~ 10μm
纯度 / Ucoceko lweekhemikhali	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Ubushushu bokunyibilikisa	2700℃
抗弯强度 / Amandla okugobeka	I-415 MPa RT 4-point
杨氏模量 / Imodulus yoLutsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwandiswa kobushushu (CTE)	4.5×10^-6K^-1