ICP Etch Carrier

Fa'amatalaga Puupuu:

Nofoaga na afua mai ai:Saina

Fauga tioata:FCCβ vaega

Malosi:3.21 g/cm;

Malosi:2500 Vickers;

Tele o Saito:2~10μm;

Vailaau mama:99.99995%;

Malosiaga vevela:640J·kg-1·K-1;

Sulimation vevela:2700 ℃;

Malosi Felexural:415 Mpa (RT 4-Point);

Young's Modulus:430 Gpa (4pt pi'o, 1300 ℃);

Fa'alauteleina o le vevela (CTE):4.5 10-6K-1;

Amioga vevela:300（W/MK）;

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Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga o oloa

O loʻo tuʻuina atu e la matou kamupani le SiC coating process services e ala i le CVD method i luga o le graphite, ceramics ma isi mea, ina ia mafai ai e gas faʻapitoa o loʻo i ai carbon ma silicon ona tali atu i le maualuga o le vevela e maua ai le mama maualuga SiC mole, molelaʻau teuina i luga o le pito i luga o mea faʻapipiʻi, fausia ai le SIC puipuiga.

Vaega autu:

1. maualuga le vevela oxidation tetee:

o loʻo lelei tele le faʻamaʻiina o le faʻamaʻi pe a maualuga le vevela ile 1600 C.

2. maualuga mama: faia e vailaau ausa tuu i lalo o le maualuga vevela tulaga chlorination.

3. Erosion tete'e: maualuga ma'a'a, fa'apipi'i luga, vaega laiti.

4. Tete'e a'a: acid, alkali, masima ma organic reagents.

Fa'amatalaga autu o le CVD-SIC Coating

SiC-CVD Meatotino
Fauga tioata	FCC β vaega
Malosi	g/cm ³	3.21
Malosi	Vickers maaa	2500
Tele o Saito	μm	2~10
Vailaau Mama	%	99.99995
Malosiaga vevela	J·kg-1 ·K-1	640
Sulimation Temperature	℃	2700
Malosi Felexural	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt pi'o, 1300 ℃)	430
Fa'alauteleina o le vevela (CTE)	10-6K-1	4.5
Fa'avevela vevela	(W/mK)	300