ICP Etch Carrier

Short Description:

Place of Origin: China

Crystal Structure: FCCβ phase

Density: 3.21 g/cm;

Hardness : 2500 Vickers;

Grain Size : 2~10μm;

Chemical Purity : 99.99995%;

Heat Capacity: 640J·kg-1·K-1;

Sublimation Temperature : 2700℃;

Felexural Strength : 415 Mpa (RT 4-Point);

Young' s Modulus: 430 Gpa (4pt bend, 1300℃);

Thermal Expansion (C.T.E): 4.5 10-6K-1;

Thermal Conductivity: 300（W/MK）;

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Product Description

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

Main features:

1. High temperature oxidation resistance:

the oxidation resistance is still very good when the temperature is as high as 1600 C.

2. High purity : made by chemical vapor deposition under high temperature chlorination condition.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, salt and organic reagents.

Main Specifications of CVD-SIC Coating

SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young' s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300