Pūwero Paera Panipani SiC

Whakaahuatanga Poto:

He hua mahi-teitei te VET Energy SiC Coated Barrel Susceptor i hangaia hei whakarato i te mahi pumau me te pono mō te wā roa. He tino pai te ātete ki te wera me te ōritetanga o te wera, he tino parakore, he ātete ki te horo, ā, koinei te otinga tino pai mō ngā tono tukatuka wafer.

 


  • Te Wāhi Taketake:Haina
  • Hanganga karaihe:Wāhanga FCCβ
  • Kiato:3.21 karamu/cm;
  • Te pakeketanga:2500 Vickers;
  • Rahi o te witi:2~10μm;
  • Te Parakore o te Matū:99.99995%;
  • Te kaha wera:640J·kg-1·K-1;
  • Te Pāmahana Whakatōtō:2700℃;
  • Te Kaha o te Felexural:415 Mpa (RT 4-Pōhi);
  • Te Tauwehenga o te Rangatahi:430 GPA (piko 4pt, 1300℃);
  • Te Whakawhanuitanga Wera (CTE):4.5 10-6K-1;
  • Te Arahi Wera:300(W/MK);
  • Taipitopito Hua

    Ngā Tohu Hua

    Pūwero o te oko is a wāhanga e whakamahia ana i roto i ngā tukanga hangahanga semiconductor rerekē.Ka whakamahia e mātou ā mātou hangarau patent hei hanga i tepūwero okometino teitei te parakore,paipaningaōritetangame te ora ratonga tino pai, mengā āhuatanga ātete matū teitei me te pumau wera.

    Ko te Pūngao VET tekaihanga tūturu o ngā hua karāpeti me te karāpeti silicon kua whakaritea me te paninga CVD,ka taea te tukungā momongā wāhanga kua whakaritea mō te umanga semiconductor me te photovoltaic. ONō ngā umanga rangahau ā-rohe nui tō mātou tīma hangarau, ā, ka taea e rātou te whakarato i ngā otinga rauemi ngaio ake.māu.

    Ka whakawhanake tonu mātou i ngā tukanga matatau hei whakarato i ngā rauemi matatau ake,mekua hangaia he hangarau motuhake kua patenttia, hei whakakaha ake i te hononga i waenga i te paninga me te papa, ā, hei whakaiti ake i te ngāwari o te wetewete.

    Fngā āhuatanga o ā mātou hua:

    1. Te ātete ki te waikura pāmahana teitei tae atu ki te 1700.
    2. Te parakore teitei me tete ōritetanga o te wera
    3. Ātete pai ki te waikura: waikawa, kawakore, tote me ngā matū waro.
    4. He pakeke rawa, he mata kiato, he matūriki angiangi.
    5. He roa ake te ora ratonga, he pakari ake

    CVD SiC薄膜基本物理性能

    Ngā āhuatanga ā-tinana taketake o te CVD SiCpaninga

    性质 / Taonga

    典型数值 / Uara Noa

    晶体结构 / Hanganga Karaihe

    Wāhanga β FCC多晶,主要为(111)取向

    密度 / Kiato

    3.21 karamu/cm³

    硬度 / Te pakeketanga

    2500 维氏硬度(500g kawenga)

    晶粒大小 / Rahi o te Witi

    2~10μm

    纯度 / Te Parakore o te Matū

    99.99995%

    热容 / Te kaha wera

    640 J·kg-1·K-1

    升华温度 / Te Pāmahana Whakatōtō

    2700℃

    抗弯强度 / Kaha Whakapiko

    415 MPa RT 4-ira

    杨氏模量 / Te Tauwehenga o te Young

    430 Gpa 4pt piko, 1300℃

    导热系数 / Te whakamahanalTe kawe i te hiko

    300W·m-1·K-1

    热膨胀系数 / Te Whanuitanga Wera (CTE)

    4.5×10-6K-1

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