ICP Etch Carrier

Sharaxaad Gaaban:


  • Meesha Asal ahaan:Shiinaha
  • Qaab dhismeedka Crystal:wajiga FCCβ
  • Cufnaanta:3.21 g/cm;
  • Adag:2500 Vickers;
  • Cabirka Hadhuudhka:2 ~ 10μm;
  • Nadiifadda Kiimikada:99.99995%;
  • Awoodda kulaylka:640J · kg-1·K-1;
  • Heerkulka Sublimation:2700 ℃;
  • Xoogga Felexural:415 Mpa (RT 4-dhibcood);
  • Modulka dhalinyarada:430 Gpa (4pt laab, 1300 ℃);
  • Balaadhinta kulaylka (CTE):4.5 10-6K-1;
  • Habdhaqanka Kulaylka:300 (W/MK);
  • Faahfaahinta Alaabta

    Tags Product

    Sharaxaada Alaabta

    Shirkaddayadu waxay bixisaa adeegyada habka daahan SiC by habka CVD on dusha graphite, ceramics iyo alaabta kale, si gaas gaar ah oo ay ku jiraan kaarboon iyo Silicon falgal heerkulka sare si ay u helaan daahirsanaan sare SiC molecules, molecules kaydin dusha alaabta dahaarka ah, samaynta lakabka ilaalinta SIC.

    Tilmaamaha ugu muhiimsan:

    1. Iska caabbinta oksaydhka heerkulka sare:

    caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku uu gaadho 1600 C.

    2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalad koloriineed heerkul sare ah.

    3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.

    4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.

    Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

    Guryaha SiC-CVD

    Dhismaha Crystal FCC β wejiga
    Cufnaanta g/cm³ 3.21
    Adag Vickers adag 2500
    Cabirka Hadhuudhka μm 2 ~ 10
    Nadiifnimada Kiimikada % 99.99995
    Awoodda kulaylka J·k-1 ·K-1 640
    Heerkulka Sublimation 2700
    Xoogga Felexural MPa (RT 4-dhibcood) 415
    Dhallinta Modul Gpa (4pt laab, 1300 ℃) 430
    Balaadhinta kulaylka (CTE) 10-6K-1 4.5
    Dhaqdhaqaaqa kulaylka (W/mK) 300

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