Umthwali we-ICP Etch

Umfanekiso oPhambili we-ICP Etch Carrier

Inkcazo emfutshane:

Indawo Yokuqala:iTshayina

Ulwakhiwo lwekristale:Isigaba se-FCCβ

Uxinano:3.21 g/cm;

Ubunzima:IiVickers ezingama-2500;

Ubungakanani bengqolowa:2 ~ 10μm;

Ucoceko lweeKhemikhali:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Ubushushu bokunyibilikisa:2700℃;

Amandla e-Felexural:415 Mpa (RT 4-Point);

IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);

Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;

Ukuqhuba kwe-Thermal:300（W/MK）;

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabele kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko wokukhusela we-SIC.

Iimpawu eziphambili:

1. Ukumelana ne-oxidation yobushushu obuphezulu:

Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.

2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

Iinkcukacha eziphambili zeCVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lwekristale	Isigaba se-FCC β
Uxinano	g/cm³	3.21
Ukuqina	Ubulukhuni bukaVickers	2500
Ubungakanani bengqolowa	μm	2~10
Ucoceko lweeKhemikhali	%	99.99995
Umthamo wobushushu	J·kg-1 ·K-1	640
Ubushushu bokunyibilikisa	℃	2700
Amandla eFeleksiyuramu	I-MPa (RT-point 4)	415
IModulus yoLutsha	I-Gpa (i-4pt bend, 1300℃)	430
Ukwandiswa kobushushu (i-CTE)	10-6K-1	4.5
Ukuqhuba kobushushu	(W/mK)	300