Icupa rya SiC rikozwe mu mugozi

Ibisobanuro bigufi:

VET Energy SiC Coated Barrel Susceptor ni ibicuruzwa bifite imikorere myiza kandi byizewe byagenewe gutanga imikorere ihoraho kandi yizewe mu gihe kirekire. Bifite ubushobozi bwo kurwanya ubushyuhe n'ubushyuhe bungana, bifite isuku nyinshi, birwanya isuri, bigatuma biba igisubizo cyiza cyo gutunganya wafer.

Aho yaturutse:Ubushinwa

Imiterere ya kristu:Icyiciro cya FCCβ

Ubucucike:3.21 g/cm;

Ubukomere:Vickers 2500;

Ingano y'ibinyampeke:2 ~ 10μm;

Ubuziranenge bw'ibinyabutabire:99.99995%;

Ubushobozi bwo gushyuha:640J·kg-1·K-1;

Ubushyuhe bwo gushyushya:2700°C;

Imbaraga z'imitsi:415 Mpa (RT 4-Point);

Uburyo bwa Young:430 Gpa (4pt bend, 1300℃);

Kwagura Ubushyuhe (CTE):4.5 10-6K-1;

Ubushobozi bwo gutwara ubushyuhe:300（W/MK）;

Ohereza imeri kuri twe Kuramo nka PDF

Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Igikoresho cyo gukurura imbunda is a urufunguzoigice gikoreshwa mu bikorwa bitandukanye byo gukora semiconductor.Dukoresha ikoranabuhanga ryacu rifite patenti kugira ngo dukoreicyuma gifata umuyoborohamwe naubuziranenge bukabije,byizagusigaguhuzan'ubuzima bwiza bwa serivisi, kimwe naUbudahangarwa bwinshi bw'ibinyabutabire n'ubushobozi bwo kudahindagurika mu bushyuhe.

VET Energy ni iuruganda nyarwo rukora ibikoresho bya graphite na silicon carbide byihariye hamwe n'imvange ya CVD,ishobora gutangabitandukanyeibice byihariye byo mu nganda za semiconductor na photovoltaic. OItsinda ryanyu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora gutanga ibisubizo by’ibikoresho by’umwuga.kuri wowe.

Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho,nabakoze ikoranabuhanga ryihariye rifite patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ntigishobora gutandukana cyane.

FImirire y'ibicuruzwa byacu:

1. Ubudahangarwa bw'ubushyuhe bwinshi kugeza kuri dogere 1700℃.
2. Ubuziranenge bwinshi kandiubushyuhe bungana
3. Irwanya ingese neza cyane: aside, alkali, umunyu n'ibikomoka ku bimera.
4. Ubukomere bwinshi, ubuso buto, uduce duto.
5. Igihe kirekire cyo gukora kandi kiramba kurushaho

CVD SiC薄膜基本物理性能 Imiterere y'ibanze ya CVD SiCgusiga
性质 / Umutungo	典型数值 / Agaciro Gasanzwe
晶体结构 / Imiterere ya kristu	Icyiciro cya FCC β多晶，主要为（111 ）取向
密度 / Ubucucike	3.21 g/cm³
硬度 / Ubukomere	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ubunini bw'ibinyampeke	2 ~ 10μm
纯度 / Ubuziranenge bw'ibinyabutabire	99.99995%
热容 / Ubushobozi bwo gushyuha	640 J·kg^-1·K^-1
升华温度 / Ubushyuhe bwo gushyuha	2700℃
抗弯强度 / Imbaraga zo Kongera Uburemere	415 MPa RT ifite amanota 4
杨氏模量 / Modulus y'Abana	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUbushobozi bwo kuyobora	300W·m^-1·K^-1
热膨胀系数 / Kwagura ubushyuhe (CTE)	4.5×10^-6K^-1