Mutakuri weICP Etch

Mufananidzo Unoratidzwa weICP Etch Carrier

Tsananguro pfupi:

Nzvimbo Yekwakabva:China

Maumbirwo eKristaro:Chikamu cheFCCβ

Kuwanda:3.21 g/cm;

Kuoma:2500 Vickers;

Saizi yeZviyo:2~10μm;

Kuchena Kwemakemikari:99.99995%;

Kugona Kupisa:640J·kg-1·K-1;

Kupisa kweSublimation:2700℃;

Simba reFeleksiyumu:415 Mpa (RT 4-Point);

Modulus yeYoung:430 Gpa (4pt yakakombama, 1300℃);

Kuwedzera kweThermal (CTE):4.5 10-6K-1;

Kufambisa kwekupisa:300（W/MK）;

Tumira email kwatiri Dhaunirodha sePDF

Ruzivo rweChigadzirwa

Matagi eChigadzirwa

Tsananguro yeChigadzirwa

Kambani yedu inopa masevhisi ekugadzira SiC coating process neCVD method pamusoro pegraphite, ceramics nezvimwe zvinhu, kuitira kuti magasi akakosha ane kabhoni nesilicon aite pakupisa kwakanyanya kuti awane mamorekuru eSiC akachena, mamorekuru akaiswa pamusoro pezvinhu zvakaputirwa, zvichigadzira SIC protective layer.

Zvinhu zvikuru:

1. Kudzivirira kupisa kwakanyanya kwe oxidation:

Kusakwanisa kuoxidation kuchiri kwakanaka zvikuru kana tembiricha yakakwira kusvika 1600 C.

2. Kuchena kwakanyanya: kunogadzirwa nekuiswa kwemvura inodziya nemakemikari pasi pemamiriro ekupisa kwakanyanya.

3. Kuramba kukurwa kwevhu: kuomarara kwakanyanya, pamusoro pakaoma, zvidimbu zvitete.

4. Kuramba ngura: acid, alkali, munyu uye organic reagents.

Magadzirirwo Makuru eCVD-SIC Coating

Zvivakwa zveSiC-CVD
Chimiro cheKristaro	Chikamu cheFCC β
Kuwanda kwevanhu	g/cm³	3.21
Kuoma	Kuomarara kweVickers	2500
Saizi yeZviyo	μm	2~10
Kuchena kwemakemikari	%	99.99995
Kugona Kupisa	J·kg-1 ·K-1	640
Kupisa kweSublimation	℃	2700
Simba reFeleksiyumu	MPa (RT 4-point)	415
Modulus yeVadiki	Gpa (4pt yakakombama, 1300℃)	430
Kuwedzera kweThermal (CTE)	10-6K-1	4.5
Kufambisa kwekupisa	(W/mK)	300