ICP Etch Carrier

Takaitaccen Bayani:

Wurin Asalin:China

Tsarin Crystal:Farashin FCCβ

Yawan yawa:3.21 g / cm;

Tauri:2500 Vickers;

Girman hatsi:2 ~ 10 μm;

Tsaftar Sinadari:99.99995%;

Ƙarfin zafi:640J·kg-1·K-1;

Zazzabi Sublimation:2700 ℃;

Ƙarfin Felexural:415 Mpa (RT 4-Point);

Modul na Young:430 Gpa (4pt lankwasa, 1300 ℃);

Ƙarfafa Ƙarfafawa (CTE):4.5 10-6K-1;

Ƙarfafa Ƙarfafawa:300 (W/MK);

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Cikakken Bayani

Tags samfurin

Bayanin Samfura

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun manyan ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, suna samar da SIC m Layer.

Babban fasali:

1. High zafin jiki oxidation juriya:

juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.

2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.

3. Juriya juriya: babban taurin, m surface, lafiya barbashi.

4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal	FCC β lokaci
Yawan yawa	g/cm ³	3.21
Tauri	Vickers taurin	2500
Girman hatsi	μm	2 ~ 10
Tsaftar Sinadari	%	99.99995
Ƙarfin zafi	J·k-1 · K-1	640
Zazzabi Sublimation	℃	2700
Ƙarfin Felexural	MPa (RT 4-maki)	415
Modul na Young	Gpa (4pt lankwasa, 1300 ℃)	430
Fadada thermal (CTE)	10-6K-1	4.5
Ƙarfafawar thermal	(W/mK)	300