Ugqirha wezilwanyana-eTshayinaI-Silicon Carbide CeramicI-Coating yi-coating ekhuselayo esebenza kakhulu eyenziwe ngokuqina kakhulu kwaye ayigugii-silicon carbide (i-SiC)izinto, ezibonelela ngokumelana nokugqwala kweekhemikhali okugqwesileyo kunye nokuzinza kumaqondo obushushu aphezulu. Ezi mpawu zibalulekile kwimveliso ye-semiconductor, ngoko keUkwaleka kweCeramic yeSilicon Carbideisetyenziswa kakhulu kwiindawo eziphambili zezixhobo zokwenza i-semiconductor.
Indima ethile yeVet-ChinaI-Silicon Carbide CeramicUkwaleka kwimveliso ye-semiconductor kulandelayo:
Ukuphucula ukuqina kwezixhobo:I-Silicon Carbide Ceramic Coating I-Silicon Carbide Ceramic Coating ibonelela ngokhuseleko olugqwesileyo kumphezulu wezixhobo zokwenza i-semiconductor ngobunzima bayo obuphezulu kakhulu kunye nokumelana nokuguguleka. Ingakumbi kwiindawo zenkqubo ezinobushushu obuphezulu kunye neemeko ezirhabaxa kakhulu, ezifana ne-chemical vapor deposition (CVD) kunye ne-plasma etching, i-coating inokuthintela ngempumelelo umphezulu wezixhobo ekubeni wonakaliswe kukuguguleka kweekhemikhali okanye ukuguguleka komzimba, ngaloo ndlela yandisa kakhulu ubomi benkonzo yezixhobo kwaye inciphise ixesha lokungasebenzi elibangelwa kukutshintshwa nokulungiswa rhoqo.
Phucula ubunyulu benkqubo:Kwinkqubo yokwenziwa kwe-semiconductor, ungcoliseko oluncinci lunokubangela iziphene kwimveliso. Ukungangeni kweekhemikhali kweSilicon Carbide Ceramic Coating kuyivumela ukuba ihlale izinzile phantsi kweemeko ezinzima, ithintela izinto ukuba zingakhuphi amasuntswana okanye ukungcola, ngaloo ndlela iqinisekisa ubunyulu benkqubo. Oku kubaluleke kakhulu kumanyathelo okwenziwa afuna ukuchaneka okuphezulu kunye nococeko oluphezulu, njenge-PECVD kunye nokufakelwa kwe-ion.
Lungiselela ulawulo lobushushu:Kwinkqubo ye-semiconductor yobushushu obuphezulu, efana ne-fast thermal processing (RTP) kunye neenkqubo ze-oxidation, i-high thermal conductivity ye-Silicon Carbide Ceramic Coating ivumela ukusasazwa kobushushu obufanayo ngaphakathi kwezixhobo. Oku kunceda ukunciphisa uxinzelelo lobushushu kunye nokuguqulwa kwezinto okubangelwa kukuguquguquka kobushushu, ngaloo ndlela kuphucula ukuchaneka kunye nokuhambelana kokwenziwa kwemveliso.
Xhasa iimeko zenkqubo ezintsonkothileyo:Kwiinkqubo ezifuna ulawulo oluntsonkothileyo lomoya, ezifana nokugrumba kwe-ICP kunye neenkqubo zokugrumba ze-PSS, ukuzinza kunye nokumelana nokuxinana kwe-Silicon Carbide Ceramic Coating kuqinisekisa ukuba izixhobo zigcina ukusebenza okuzinzileyo ekusebenzeni ixesha elide, kunciphisa umngcipheko wokonakala kwezinto okanye umonakalo wezixhobo ngenxa yotshintsho lokusingqongileyo.
| I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 晶体结构 / Ulwakhiwo lwekristale | Isigaba se-FCC β多晶,主要為(111)取向 |
| 密度 / Ubuninzi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Ubukhulu beenkozo | 2 ~ 10μm |
| 纯度 / Ucoceko lweekhemikhali | 99.99995% |
| 热容 / Umthamo wobushushu | 640 J·kg-1·K-1 |
| 升华温度 / Ubushushu bokunyibilikisa | 2700℃ |
| 抗弯强度 / Amandla okugobeka | I-415 MPa RT 4-point |
| 杨氏模量 / Imodulus yoLutsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwandiswa kobushushu (CTE) | 4.5×10-6K-1 |
Wamkelekile ngobubele ukuba undwendwele umzi-mveliso wethu, makhe sixoxe ngakumbi!
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